US5595857A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a pattern and projection exposure apparatus
Assignee: Hitachi Ltd
•
Filing: 1995-10-18
•
Granted: 1997-01-21
•
Expires: 2015-10-18
Abstract
Abstract A novel method of pattern formation and a projection exposure apparatus are disclosed, in which the pupil of a projection lens of the projection exposure apparatus used for forming an LSI pattern or the like has mounted thereon an optical filter having a complex amplitude transmittance distribution expressed substantially as T(r)=cos (2πβr 2 -θ/2) as a function of a radial coordinate r normalized by the maximum radius of the pupil. Alternatively, Fourier transform of a layout pattern drawn on the LSI is obtained, an obtained Fourier transform data is multiplied by cos (2πβf 2 -θ/2) (where f is a spatial frequency, and β, θ appropriate real numbers), the inverse Fourier transform of the resulting product is taken to produce a pattern, and this pattern or an approximate solution thereof is used as a mask pattern thereby to produce an LSI by exposure. As a result, even when the NA is increased and the wavelength shortened to improve the resolution limit, a large depth of focus and a high image quality are obtained at the same time. It is thus possible to form a pattern of 0.2 to 0.3 μm by the use of an optical exposure system.
Inventors
- 👤 Hiroshi Fukuda
- 👤 Tsuneo Terasawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 12:26
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/26; G03F1/30; H; H10; H10P; H10P14/00; H10P14/60; G03F1/29; G03F7/00; G03F7/20; G03F7/2002; G03F7/70; G03F7/70058; G03F7/70125; G03F7/70191; G03F7/70216; G03F7/70241; G03F7/70308; G03F7/70325; G03F7/70333; G03F1/36
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
85 words
A method of manufacturing a semiconductor device having a principal surface to be processed, comprising the steps of: preparing a mask having a predetermined pattern; preparing a projection lens structure having a filter; forming first and second projected images of said predetermined pattern at a first image plane and a second image plane, respectively; setting said principal surface between said first and second image planes; and exposing said mask with light to project said predetermined pattern onto said principal surface through said projection lens structure.
Claim 2
Independent Claim
85 words
A method of manufacturing a semiconductor device having a principal surface to be processed, comprising the steps of: preparing a mask having a predetermined pattern; preparing a projection lens structure having a filter; forming first and second projected images of said predetermined pattern at a first image plane and a second image plane, respectively; setting said principal surface between said first and second image planes; and exposing said mask with light to project said predetermined pattern onto said principal surface through said projection lens structure.
Claim 3
Dependent Claim
19 words
A method of manufacturing a semiconductor device according to claim 1, wherein said light comprises an excimer laser beam.
Claim 4
Independent Claim
91 words
A method of manufacturing a semiconductor device, comprising the steps of: preparing a mask having a predetermined pattern; preparing a projection lens structure having a filter for partially phase-shifting light passing therethrough and for increasing uniformity of light intensity distribution along a light axis in the vicinity of an image plane of said projection lens structure; setting a principal surface of said semiconductor device in the vicinity of said image plane; and exposing said mask with light to project said predetermined pattern onto said principal surface through said projection lens structure.
Claim 5
Independent Claim
91 words
A method of manufacturing a semiconductor device, comprising the steps of: preparing a mask having a predetermined pattern; preparing a projection lens structure having a filter for partially phase-shifting light passing therethrough and for increasing uniformity of light intensity distribution along a light axis in the vicinity of an image plane of said projection lens structure; setting a principal surface of said semiconductor device in the vicinity of said image plane; and exposing said mask with light to project said predetermined pattern onto said principal surface through said projection lens structure.
Claim 6
Dependent Claim
19 words
A method of manufacturing a semiconductor device according to claim 3, wherein said light comprises an excimer laser beam.
Claim 7
Independent Claim
79 words
A method of manufacturing a semiconductor device, comprising the steps of: preparing a mask having a predetermined pattern; preparing a projection lens structure having a filter with a first region and a second region for passing light therethrough with different respective phases; setting a principle surface of the semiconductor device at the exposure field of said projection lens structure; and exposing said mask with light to project said predetermined pattern onto said principal surface through said projection lens structure.
