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US5604360A
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Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1994-05-24
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Granted: 1997-02-18
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Expires: 2014-05-24
Abstract
Abstract Nickel is introduced to a predetermined region of a peripheral circuit section, other than a picture element section, on an amorphous silicon film to crystallize from that region. After forming gate electrodes and others, sources, drains and channels are formed by doping impurities, and laser is irradiated to improve the crystallization. After that, electrodes/wires are formed. Thereby an active matrix type liquid crystal display whose thin film transistors (TFT) in the peripheral circuit section are composed of the crystalline silicon film whose crystal is grown in the direction parallel to the flow of carriers and whose TFTs in the picture element section are composed of the amorphous silicon film can be obtained.
Inventors
- 👤 Hongyong Zhang
- 👤 Toru Takayama
- 👤 Yasuhiko Takemura
- 👤 Akiharu Miyanaga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:13
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3816; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; H10D86/40; H10D86/60; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3806; H10P14/381; G; G09; G09G; G09G2300/00; G09G2300/04; G09G2300/0404; G09G2300/0408
Claims Analysis
Total Claims: 38
Claim 1
Independent Claim
65 words
A semiconductor device, comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein a first part of the plurality of thin film transistors has a crystalline silicon film including crystals having a crystal growth direction approximately in parallel to a surface of the substrate and a second part of the plurality of thin film transistors has an amorphous silicon film.
Claim 2
Dependent Claim
65 words
A semiconductor device, comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein a first part of the plurality of thin film transistors has a crystalline silicon film including crystals having a crystal growth direction approximately in parallel to a surface of the substrate and a second part of the plurality of thin film transistors has an amorphous silicon film.
Claim 3
Dependent Claim
60 words
A semiconductor device according to claim 1 wherein each of the thin film transistors formed on the substrate includes a source region, a channel region, and a drain region and wherein said crystalline silicon film extends through at least the channel region of each of said thin film transistors of said first part of the plurality of thin film transistors.
Claim 4
Dependent Claim
115 words
A semiconductor device, comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein a first part of the plurality of thin film transistors is provided as a peripheral circuit section of an active matrix type liquid crystal display and a second part of the plurality of thin film transistors is provided as a picture element section of the active matrix type liquid crystal display, and the thin film transistors provided as the peripheral circuit section have a crystalline silicon film including crystals having a crystal growth direction parallel to a surface of the substrate and the thin film transistors provided as the picture element section have an amorphous silicon film.
Claim 5
Dependent Claim
115 words
A semiconductor device, comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein a first part of the plurality of thin film transistors is provided as a peripheral circuit section of an active matrix type liquid crystal display and a second part of the plurality of thin film transistors is provided as a picture element section of the active matrix type liquid crystal display, and the thin film transistors provided as the peripheral circuit section have a crystalline silicon film including crystals having a crystal growth direction parallel to a surface of the substrate and the thin film transistors provided as the picture element section have an amorphous silicon film.
Claim 6
Dependent Claim
60 words
A semiconductor device according to claim 3 wherein each of the thin film transistors formed on the substrate includes a source region, a channel region, and a drain region and wherein said crystalline silicon film extends through at least the channel region of each of said thin film transistors of said first part of the plurality of thin film transistors.
Claim 7
Dependent Claim
101 words
An active matrix type liquid crystal display, comprising: a picture element section having a plurality of thin film transistors respectively associated with a plurality of picture element electrodes and driving circuit means including a plurality of thin film transistors for driving the thin film transistors of the picture element section, wherein the thin film transistors of the driving circuit means each has a substrate and has a crystalline silicon film including crystals having a crystal growth direction approximately parallel to the surface of the substrate and the thin film transistors of the picture element section each has an amorphous silicon film.
Claim 8
Dependent Claim
101 words
An active matrix type liquid crystal display, comprising: a picture element section having a plurality of thin film transistors respectively associated with a plurality of picture element electrodes and driving circuit means including a plurality of thin film transistors for driving the thin film transistors of the picture element section, wherein the thin film transistors of the driving circuit means each has a substrate and has a crystalline silicon film including crystals having a crystal growth direction approximately parallel to the surface of the substrate and the thin film transistors of the picture element section each has an amorphous silicon film.
Claim 9
Dependent Claim
47 words
An active matrix type liquid crystal display according to claim 5 wherein each of the thin film transistors of the driving circuit means includes a source region, a channel region, and a drain region and wherein said crystalline silicon film extends through at least said channel region.
Claim 10
Dependent Claim
68 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has an amorphous silicon film, and wherein the crystalline silicon film includes a metal element.
Claim 11
Dependent Claim
68 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has an amorphous silicon film, and wherein the crystalline silicon film includes a metal element.
Claim 12
Dependent Claim
18 words
The device of claim 7 wherein the metal element includes one of Ni, Fe, Co, Pd and Pt.
Claim 13
Dependent Claim
97 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has an amorphous silicon film, and wherein the crystalline silicon film and the amorphous silicon film each includes a metal element and a concentration of the metal element included in the crystalline silicon film is higher than that included in the amorphous silicon film.
Claim 14
Dependent Claim
97 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has an amorphous silicon film, and wherein the crystalline silicon film and the amorphous silicon film each includes a metal element and a concentration of the metal element included in the crystalline silicon film is higher than that included in the amorphous silicon film.
