Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
141 words
A magnetoresistive sensor comprising: a substrate; and a multilayer stack of alternating ferromagnetic layers and nonferromagnetic metal spacer layers formed on the substrate, the stack having at least three of the ferromagnetic layers, wherein each of the ferromagnetic layers is antiferromagnetically coupled to a neighboring ferromagnetic layer across an adjacent spacer layer and has its magnetization aligned antiparallel to the magnetization of a neighboring ferromagnetic layer in the absence of an external magnetic field, and wherein each of the ferromagnetic layers exhibits substantially uniaxial magnetic anisotropy and has its magnetization switchable from said antiparallel alignment to parallel alignment at an external magnetic field strength that is different from the magnetic field strength at which the magnetizations of the other ferromagnetic layers are switchable; whereby the sensor exhibits discrete steps of decreasing electrical resistance in response to an increasing external magnetic field.
Claim 2
Dependent Claim
141 words
A magnetoresistive sensor comprising: a substrate; and a multilayer stack of alternating ferromagnetic layers and nonferromagnetic metal spacer layers formed on the substrate, the stack having at least three of the ferromagnetic layers, wherein each of the ferromagnetic layers is antiferromagnetically coupled to a neighboring ferromagnetic layer across an adjacent spacer layer and has its magnetization aligned antiparallel to the magnetization of a neighboring ferromagnetic layer in the absence of an external magnetic field, and wherein each of the ferromagnetic layers exhibits substantially uniaxial magnetic anisotropy and has its magnetization switchable from said antiparallel alignment to parallel alignment at an external magnetic field strength that is different from the magnetic field strength at which the magnetizations of the other ferromagnetic layers are switchable; whereby the sensor exhibits discrete steps of decreasing electrical resistance in response to an increasing external magnetic field.
Claim 3
Dependent Claim
23 words
A magnetoresistive sensor as in claim 1 wherein the substrate has an essentially 110 crystalline face onto which the multilayer stack is formed.
Claim 4
Dependent Claim
12 words
A magnetoresistive sensor as in claim 2 wherein the substrate is MgO.
Claim 5
Dependent Claim
24 words
A magnetoresistive sensor as in claim 1 further comprising a seed layer formed directly on the substrate between the substrate and the multilayer stack.
Claim 6
Dependent Claim
34 words
A magnetoresistive sensor as in claim 4 wherein the seed layer comprises a first film of iron formed directly on the substrate and a second film of platinum formed directly on the iron film.
Claim 7
Dependent Claim
15 words
A magnetoresistive sensor as in claim 1 wherein the ferromagnetic layers consist essentially of permalloy.
Claim 8
Dependent Claim
15 words
A magnetoresistive sensor as in claim 1 wherein the spacer layers consist essentially of copper.
Claim 9
Dependent Claim
27 words
A magnetoresistive sensor as in claim 1 wherein each of the ferromagnetic layers has a magnetic anisotropy different from the magnetic anisotropies of the other ferromagnetic layers.
Claim 10
Dependent Claim
36 words
A magnetoresistive sensor as in claim 1 wherein the antiferromagnetic coupling field strength of any pair of neighboring ferromagnetic layers is different from the antiferromagnetic coupling field strength of all other pairs of neighboring ferromagnetic layers.
Claim 11
Dependent Claim
25 words
A magnetoresistive sensor as in claim 1 wherein each of the spacer layers has a thickness different from the thicknesses of the other spacer layers.
Claim 12
Dependent Claim
35 words
A magnetoresistive sensor as in claim 1 further comprising a bias layer in contact with the ferromagnetic layer nearest or farthest from the substrate for fixing the magnetization of said nearest or farthest ferromagnetic layer.
Claim 13
Dependent Claim
24 words
A magnetoresistive sensor as in claim 1 further comprising a sensing circuit for converting the electrical resistance of the sensor to a voltage signal.
Claim 14
Dependent Claim
186 words
A magnetoresistive sensor comprising: a substrate having an essentially single crystalline face; a seed layer formed on the crystalline face of the substrate: and a multilayer stack of alternating permalloy layers and copper spacer layers formed on the seed layer, the stack having at least three of the permalloy layers and two of the copper spacer layers with neighboring permalloy layers being antiferromagnetically coupled to one another across an intermediate copper spacer layer, wherein each of the permalloy layers has its magnetic moment aligned antiparallel to the magnetic moment of a neighboring permalloy layer in the absence of an external magnetic field, and wherein each of the permalloy layers has a substantially uniaxial magnetic anisotropy different from the magnetic anisotropies of the other permalloy layers; whereby the magnetic moment of each permalloy layer is switchable from said antiparallel alignment to parallel alignment at an external magnetic field strength that is different from the magnetic field strength at which the magnetic moments of the other permalloy layers are switchable, the sensor thereby exhibiting discrete steps of decreasing electrical resistance in response to an increasing external magnetic field.
Claim 15
Dependent Claim
186 words
A magnetoresistive sensor comprising: a substrate having an essentially single crystalline face; a seed layer formed on the crystalline face of the substrate: and a multilayer stack of alternating permalloy layers and copper spacer layers formed on the seed layer, the stack having at least three of the permalloy layers and two of the copper spacer layers with neighboring permalloy layers being antiferromagnetically coupled to one another across an intermediate copper spacer layer, wherein each of the permalloy layers has its magnetic moment aligned antiparallel to the magnetic moment of a neighboring permalloy layer in the absence of an external magnetic field, and wherein each of the permalloy layers has a substantially uniaxial magnetic anisotropy different from the magnetic anisotropies of the other permalloy layers; whereby the magnetic moment of each permalloy layer is switchable from said antiparallel alignment to parallel alignment at an external magnetic field strength that is different from the magnetic field strength at which the magnetic moments of the other permalloy layers are switchable, the sensor thereby exhibiting discrete steps of decreasing electrical resistance in response to an increasing external magnetic field.
Claim 16
Dependent Claim
15 words
A magnetoresistive sensor as in claim 13 wherein the substrate has a 110 crystalline face.
Claim 17
Dependent Claim
12 words
A magnetoresistive sensor as in claim 14 wherein the substrate is MgO.
Claim 18
Dependent Claim
34 words
A magnetoresistive sensor as in claim 13 wherein the seed layer comprises a first film of iron formed directly on the substrate and a second film of platinum formed directly on the iron film.
Claim 19
Dependent Claim
36 words
A magnetoresistive sensor as in claim 13 further comprising a bias layer in contact with the ferromagnetic layer either nearest or farthest from the substrate for fixing the magnetization of said nearest or farthest ferromagnetic layer.
Claim 20
Dependent Claim
24 words
A magnetoresistive sensor as in claim 13 further comprising a sensing circuit for converting the electrical resistance of the sensor to a voltage signal.