Patent US5597741A successfully refreshed from Google Patents.
US5597741A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for forming a recrystallized layer and diffusing impurities
Assignee: Canon Inc
•
Filing: 1995-02-17
•
Granted: 1997-01-28
•
Expires: 2015-02-17
Abstract
Abstract A process for preparing a semiconductor device, in which a polycrystalline silicon film is formed on a monocrystalline semiconductor substrate and arsenic or phosphorus is injected as an impurity into the polycrystalline silicon film by an ion-injection method to make the polycrystalline silicon film an amorphous layer. The amorphous layer is heat-treated at a temperature of 600 DEG C. to 650 DEG C. to recrystallize the amorphous layer, thus forming a recrystallized layer having a grain size greater than that of the polycrystalline silicon film by solid phase growth. The recrystallized layer is heat-treated at a temperature of 800 DEG C. to 900 DEG C. to diffuse the impurity into the monocrystalline semiconductor substrate.
Inventors
- 👤 Masaru Sakamoto
- 👤 Masakazu Morishita
- 👤 Shigeru Nishimura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:48
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3238; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/38; H10P14/3802; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171; H10P32/30; H10P32/302; Y; Y10; Y10S; Y10S148/00; Y10S148/123; Y10S438/00; Y10S438/914; Y10S438/923
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
105 words
A process for preparing a semiconductor device, comprising the steps of: forming a polycrystalline silicon film on monocrystalline semiconductor substrate; injecting arsenic or phosphorus as an impurity into the polycrystalline silicon film by an ion-injection method to make the polycrystalline silicon film an amorphous layer; heat-treating the amorphous layer at a temperature of 600° C. to 650° C. to recrystallize the amorphous layer and form a recrystallized layer having a grain size greater than that of polycrystalline silicon by solid phase growth; and heat-treating the recrystallized layer at a temperature of 800° C. to 900° C. to diffuse the impurity into the monocrystalline semiconductor substrate.
Claim 2
Dependent Claim
105 words
A process for preparing a semiconductor device, comprising the steps of: forming a polycrystalline silicon film on monocrystalline semiconductor substrate; injecting arsenic or phosphorus as an impurity into the polycrystalline silicon film by an ion-injection method to make the polycrystalline silicon film an amorphous layer; heat-treating the amorphous layer at a temperature of 600° C. to 650° C. to recrystallize the amorphous layer and form a recrystallized layer having a grain size greater than that of polycrystalline silicon by solid phase growth; and heat-treating the recrystallized layer at a temperature of 800° C. to 900° C. to diffuse the impurity into the monocrystalline semiconductor substrate.
Claim 3
Dependent Claim
34 words
A process for preparing a semiconductor device according to claim 1, wherein the polycrystalline silicon film is used for at least one selected from electrodes, wirings and the gate electrodes of an MOS transistor.
Claim 4
Dependent Claim
65 words
A process for preparing a semiconductor device comprising the steps of: forming an amorphous silicon semiconductor layer on a monocrystalline silicon substrate; ion-injecting an impurity into the amorphous semiconductor layer; and heat-treating the ion-injected amorphous semiconductor layer to convert the amorphous silicon semiconductor layer into a polycrystalline or monocrystalline silicon layer; and conducting a heat treatment to diffuse the impurity into the monocrystalline silicon substrate.
Claim 5
Dependent Claim
65 words
A process for preparing a semiconductor device comprising the steps of: forming an amorphous silicon semiconductor layer on a monocrystalline silicon substrate; ion-injecting an impurity into the amorphous semiconductor layer; and heat-treating the ion-injected amorphous semiconductor layer to convert the amorphous silicon semiconductor layer into a polycrystalline or monocrystalline silicon layer; and conducting a heat treatment to diffuse the impurity into the monocrystalline silicon substrate.
Claim 6
Dependent Claim
86 words
A process for preparing a semiconductor device comprising the steps of: forming a polycrystalline silicon semiconductor layer on a monocrystalline silicon substrate; ion-injecting atoms of Group IV of the periodic table at a concentration of 2×10 19 /cm 3 or higher into the polycrystalline silicon semiconductor layer to make the polycrystalline silicon semiconductor layer an amorphous layer; injecting an impurity into the amorphous layer; heat-treating the amorphous layer to make the amorphous layer a monocrystalline silicon layer; and diffusing the impurity into the monocrystalline silicon substrate.
