US5592425A
Expired / Lapsed
US
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Method and apparatus for testing a memory where data is passed through the memory for comparison with data read from the memory
Assignee: Micron Technology Inc
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Filing: 1995-12-20
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Granted: 1997-01-07
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Expires: 2015-12-20
Abstract
Abstract A bypass mode for an SRAM permitting data to be coupled from the write drivers to the sense amplifier without being written into the cells. The bypass mode is used during testing and is implemented by simultaneously activating the write drivers and sense amplifiers while inhibiting selection of any of the cells in the array. In effect the bitlines in the array are used as bus lines for directly coupling data through the array. The bypass mode eliminates the need for the lines used to couple a bit pattern to a compare circuit during testing thereby saving substrate cover.
Inventors
- 👤 Alex Neduva
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 15:26
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/04; G11C29/08; G11C29/12; G11C29/02; G11C29/48
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
47 words
A method for testing a memory in an integrated circuit comprising the steps of: reading a first bit pattern from the memory; passing a second bit pattern through the memory without storing the second bit pattern in the memory; and, comparing the first and second bit patterns.
Claim 2
Independent Claim
47 words
A method for testing a memory in an integrated circuit comprising the steps of: reading a first bit pattern from the memory; passing a second bit pattern through the memory without storing the second bit pattern in the memory; and, comparing the first and second bit patterns.
Claim 3
Dependent Claim
17 words
The method defined by claim 1 wherein the first and second bit patterns are the same pattern.
Claim 4
Independent Claim
97 words
A method for testing a memory in an integrated circuit where the memory includes a plurality of bitlines and memory cells comprising the steps of: providing a first bit pattern to the bitlines of the memory; writing the first bit pattern into predetermined memory cells of the memory; reading the first bit pattern from the predetermined memory cells of the memory; latching the first bit pattern; passing a second bit pattern through the memory on the bitlines without writing the second bit pattern into memory cells of the memory; and, comparing the first and second bit patterns.
Claim 5
Independent Claim
97 words
A method for testing a memory in an integrated circuit where the memory includes a plurality of bitlines and memory cells comprising the steps of: providing a first bit pattern to the bitlines of the memory; writing the first bit pattern into predetermined memory cells of the memory; reading the first bit pattern from the predetermined memory cells of the memory; latching the first bit pattern; passing a second bit pattern through the memory on the bitlines without writing the second bit pattern into memory cells of the memory; and, comparing the first and second bit patterns.
Claim 6
Independent Claim
97 words
A method for testing a memory in an integrated circuit where the memory includes a plurality of bitlines and memory cells comprising the steps of: passing a first bit pattern through the memory on the bitlines without writing the first bit pattern into memory cells of the memory; latching the first bit pattern; providing a second bit pattern to the bitlines of the memory; writing the second bit pattern into predetermined memory cells of the memory; reading the second bit pattern from the predetermined memory cells of the memory; and, comparing the first and second bit patterns.
Claim 7
Independent Claim
97 words
A method for testing a memory in an integrated circuit where the memory includes a plurality of bitlines and memory cells comprising the steps of: passing a first bit pattern through the memory on the bitlines without writing the first bit pattern into memory cells of the memory; latching the first bit pattern; providing a second bit pattern to the bitlines of the memory; writing the second bit pattern into predetermined memory cells of the memory; reading the second bit pattern from the predetermined memory cells of the memory; and, comparing the first and second bit patterns.
Claim 8
Dependent Claim
19 words
The method defined by claim 3 or 4 wherein the first and second bit patterns are the same pattern.
Claim 9
Dependent Claim
84 words
In an integrated circuit having a memory where the memory is tested by writing a first bit pattern into the memory and then by comparing the first bit pattern with a second bit pattern after the first bit pattern is read from the memory, an improvement for coupling the second bit pattern for comparison with the first bit pattern comprising the passing of the second bit pattern through bitlines of the memory without writing the second bit pattern into any cells of the memory.
Claim 10
Dependent Claim
84 words
In an integrated circuit having a memory where the memory is tested by writing a first bit pattern into the memory and then by comparing the first bit pattern with a second bit pattern after the first bit pattern is read from the memory, an improvement for coupling the second bit pattern for comparison with the first bit pattern comprising the passing of the second bit pattern through bitlines of the memory without writing the second bit pattern into any cells of the memory.
Claim 11
Dependent Claim
17 words
The improvement defined by claim 6 wherein the first and second bit patterns are the same pattern.
Claim 12
Dependent Claim
83 words
In an integrated circuit where a random access memory has input lines and separate output lines, the input and output lines being generally coupled through at least bitlines which communicate with memory cells of the memory, a method for testing the memory comprising: reading a first bit pattern from the memory cells; passing a second bit pattern from the input lines to the output lines without writing the second bit pattern into the memory cells; and, comparing the first and second bit patterns.
Claim 13
Dependent Claim
83 words
In an integrated circuit where a random access memory has input lines and separate output lines, the input and output lines being generally coupled through at least bitlines which communicate with memory cells of the memory, a method for testing the memory comprising: reading a first bit pattern from the memory cells; passing a second bit pattern from the input lines to the output lines without writing the second bit pattern into the memory cells; and, comparing the first and second bit patterns.
Claim 14
Dependent Claim
16 words
The method defined by claim 8 wherein the first and second patterns are the same pattern.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-01-07 | 2000-07-08 | 2001-01-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-01-07 | 2004-07-08 | 2005-01-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-01-07 | 2008-07-08 | 2009-01-07 | $7700.00 | Window Closed / Lapsed |