Claim 8
Independent Claim
79 words
A method of manufacturing a semiconductor device, comprising the steps of: preparing a mask having a predetermined pattern; preparing a projection lens structure having a filter with a first region and a second region for passing light therethrough with different respective phases; setting a principle surface of the semiconductor device at the exposure field of said projection lens structure; and exposing said mask with light to project said predetermined pattern onto said principal surface through said projection lens structure.
Claim 9
Dependent Claim
19 words
A method of manufacturing a semiconductor device according to claim 5, wherein said light comprises an excimer laser beam.
Claim 10
Dependent Claim
28 words
A method of manufacturing a semiconductor device according to claim 5, wherein one of said first and second regions comprises a Cr pattern having a discrete thickness distribution.
Claim 11
Dependent Claim
40 words
A method of manufacturing a semiconductor device according to claim 5, wherein said filter comprises a substrate through which said light passes without shifting phase, and a phase-shifting film on said substrate which phase-shifts light passing through said phase-shifting film.
Claim 12
Dependent Claim
35 words
A method of manufacturing a semiconductor device according to claim 8, wherein said substrate comprises quartz and said film comprises one of Al, Cr, MgF 2 , SiO 2 , and layered Al/SiO 2 .
Claim 13
Independent Claim
177 words
A method of manufacturing a semiconductor device having first and second layers to be processed, comprising: preparing a mask having a hole pattern for projection onto said first layer and a line-and-space pattern for projection onto said second layer; preparing a projection lens structure; preparing a first filter operably corresponding to said hole pattern and comprising a first region and a second region for passing light having different respective phases; preparing a second filter operably corresponding to said line-and-space pattern and comprising a third region and a fourth region for passing light having different respective phases; inserting one of said first and second filters into said lens structure in response to presence of one of said hole pattern and said line-and-space pattern being in a projection light path; setting said semiconductor device at the exposure field of said projection lens structure; and exposing said mask with projection light to project one of said hole pattern and said line-and-space pattern onto a respective one of said first and second layers of said device through said projection lens structure.
Claim 14
Independent Claim
177 words
A method of manufacturing a semiconductor device having first and second layers to be processed, comprising: preparing a mask having a hole pattern for projection onto said first layer and a line-and-space pattern for projection onto said second layer; preparing a projection lens structure; preparing a first filter operably corresponding to said hole pattern and comprising a first region and a second region for passing light having different respective phases; preparing a second filter operably corresponding to said line-and-space pattern and comprising a third region and a fourth region for passing light having different respective phases; inserting one of said first and second filters into said lens structure in response to presence of one of said hole pattern and said line-and-space pattern being in a projection light path; setting said semiconductor device at the exposure field of said projection lens structure; and exposing said mask with projection light to project one of said hole pattern and said line-and-space pattern onto a respective one of said first and second layers of said device through said projection lens structure.
Claim 15
Dependent Claim
40 words
A method of manufacturing a semiconductor device according to claim 10, further comprising the step of preparing a third, non-phase-shifting filter, said third filter being inserted into said projection lens structure in the absence of said first and second filters.
Claim 16
Dependent Claim
34 words
A method of manufacturing a semiconductor device according to claim 1, wherein said third filter comprises an optical parallel plate having the same material and thickness as those of said first and second filters.
References Cited (Backward Citations)
JPS5612615A
Cited
US4370405A
Cited
JPS6141150A
Cited
EP0235910A1
Cited
JPS62212617A
Cited
US4902899A
Cited
EP0367126A2
Cited
EP0370935A2
Cited
US5045417A
Cited
US5003567A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-01-21 | 2000-07-22 | 2001-01-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-01-21 | 2004-07-22 | 2005-01-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-01-21 | 2008-07-22 | 2009-01-21 | $7700.00 | Window Closed / Lapsed |