EP0370935A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of forming conductive lines and studs
Assignee: International Business Machines Corp
•
Filing: 1989-10-10
•
Granted: —
•
Expires: 2009-10-10
Abstract
Abstract A method is provided for forming a conductive stud and line over a surface (12), comprising the steps of forming at least a first layer of material (14) over the region on the surface whereat the conductive stud and line are to be formed; forming a layer (22) of dual image photoresist over the material; exposing the dual image photoresist to radiation so as to form at least first and second regions (22A, 22B, 22C) exhibiting different development characteristics; developing the first region (22A) so as to expose a portion of the material; removing the exposed portion of the material so as to define the position of one of the conductive line or stud; developing the second region to expose more of the material; and removing the newly exposed portion of material so as to define the position of the other of the conductive line (16′/18′) or stud (20′).
Inventors
- 👤 Nancy Ann Greco
- 👤 Stephen Edward Greco
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 12:47
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063; H10W20/0633; H10W20/069; H10W20/0693; H10W20/071; H10W20/081; H10W20/084; H10W20/088; H05; H05K; H05K3/00; H05K3/46; H05K3/4644; H05K3/4647; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
83 words
A method of forming a conductive stud and line over a surface, comprising the steps of, forming a layer of dual image photoresist over the region on said surface whereat said conductive line and stud are to be formed; exposing said dual image photoresist to radiation so as to form at least first and second regions exhibiting different development characteristics; and separately developing said first and second regions of said dual image photoresist to define the position of said conductive line and stud.
Claim 2
Independent Claim
83 words
A method of forming a conductive stud and line over a surface, comprising the steps of, forming a layer of dual image photoresist over the region on said surface whereat said conductive line and stud are to be formed; exposing said dual image photoresist to radiation so as to form at least first and second regions exhibiting different development characteristics; and separately developing said first and second regions of said dual image photoresist to define the position of said conductive line and stud.
Claim 3
Dependent Claim
58 words
A method in accordance with claim 1 and further including the steps of: forming a layer of material beneath said dual image photoresist; and processing the portions of said layer of material exposed by said step of separately developing said first and second regions of photoresist so as to define the position of said conductive line and stud.
Claim 4
Dependent Claim
62 words
A method in accordance with claim 1 wherein said step of exposing said photoresist to form said first and second regions includes the steps of: positioning a single mask over said dual image photoresist, said single mask including at least one opaque region and one region for filtering incident radiation; and exposing said dual image photoresist to radiation through said single mask.
Claim 5
Independent Claim
138 words
A method of forming a conductive stud and line over a surface, comprising the steps of: forming at least a first layer of material over the region on said surface whereat said conductive stud and line are to be formed; forming a layer of dual image photoresist over said material; exposing said dual image photoresist to radiation so as to form at least first and second regions exhibiting different development characteristics; developing said first region so as to expose a portion of said material; removing the exposed portion of said material so as to define the position of one of said conductive line or stud; developing said second region to expose more of said material; and removing the newly exposed portion of material so as to define the position of the other of said conductive line or stud.
Claim 6
Independent Claim
138 words
A method of forming a conductive stud and line over a surface, comprising the steps of: forming at least a first layer of material over the region on said surface whereat said conductive stud and line are to be formed; forming a layer of dual image photoresist over said material; exposing said dual image photoresist to radiation so as to form at least first and second regions exhibiting different development characteristics; developing said first region so as to expose a portion of said material; removing the exposed portion of said material so as to define the position of one of said conductive line or stud; developing said second region to expose more of said material; and removing the newly exposed portion of material so as to define the position of the other of said conductive line or stud.
Claim 7
Dependent Claim
62 words
A method in accordance with claim 4 wherein said step of exposing said photoresist to form said first and second regions includes the steps of: positioning a single mask over said dual image photoresist, said single mask including at least one opaque region and two regions for filtering incident radiation; and exposing said dual image photoresist to radiation through said single mask.
Claim 8
Dependent Claim
27 words
A method in accordance with claim 5 wherein said two filter regions of said mask include at least one region for filtering the frequency of passed radiation.
Claim 9
Dependent Claim
103 words
A method in accordance with claim 4 wherein: said step of forming at least a first layer of material comprises the step of forming a sandwich including a layer of first material, a layer of etch stop, and a layer of second material consecutively over said surface; the first removing step includes etching the exposed portion of said second material at least to said etch stop; and the second removing step includes etching the newly exposed portion of said second material at least to said etch stop while simultaneously etching any remaining first material exposed during said first removing step to said surface.
Claim 10
Dependent Claim
17 words
A method in accordance with claim 5 wherein said dual image photoresist comprises a dual tone photoresist.
