Patent US5600154A successfully refreshed from Google Patents.
US5600154A
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Thin film transistor with particular nitrogen concentration
Assignee: Renesas Electronics Corp
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Filing: 1995-10-20
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Granted: 1997-02-04
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Expires: 2015-10-20
Abstract
Abstract According to a method of manufacturing a thin film transistor (TFT), amorphous silicon is formed by ion-implanting either silicon or nitrogen into a region of polysilicon while a region located at the sidewall of a gate electrode is selectively left using the stepped portion of the gate electrode. Then, a heat treatment is applied to convert the amorphous silicon into polysilicon with the remaining polysilicon as a seed crystal. As a result, polysilicon having crystal grains of great grain size can be formed in uniform. Thus, the electric characteristics of a TFT can be improved with no difference in the electric characteristics between each TFT.
Inventors
- 👤 Satoshi Shimizu
- 👤 Shuichi Ueno
- 👤 Shigenobu Maeda
- 👤 Takashi Ipposhi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 08:29
CPC Classifications
H; H10; H10B; H10B10/00; H10B10/12; H10B10/125; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/6717; H10D30/6729; H10D30/673; H10D30/6731; H10D30/6732; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0227; H10D86/0229; H10P; H10P10/00; Y; Y10; Y10S; Y10S257/00; Y10S257/914
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
115 words
A thin film transistor comprising: a gate electrode formed on an insulating film, a gate insulating film formed to cover said gate electrode, a polysilicon film formed on said gate insulating film, having a pair of source/drain regions on a main surface thereof with a predetermined distance therebetween to sandwich a channel region, wherein all crystals located in at least said channel region and said source/drain region of said polysilicon film has a grain size of at least 1000 Å, wherein nitrogen is included in at least said channel region and said source/drain regions of said polysilicon film, and said nitrogen is accumulated at the interface of the polysilicon film and the gate insulating film.
Claim 2
Dependent Claim
115 words
A thin film transistor comprising: a gate electrode formed on an insulating film, a gate insulating film formed to cover said gate electrode, a polysilicon film formed on said gate insulating film, having a pair of source/drain regions on a main surface thereof with a predetermined distance therebetween to sandwich a channel region, wherein all crystals located in at least said channel region and said source/drain region of said polysilicon film has a grain size of at least 1000 Å, wherein nitrogen is included in at least said channel region and said source/drain regions of said polysilicon film, and said nitrogen is accumulated at the interface of the polysilicon film and the gate insulating film.
References Cited (Backward Citations)
US5266816A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-02-04 | 2000-08-05 | 2001-02-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-02-04 | 2004-08-05 | 2005-02-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-02-04 | 2008-08-05 | 2009-02-04 | $7700.00 | Window Closed / Lapsed |