Claim 15
Dependent Claim
18 words
The device of claim 9 wherein the metal element includes one of Ni, Fe, Co, Pd and Pt.
Claim 16
Dependent Claim
81 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has an amorphous silicon film, and wherein the crystalline silicon film include a metal element and has a concentrations of 1×10 15 to 5×10 19 atoms/cm 3 .
Claim 17
Dependent Claim
81 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has an amorphous silicon film, and wherein the crystalline silicon film include a metal element and has a concentrations of 1×10 15 to 5×10 19 atoms/cm 3 .
Claim 18
Dependent Claim
18 words
The device of claim 11 wherein the metal element includes one of Ni, Fe, Co, Pd and Pt.
Claim 19
Dependent Claim
117 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has an amorphous silicon film, and wherein the crystalline silicon film and the amorphous silicon film each includes a metal element, a concentration of the metal element included in the crystalline silicon film is higher than that included in the amorphous silicon film, and the concentration of the metal element included in crystalline silicon film is 1×10 15 to 5×10 19 atoms/cm 3 .
Claim 20
Dependent Claim
117 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has an amorphous silicon film, and wherein the crystalline silicon film and the amorphous silicon film each includes a metal element, a concentration of the metal element included in the crystalline silicon film is higher than that included in the amorphous silicon film, and the concentration of the metal element included in crystalline silicon film is 1×10 15 to 5×10 19 atoms/cm 3 .
Claim 21
Dependent Claim
18 words
The device of claim 13 wherein the metal element includes one of Ni, Fe, Co, Pd and Pt.
Claim 22
Dependent Claim
68 words
A semiconductor device comprising: a substrate having a glass strain point of 593° C. or less; and a plurality of thin film transistors formed on the substrate, wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has an amorphous silicon film.
Claim 23
Dependent Claim
68 words
A semiconductor device comprising: a substrate having a glass strain point of 593° C. or less; and a plurality of thin film transistors formed on the substrate, wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has an amorphous silicon film.
Claim 24
Dependent Claim
11 words
The device of claim 15 wherein the substrate includes Corning 7059.
Claim 25
Dependent Claim
60 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction which coincides with a carrier moving direction and at least another one of the thin film transistors has an amorphous silicon film.
Claim 26
Dependent Claim
60 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction which coincides with a carrier moving direction and at least another one of the thin film transistors has an amorphous silicon film.
Claim 27
Dependent Claim
118 words
A semiconductor device for an active matrix type liquid crystal display having an peripheral driving circuit portion and a picture element portion, comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein at least one of the thin film transistors is provided in the peripheral driving circuit portion and at least another one of the thin film transistors is provided in the picture element portion, and wherein the thin film transistor provided in the peripheral driving circuit portion has a crystalline silicon film including crystals having a crystal growth direction which coincides with a carrier moving direction and the thin film transistors provided in the picture element portion has an amorphous silicon film.
Claim 28
Dependent Claim
118 words
A semiconductor device for an active matrix type liquid crystal display having an peripheral driving circuit portion and a picture element portion, comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein at least one of the thin film transistors is provided in the peripheral driving circuit portion and at least another one of the thin film transistors is provided in the picture element portion, and wherein the thin film transistor provided in the peripheral driving circuit portion has a crystalline silicon film including crystals having a crystal growth direction which coincides with a carrier moving direction and the thin film transistors provided in the picture element portion has an amorphous silicon film.
Claim 29
Dependent Claim
71 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein at least one of the thin film transistors has a semiconductor film which has a first crystallinity and includes crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has a semiconductor film having a second crystallinity lower than the first crystallinity.
Claim 30
Dependent Claim
71 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein at least one of the thin film transistors has a semiconductor film which has a first crystallinity and includes crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has a semiconductor film having a second crystallinity lower than the first crystallinity.
Claim 31
Dependent Claim
72 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has an amorphous silicon film, and wherein the crystalline silicon film and the amorphous silicon film each includes hydrogen.
Claim 32
Dependent Claim
72 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has an amorphous silicon film, and wherein the crystalline silicon film and the amorphous silicon film each includes hydrogen.
Claim 33
Dependent Claim
66 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has an amorphous silicon film, and wherein the crystalline silicon film includes nickel.
Claim 34
Dependent Claim
66 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has an amorphous silicon film, and wherein the crystalline silicon film includes nickel.
Claim 35
Dependent Claim
20 words
The device of claim 21 wherein the nickel has a concentration of 1×10 15 to 5×10 19 atoms/cm 3 .
Claim 36
Dependent Claim
93 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has an amorphous silicon film, and wherein the crystalline silicon film and the amorphous silicon film each includes nickel and a concentration of nickel included in the crystalline silicon film is higher than that included in the amorphous silicon film.
Claim 37
Dependent Claim
93 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein at least one of the thin film transistors has a crystalline silicon film including crystals having a crystal growth direction in parallel to the substrate and at least another one of the thin film transistors has an amorphous silicon film, and wherein the crystalline silicon film and the amorphous silicon film each includes nickel and a concentration of nickel included in the crystalline silicon film is higher than that included in the amorphous silicon film.
Claim 38
Dependent Claim
24 words
The device of claim 23 wherein the nickel has a concentration of 1×10 15 to 5×10 19 atoms/cm 3 in the crystalline silicon film.
References Cited (Backward Citations)
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