US5597768A
Expired / Lapsed
US
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Method of forming a Ga2 O3 dielectric layer
Assignee: NXP USA Inc
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Filing: 1996-03-21
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Granted: 1997-01-28
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Expires: 2016-03-21
Abstract
Abstract A method of forming a dielectric layer on a supporting structure of III-V material having a clean and atomically ordered surface to be coated with a dielectric layer including the step of depositing a layer of Ga 2 O 3 , having a sublimation temperature, on the surface of the supporting structure by evaporation using a high purity single crystal of material including Ga 2 O 3 and a second oxide with a melting point greater than 700° C. above the sublimation temperature of the Ga 2 O 3 . The evaporation can be performed by any one of thermal evaporation, electron beam evaporation, and laser ablation.
Inventors
- 👤 Matthias Passlack
- 👤 Jonathan K. Abrokwah
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:42
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/6332; H10P14/69391; Y; Y10; Y10S; Y10S148/00; Y10S148/118
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
71 words
A method of forming a dielectric layer on a supporting structure comprising the steps of: providing a supporting structure of III-V material having a surface to be coated with a dielectric layer; and depositing a layer of Ga 2 O 3 on the surface of the supporting structure by evaporation using a high purity single crystal MgGa 3 O 4 source at substrate temperatures ranging from 0° C. to 620° C.
Claim 2
Independent Claim
71 words
A method of forming a dielectric layer on a supporting structure comprising the steps of: providing a supporting structure of III-V material having a surface to be coated with a dielectric layer; and depositing a layer of Ga 2 O 3 on the surface of the supporting structure by evaporation using a high purity single crystal MgGa 3 O 4 source at substrate temperatures ranging from 0° C. to 620° C.
Claim 3
Dependent Claim
36 words
A method of forming a dielectric layer on a supporting structure as claimed in claim 1 wherein the layer of Ga 2 O 3 is formed to a thickness equal to or greater than 30 Angstroms.
Claim 4
Dependent Claim
39 words
A method of forming a dielectric layer on a supporting structure as claimed in claim 1 wherein the layer of Ga 2 O 3 is formed to a thickness in a preferred range of 20 angstroms to 50 Angstroms.
Claim 5
Dependent Claim
48 words
A method of forming a dielectric layer on a supporting structure as claimed in claim 1 wherein the step of depositing a layer of Ga 2 O 3 on the surface of the supporting structure by evaporation includes one of thermal evaporation, electron beam evaporation, and laser ablation.
Claim 6
Dependent Claim
30 words
A method of forming a dielectric layer on a supporting structure as claimed in claim 1 wherein the step of providing a supporting structure includes providing a layer of GaAs.
Claim 7
Independent Claim
91 words
A method of forming a dielectric layer on a supporting structure comprising the steps of: providing a supporting structure of III-V material having a surface to be coated with a dielectric layer; and depositing a layer of Ga 2 O 3 , having a sublimation temperature, on the surface of the supporting structure by evaporation using a high purity single crystal of material including Ga 2 O 3 and a second oxide with a melting point greater than 700° C. above the sublimation temperature of the Ga 2 O 3 .
Claim 8
Independent Claim
91 words
A method of forming a dielectric layer on a supporting structure comprising the steps of: providing a supporting structure of III-V material having a surface to be coated with a dielectric layer; and depositing a layer of Ga 2 O 3 , having a sublimation temperature, on the surface of the supporting structure by evaporation using a high purity single crystal of material including Ga 2 O 3 and a second oxide with a melting point greater than 700° C. above the sublimation temperature of the Ga 2 O 3 .
Claim 9
Dependent Claim
33 words
A method of forming a dielectric layer on a supporting structure as claimed in claim 6 wherein the step of depositing is performed at substrate temperatures ranging from 0° C. to 620° C.
Claim 10
Dependent Claim
52 words
A method of forming a dielectric layer on a supporting structure as claimed in claim 6 where, in the step of depositing, the high purity single crystal of material the second oxide preferably has a melting point greater than 800° C. above the sublimation temperature of the Ga 2 O 3 .
Claim 11
Dependent Claim
36 words
A method of forming a dielectric layer on a supporting structure as claimed in claim 6 wherein the layer of Ga 2 O 3 is formed to a thickness equal to or greater than 20 angstroms.
Claim 12
Dependent Claim
39 words
A method of forming a dielectric layer on a supporting structure as claimed in claim 9 wherein the layer of Ga 2 O 3 is formed to a thickness in a preferred range of 20 angstroms to 50 angstroms.
Claim 13
Dependent Claim
48 words
A method of forming a dielectric layer on a supporting structure as claimed in claim 6 wherein the step of depositing a layer of Ga 2 O 3 on the surface of the supporting structure by evaporation includes one of thermal evaporation, electron beam evaporation, and laser ablation.
Claim 14
Dependent Claim
30 words
A method of forming a dielectric layer on a supporting structure as claimed in claim 6 wherein the step of providing a supporting structure includes providing a layer of GaAs.
Claim 15
Independent Claim
95 words
A method of forming a stable semiconductor device comprising the steps of: providing an at least partially completed semiconductor device including supporting structure of III-V material having a surface to be coated with a dielectric layer; and depositing a layer of Ga 2 O 3 , having a sublimation temperature, on the surface of the supporting structure by evaporation using a high purity single crystal of material including Ga 2 O 3 and a second oxide with a melting point greater than 700° C. above the sublimation temperature of the Ga 2 O 3 .
Claim 16
Independent Claim
95 words
A method of forming a stable semiconductor device comprising the steps of: providing an at least partially completed semiconductor device including supporting structure of III-V material having a surface to be coated with a dielectric layer; and depositing a layer of Ga 2 O 3 , having a sublimation temperature, on the surface of the supporting structure by evaporation using a high purity single crystal of material including Ga 2 O 3 and a second oxide with a melting point greater than 700° C. above the sublimation temperature of the Ga 2 O 3 .
Claim 17
Dependent Claim
40 words
A method of forming a stable semiconductor device as claimed in claim 13 wherein the step of providing the at least partially completed semiconductor device includes providing one of a metal-oxide field effect transistor, an HBT, and a semiconductor laser.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-01-28 | 2000-07-29 | 2001-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-01-28 | 2004-07-29 | 2005-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-01-28 | 2008-07-29 | 2009-01-28 | $7700.00 | Window Closed / Lapsed |