Claim 7
Dependent Claim
86 words
A process for preparing a semiconductor device comprising the steps of: forming a polycrystalline silicon semiconductor layer on a monocrystalline silicon substrate; ion-injecting atoms of Group IV of the periodic table at a concentration of 2×10 19 /cm 3 or higher into the polycrystalline silicon semiconductor layer to make the polycrystalline silicon semiconductor layer an amorphous layer; injecting an impurity into the amorphous layer; heat-treating the amorphous layer to make the amorphous layer a monocrystalline silicon layer; and diffusing the impurity into the monocrystalline silicon substrate.
Claim 8
Dependent Claim
104 words
A process for preparing a semiconductor device comprising the steps of: forming a polycrystalline semiconductor region with a thickness t on a monocrystalline semiconductor substrate; ion-injecting an impurity into the polycrystalline semiconductor region, thereby converting at least a part of the polycrystalline semiconductor region into an amorphous semiconductor region with a thickness Xc and satisfying 0.8t≦Xc; heat-treating the monocrystalline semiconductor substrate including the converted amorphous semiconductor region at a first temperature of 600° C. to 650° C.; and heat-treating the heat-treated monocrystalline semiconductor substrate at a second temperature, that is higher than the first temperature, to diffuse the impurity into the monocrystalline semiconductor substrate.
Claim 9
Dependent Claim
104 words
A process for preparing a semiconductor device comprising the steps of: forming a polycrystalline semiconductor region with a thickness t on a monocrystalline semiconductor substrate; ion-injecting an impurity into the polycrystalline semiconductor region, thereby converting at least a part of the polycrystalline semiconductor region into an amorphous semiconductor region with a thickness Xc and satisfying 0.8t≦Xc; heat-treating the monocrystalline semiconductor substrate including the converted amorphous semiconductor region at a first temperature of 600° C. to 650° C.; and heat-treating the heat-treated monocrystalline semiconductor substrate at a second temperature, that is higher than the first temperature, to diffuse the impurity into the monocrystalline semiconductor substrate.
Claim 10
Dependent Claim
26 words
A process for preparing a semiconductor device according to claim 5, wherein the impurity is at least one element selected from As, Ge, B, P, Sb.
Claim 11
Dependent Claim
26 words
A process for preparing a semiconductor device according to claim 5, wherein the impurity is As and ion injected at 3×10 14 /cm 2 or higher.
Claim 12
Dependent Claim
26 words
A process for preparing a semiconductor device according to claim 5, wherein the impurity is B and ion injected at 2×10 16 /cm 2 or higher.
Claim 13
Dependent Claim
26 words
A process for preparing a semiconductor device according to claim 5, wherein the impurity is P and ion injected at 1×10 15 /cm 2 or higher.
Claim 14
Dependent Claim
26 words
A process for preparing a semiconductor device according to claim 5, wherein the impurity is Sb and ion injected at 1×10 14 /cm 2 or higher.
Claim 15
Dependent Claim
93 words
A process for preparing a semiconductor device, comprising the steps of: forming an insulating layer on a monocrystalline semiconductor substrate; forming windows having different sizes in the insulating layer, then forming a first layer of polycrystalline silicon on the insulating layer; forming a second layer of silicon oxide on the first layer; removing at least the second layer by etching to make uniform the thickness of the layers formed on the monocrystalline semiconductor substrate; injecting an impurity into at least the first layer; and heat-treating the first layer including the monocrystalline semiconductor substrate.
Claim 16
Dependent Claim
93 words
A process for preparing a semiconductor device, comprising the steps of: forming an insulating layer on a monocrystalline semiconductor substrate; forming windows having different sizes in the insulating layer, then forming a first layer of polycrystalline silicon on the insulating layer; forming a second layer of silicon oxide on the first layer; removing at least the second layer by etching to make uniform the thickness of the layers formed on the monocrystalline semiconductor substrate; injecting an impurity into at least the first layer; and heat-treating the first layer including the monocrystalline semiconductor substrate.
Claim 17
Dependent Claim
18 words
A process for preparing a semiconductor device according to claim 11, wherein the first layer is polycrystalline silicon.
Claim 18
Dependent Claim
23 words
A process for preparing a semiconductor device according to claim 11, wherein the insulating layer is made of silicon oxide or phospho-silicate glass.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-01-28 | 2000-07-29 | 2001-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-01-28 | 2004-07-29 | 2005-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-01-28 | 2008-07-29 | 2009-01-28 | $7700.00 | Window Closed / Lapsed |