Semiconductor integrated circuit device having dummy pattern effective against micro loading effect

Claim 2

A semiconductor integrated circuit device fabricated on a semiconductor substrate having a major area and a test pattern area, comprising: a) an integrated circuit formed in said major area, and having a plurality of circuit components and a second circuit component, a plurality of pattern components being incorporated in said plurality of circuit components at first intervals, said second circuit component being spaced from said plurality of pattern components by a first distance; b) a test component having a test pattern and used for evaluating at least one of said plurality of circuit components; and c) a peripheral dummy pattern formed in said test pattern area, surrounding said test component and spaced from said test pattern by a second distance equal to said first distance, said peripheral dummy pattern and said test pattern being concurrently patterned together with said plurality of pattern components.

Claim 3

The semiconductor integrated circuit device as set forth in claim 1, in which further comprising a plurality of dummy pattern components formed inside of said peripheral dummy pattern, said dummy pattern components being formed concurrently with said plurality of pattern components, said test pattern and said peripheral dummy pattern.

Claim 4

The semiconductor integrated circuit device as set forth in claim 2, in which said test pattern and said plurality of dummy pattern components are spaced from one another at second intervals equal to said first intervals.

Claim 5

The semiconductor integrated circuit device as set forth in claim 2, in which said dummy pattern components, said plurality of pattern components, said test pattern and said peripheral dummy pattern are patterned by using a dry etching.

Claim 6

A semiconductor integrated circuit device fabricated on a semiconductor substrate having a major surface and a test pattern area, comprising: an integrated circuit formed in said major surface, and including a plurality of field effect transistors respectively having first gate electrodes spaced at first intervals and a second circuit component spaced from said gate electrodes by a first distance; a test transistor formed in said test pattern area for evaluating said plurality of field effect transistors, and having a second gate electrode; a plurality of dummy pattern components formed in said test pattern area and provided on both sides of said second gate electrode, said second gate electrode and said plurality of dummy pattern components being spaced at second intervals approximately equal to said first intervals; and a peripheral dummy pattern formed in said test pattern area, and surrounding said second gate electrode and said plurality of dummy pattern components, said peripheral dummy pattern being spaced from said second gate electrode by a second distance approximately equal to said first distance, said first gate electrodes, said second circuit component, said second gate electrode, said plurality of dummy pattern components and said peripheral dummy pattern being concurrently formed through a dry etching.

Claim 7

A semiconductor integrated circuit device fabricated on a semiconductor substrate having a major surface and a test pattern area, comprising: an integrated circuit formed in said major surface, and including a plurality of field effect transistors respectively having first gate electrodes spaced at first intervals and a second circuit component spaced from said gate electrodes by a first distance; a test transistor formed in said test pattern area for evaluating said plurality of field effect transistors, and having a second gate electrode; a plurality of dummy pattern components formed in said test pattern area and provided on both sides of said second gate electrode, said second gate electrode and said plurality of dummy pattern components being spaced at second intervals approximately equal to said first intervals; and a peripheral dummy pattern formed in said test pattern area, and surrounding said second gate electrode and said plurality of dummy pattern components, said peripheral dummy pattern being spaced from said second gate electrode by a second distance approximately equal to said first distance, said first gate electrodes, said second circuit component, said second gate electrode, said plurality of dummy pattern components and said peripheral dummy pattern being concurrently formed through a dry etching.

Claim 8

A semiconductor integrated circuit device fabricated on a semiconductor substrate having a major area and a test pattern area, comprising: an integrated circuit formed in said major area, and having a first wiring line and second wiring lines formed therein, said second wiring lines being spaced from said first wiring line by a first distance; an open-check pattern formed in said test pattern area for evaluating said first wiring line; and a peripheral dummy pattern formed in said test pattern area, and surrounding said open-check pattern, said peripheral dummy pattern being spaced from said open-check pattern by a second distance approximately equal to said first distance, said first wiring line, said second wiring lines, said open-check pattern and said peripheral dummy pattern being concurrently formed through a dry etching.

Claim 9

A semiconductor integrated circuit device fabricated on a semiconductor substrate having a major area and a test pattern area, comprising: an integrated circuit formed in said major area, and having a first wiring line and second wiring lines formed therein, said second wiring lines being spaced from said first wiring line by a first distance; an open-check pattern formed in said test pattern area for evaluating said first wiring line; and a peripheral dummy pattern formed in said test pattern area, and surrounding said open-check pattern, said peripheral dummy pattern being spaced from said open-check pattern by a second distance approximately equal to said first distance, said first wiring line, said second wiring lines, said open-check pattern and said peripheral dummy pattern being concurrently formed through a dry etching.