Claim 11
Dependent Claim
25 words
A method in accordance with claim 4 wherein said first layer of material comprises conductive material from which said conductive line and stud are formed.
Claim 12
Dependent Claim
35 words
A method in accordance with claim 4 wherein said first layer of material comprises an insulating material for forming a matrix to receive a conductive material from which said conductive line and stud are formed.
Claim 13
Dependent Claim
20 words
A method in accordance with claim 10 and further including the step of filling said matrix with a conductive material.
Claim 14
Dependent Claim
39 words
A method in accordance with claim 4 and further including the step of, after said first developing step, blanket exposing the second region to radiation so that said second region has the same development characteristics as said first region.
Claim 15
Independent Claim
190 words
A method of forming a conductive stud self-aligned on a conductive line, comprising the steps of: providing a semiconductor device having a surface over which it is desired to form said conductive line and stud; forming at least a first layer of conductive material over the region on said surface whereat said conductive stud and line are to be formed; forming a layer of dual image photoresist over said conductive material; exposing said dual image photoresist to radiation through a single mask so as to form first, second, and third regions having different development characteristics; developing said first region to expose an underlying portion of said conductive material; etching the exposed portion of conductive material using the remaining dual image photoresist as a mask to form said conductive line; blanket exposing said dual image photoresist to radiation such that said second region has the same development characteristics as said first region; developing said second region so as to expose more of said conductive material; etching the newly exposed conductive material using the remaining dual image photoresist as a mask to provide said stud; and removing the remaining dual image photoresist.
Claim 16
Independent Claim
190 words
A method of forming a conductive stud self-aligned on a conductive line, comprising the steps of: providing a semiconductor device having a surface over which it is desired to form said conductive line and stud; forming at least a first layer of conductive material over the region on said surface whereat said conductive stud and line are to be formed; forming a layer of dual image photoresist over said conductive material; exposing said dual image photoresist to radiation through a single mask so as to form first, second, and third regions having different development characteristics; developing said first region to expose an underlying portion of said conductive material; etching the exposed portion of conductive material using the remaining dual image photoresist as a mask to form said conductive line; blanket exposing said dual image photoresist to radiation such that said second region has the same development characteristics as said first region; developing said second region so as to expose more of said conductive material; etching the newly exposed conductive material using the remaining dual image photoresist as a mask to provide said stud; and removing the remaining dual image photoresist.
Claim 17
Independent Claim
202 words
A method of forming a conductive stud self-aligned on a conductive line, comprising the steps of: providing a semiconductor device having a surface over which it is desired to form said conductive line and stud; forming at least a first layer of insulating material over the region on said surface whereat said conductive stud and line are to be formed; forming a layer of dual image photoresist over said insulating material; exposing said dual image photoresist to radiation through a mask so as to form first, second, and third regions having different development characteristics; developing said first region to expose an underlying portion of said insulating material; etching the exposed portion of insulating material using the remaining dual image photoresist as a mask to form a matrix for forming said conductive stud; blanket exposing said dual image photoresist to radiation such that said second region has the same development characteristics as said first region; developing said second region so as to expose more of said insulating material; etching the newly exposed insulating material using the remaining dual image photoresist as a mask to provide a matrix for forming said conductive line; and filling said stud and line matrices with a conductive material.
Claim 18
Independent Claim
202 words
A method of forming a conductive stud self-aligned on a conductive line, comprising the steps of: providing a semiconductor device having a surface over which it is desired to form said conductive line and stud; forming at least a first layer of insulating material over the region on said surface whereat said conductive stud and line are to be formed; forming a layer of dual image photoresist over said insulating material; exposing said dual image photoresist to radiation through a mask so as to form first, second, and third regions having different development characteristics; developing said first region to expose an underlying portion of said insulating material; etching the exposed portion of insulating material using the remaining dual image photoresist as a mask to form a matrix for forming said conductive stud; blanket exposing said dual image photoresist to radiation such that said second region has the same development characteristics as said first region; developing said second region so as to expose more of said insulating material; etching the newly exposed insulating material using the remaining dual image photoresist as a mask to provide a matrix for forming said conductive line; and filling said stud and line matrices with a conductive material.
Claim 19
Dependent Claim
19 words
A method in accordance with claim 14 or 15 wherein said dual image photoresist comprises a dual tone photoresist.
Claim 20
Dependent Claim
107 words
A method in accordance with claim 14 or 15 wherein: said step of forming at least a layer of conductive material comprises forming a stack including a first layer of insulating material, a layer of insulating etch stop, and a second layer of insulating material consecutively over said surface; the first etch step including etching through said stack at least to said insulating etch stop; the second etch step including etching through the newly exposed portion of said stack at least to said insulating etch stop while simultaneously etching through any remaining portion of said first insulating layer exposed during said first etch step to said surface.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.