Radio frequency probe and probe card including a signal needle and grounding needle coupled to a microstrip transmission line

Claim 2

A radio frequency probe for measuring radio frequency characteristics of a semiconductor device, the radio frequency probe comprising: an insulating substrate having a front surface, a back surface, and a side face; a microstrip transmission line including a signal line made of conductive material formed on the front surface of the insulating substrate and a grounding electrode made of conductive material formed on the substantially entire portion of the back surface of the insulating substrate; and a signal needle and a grounding needle electrically connected to the signal line and the grounding electrode, respectively, the signal needle and the grounding needle being close to each other and being disposed so that the distances from the side face to the top ends of the needles are substantially equal to each other so as to allow the signal needle and the grounding needle to contact a signal electrode pad and a grounding electrode pad of the semiconductor device simultaneously, the signal needle being disposed on the side face of the insulating substrate.

Claim 3

A radio frequency probe according to claim 1, wherein the insulating substrate has a shape of letter L.

Claim 4

A radio frequency probe according to claim 1, further comprising a matching capacitor, wherein the signal line is patterned and provided with the matching capacitor so that the impedance of the microstrip transmission line matches the impedance of the semiconductor device.

Claim 5

A probe card comprising: a radio frequency probe for measuring radio frequency characteristics of a semiconductor device, the radio frequency probe including: a first insulating substrate including a front surface, a back surface, and a side face; a first microstrip transmission line including a first signal line made of conductive material formed on the front surface of the first insulating substrate and a first grounding electrode made of conductive material formed on the substantially entire portion of the back surface of the first insulating substrate; and a signal needle and a grounding needle electrically connected to the first signal line and the first grounding electrode, respectively, the signal needle and the grounding needle being close to each other and being disposed so that the distances from the side face to the top ends of the needles are substantially equal to each other so as to allow the signal needle and the grounding needle to contact a signal electrode pad and a grounding electrode pad of the semiconductor device simultaneously; and the probe card further comprising: a second insulating substrate having a top surface, a bottom surface, a first through hole, and a plurality of second through holes, the first through hole and the plurality of second through holes being formed through the second insulating substrate; a second microstrip transmission line including a second signal line made of conductive material formed on the top surface of the second insulating substrate, a second grounding electrode formed on the substantially entire portion of the bottom surface of the second insulating substrate, and a top surface grounding electrode formed on the top surface of the second insulating substrate and connected to the second grounding electrode via the plurality of second through holes; and an impedance matching component disposed at least on the first and second microstrip transmission lines, wherein the radio frequency probe is held on the top surface of the second insulating substrate so as to be substantially vertical to the second insulating substrate, the signal needle and grounding needle extend to contact the semiconductor device through the first through hole, the first signal line is electrically connected to the second signal line, and the first grounding electrode is electrically connected to the top surface grounding electrode.

Claim 6

A probe card comprising: a radio frequency probe for measuring radio frequency characteristics of a semiconductor device, the radio frequency probe including: a first insulating substrate including a front surface, a back surface, and a side face; a first microstrip transmission line including a first signal line made of conductive material formed on the front surface of the first insulating substrate and a first grounding electrode made of conductive material formed on the substantially entire portion of the back surface of the first insulating substrate; and a signal needle and a grounding needle electrically connected to the first signal line and the first grounding electrode, respectively, the signal needle and the grounding needle being close to each other and being disposed so that the distances from the side face to the top ends of the needles are substantially equal to each other so as to allow the signal needle and the grounding needle to contact a signal electrode pad and a grounding electrode pad of the semiconductor device simultaneously; and the probe card further comprising: a second insulating substrate having a top surface, a bottom surface, a first through hole, and a plurality of second through holes, the first through hole and the plurality of second through holes being formed through the second insulating substrate; a second microstrip transmission line including a second signal line made of conductive material formed on the top surface of the second insulating substrate, a second grounding electrode formed on the substantially entire portion of the bottom surface of the second insulating substrate, and a top surface grounding electrode formed on the top surface of the second insulating substrate and connected to the second grounding electrode via the plurality of second through holes; and an impedance matching component disposed at least on the first and second microstrip transmission lines, wherein the radio frequency probe is held on the top surface of the second insulating substrate so as to be substantially vertical to the second insulating substrate, the signal needle and grounding needle extend to contact the semiconductor device through the first through hole, the first signal line is electrically connected to the second signal line, and the first grounding electrode is electrically connected to the top surface grounding electrode.