US5593505A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for cleaning semiconductor wafers with sonic energy and passing through a gas-liquid-interface
Assignee: SunEdison Inc
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Filing: 1995-04-19
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Granted: 1997-01-14
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Expires: 2015-04-19
Abstract
Abstract A method of cleaning a semiconductor wafer comprises placing liquid in a bath with a gas-liquid-interface defined at the surface of the liquid. A semiconductor wafer is placed in the bath so that it is oriented in a generally upright position with at least part of the wafer being in the liquid and below the gas-liquid-interface. Sonic energy is directed through the liquid. At least one of the position of the semiconductor wafer and the level of liquid in the bath relative to the semiconductor wafer is varied so that the entire surface of the wafer repeatedly passes through the gas-liquid-interface.
Inventors
- 👤 Henry F. Erk
- 👤 Ronald D. Bartram
- 👤 Eugene R. Hollander
- 👤 Jing Chai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:39
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/15; B; B08; B08B; B08B3/00; B08B3/04; B08B3/10; B08B3/12; H10P70/20; H10P72/00; H10P72/04; H10P72/0402; H10P72/0406; H10P72/0411; H10P72/0416; Y; Y10; Y10S; Y10S134/00; Y10S134/902
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
135 words
A method of cleaning a semiconductor wafer comprising the steps of: placing liquid in a bath, said liquid having a surface defining a level of said liquid, a gas-liquid-interface being defined at the surface of the liquid; positioning the semiconductor wafer in the bath so that at least part of the wafer is in the liquid and below the gas-liquid-interface; directing sonic energy through the liquid; carrying out at least one of the following steps a plurality of times: (a) raising and lowering the semiconductor wafer so that the entire surface of the wafer passes through the gas-liquid-interface and (b) raising and lowering the level of liquid in the bath relative to the semiconductor wafer so that the entire surface of the wafer passes through the gas-liquid-interface; and withdrawing the semiconductor wafer from the bath.
Claim 2
Independent Claim
135 words
A method of cleaning a semiconductor wafer comprising the steps of: placing liquid in a bath, said liquid having a surface defining a level of said liquid, a gas-liquid-interface being defined at the surface of the liquid; positioning the semiconductor wafer in the bath so that at least part of the wafer is in the liquid and below the gas-liquid-interface; directing sonic energy through the liquid; carrying out at least one of the following steps a plurality of times: (a) raising and lowering the semiconductor wafer so that the entire surface of the wafer passes through the gas-liquid-interface and (b) raising and lowering the level of liquid in the bath relative to the semiconductor wafer so that the entire surface of the wafer passes through the gas-liquid-interface; and withdrawing the semiconductor wafer from the bath.
Claim 3
Dependent Claim
47 words
A method as set forth in claim 1 wherein the step of carrying out at least one of the raising and lowering of the semiconductor wafer and the level of liquid in the bath relative to the semiconductor wafer comprises varying the position of the semiconductor wafer.
Claim 4
Dependent Claim
28 words
A method as set forth in claim 2 wherein the step of varying the position of the semiconductor wafer comprises moving the semiconductor wafer in a reciprocating motion.
Claim 5
Dependent Claim
24 words
A method as set forth in claim 2 wherein the step of varying the position of the semiconductor wafer comprises rotating the semiconductor wafer.
Claim 6
Dependent Claim
46 words
A method as set forth in claim 2 wherein the step of varying the position of the semiconductor wafer comprises rotating the semiconductor wafer while moving the semiconductor wafer in a reciprocating motion so that a central region of the wafer repeatedly passes through the gas-liquid-interface.
Claim 7
Dependent Claim
51 words
A method as set forth in claim 5 wherein the semiconductor wafer is rotated at a rate of at least about 8 rpm and is reciprocated at a rate of at least about 20 cycles per minute, each cycle comprising a single raising and a single lowering of the semiconductor wafer.
Claim 8
Independent Claim
87 words
A method of processing a semiconductor wafer comprising: placing liquid in a bath, said liquid having a surface, a gas-liquid-interface being defined at the surface of the liquid; positioning the semiconductor wafer in the bath so that at least part of the wafer is in the liquid and below the gas-liquid-interface; directing sonic energy through the liquid; and rotating the semiconductor wafer while moving the semiconductor wafer in a reciprocating motion relative to the bath so that the entire surface of the wafer passes through the gas-liquid-interface.
Claim 9
Independent Claim
87 words
A method of processing a semiconductor wafer comprising: placing liquid in a bath, said liquid having a surface, a gas-liquid-interface being defined at the surface of the liquid; positioning the semiconductor wafer in the bath so that at least part of the wafer is in the liquid and below the gas-liquid-interface; directing sonic energy through the liquid; and rotating the semiconductor wafer while moving the semiconductor wafer in a reciprocating motion relative to the bath so that the entire surface of the wafer passes through the gas-liquid-interface.
Claim 10
Dependent Claim
31 words
A method as set forth in claim 7 wherein moving the semiconductor wafer in a reciprocating motion causes a central region of the wafer to repeatedly pass through the gas-liquid interface.
Claim 11
Dependent Claim
75 words
A method as set forth in claim 7 wherein the position of the semiconductor wafer is varied relative to the bath by a wafer-moving mechanism, the wafer-moving mechanism comprising at least one camming surface engageable with a bottom portion of the periphery of the semiconductor wafer and rotatable about an axis of rotation, said camming surface being configured to rotate and reciprocate the semiconductor wafer as the camming surface rotates about said axis of rotation.
References Cited (Backward Citations)
JPS5469260A
Cited
JPS61247034A
Cited
US4804007A
Cited
US4869278A
Cited
US4869278B1
Cited
US4902350A
Cited
US5071776A
Cited
US4854337A
Cited
JPH03257826A
Cited
US5203798A
Cited
US5090432A
Cited
US5286657A
Cited
US5134103A
Cited
US5327921A
Cited
US5279316A
Cited
US5468302A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-01-14 | 2000-07-15 | 2001-01-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-01-14 | 2004-07-15 | 2005-01-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-01-14 | 2008-07-15 | 2009-01-14 | $7700.00 | Window Closed / Lapsed |