US5585957A
Expired / Lapsed
US
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Method for producing various semiconductor optical devices of differing optical characteristics
Assignee: NTT Inc
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Filing: 1994-03-23
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Granted: 1996-12-17
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Expires: 2014-03-23
Abstract
Abstract An optical functional device includes a semiconductor substrate, an optical functional layer provided on said semiconductor substrate and selected from the group consisting of a light emitting layer, a light absorbing layer, and an optical waveguide layer. The optical functional layer has a multi-quantum well layer. Preferably, the semiconductor substrate is a nonplanar semiconductor substrate having a ridge and two grooves adjacent said ridge, said ridge having a ridge width of from 1 to 10 μm, a ridge height of from 1 μm to 5 μm, and a gap distance of from 1 μm to 10 μm. Such an optical functional device can be fabricated by growing, on a nonplanar semiconductor substrate having a specified dimension of the ridge, a strained multi-quantum well layer by metalorganic vapor phase epitaxy. Integrated optical device or circuit preferably includes an optical functional device on the nonplanar semiconductor substrate of a specified range of ridge shape factors. An integrated optical device can be fabricated by combination of a plurality of optical functional devices having slightly different compositions and including a part of a strained multi-quantum well layer monolithically grown on a nonplanar semiconductor substrate.
Inventors
- 👤 Masashi Nakao
- 👤 Yasuhiro Kondou
- 👤 Masanobu Okayasu
- 👤 Mitsuru Naganuma
- 👤 Yasuhiro Suzuki
- 👤 Masahiro Yuda
- 👤 Osamu Mitomi
- 👤 Kazuo Kasaya
- 👤 Junichi Nakano
- 👤 Kiyoyuki Yokoyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 20:45
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812; B; B82; B82Y; B82Y20/00; G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/12004; G02B6/122; G02B6/1228; G02B6/13; G02B6/131; G02B6/24; G02B6/42; H01; H01S; H01S5/00; H01S5/06; H01S5/062; H01S5/0625; H01S5/06255; H01S5/10; H01S5/12; H01S5/20; H01S5/22; H01S5/227; H01S5/30; H01S5/34; H10F; H10F71/00; H10F71/127; H10F71/1272; H10F77/00; H10F77/10; H10F77/14; H10F77/146; H10H20/01; H10H20/011; H10H20/013; G02B2006/12083; G02B2006/12107; G02B2006/12128; H01S2304/00; H01S2304/04; H01S5/02; H01S5/0206; H01S5/0207; H01S5/026; H01S5/0262; H01S5/0264; H01S5/1053; H01S5/1057; H01S5/106; H01S5/1064; H01S5/2054; H01S5/2077; H01S5/2275; H01S5/2277; H01S5/32; H01S5/3202; H01S5/3203; H01S5/3403; H01S5/343; H01S5/34306; H01S5/34313; H01S5/40; H01S5/4025; H01S5/4031; H01S5/4087; H01S5/50; H01S5/5027; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
75 words
A method for fabricating an optical device, comprising the steps of: providing a nonplanar semiconductor substrate having a ridge of which a ridge width is from 1 μm to 10 μm, a ridge height is from 1 μm to 5 μm, and a gap distance is from 1 μm to 10 μm; and growing a strained multi-quantum well layer on said nonplanar semiconductor substrate by metalorganic vapor phase epitaxy to form an functional optical layer.
Claim 2
Independent Claim
75 words
A method for fabricating an optical device, comprising the steps of: providing a nonplanar semiconductor substrate having a ridge of which a ridge width is from 1 μm to 10 μm, a ridge height is from 1 μm to 5 μm, and a gap distance is from 1 μm to 10 μm; and growing a strained multi-quantum well layer on said nonplanar semiconductor substrate by metalorganic vapor phase epitaxy to form an functional optical layer.
Claim 3
Dependent Claim
72 words
The method for fabricating an optical device as claimed in claim 1, wherein the step of providing said nonplanar semiconductor substrate includes the steps of: providing a planar semiconductor substrate; forming a semiconductor protective thin film layer on said planar semiconductor substrate having a composition different from that of said planar semiconductor substrate; and processing said planar semiconductor substrate and said protective thin film layer to render said planar semiconductor substrate nonplanar.
Claim 4
Independent Claim
100 words
A method for controlling optical characteristics of an optical device, the method comprising the steps of: providing a nonplanar semiconductor substrate having a ridge of a selected shape of which a ridge width is from 1 μm to 10 μm, a ridge height is from 1 μm to 5 μm, and a gap distance is from 1 μm to 10 μm; growing a multi-quantum well structure on said nonplanar semiconductor substrate by metalorganic vapor phase epitaxy to form a functional optical layer; and varying a composition of said multiquantum well structure formed on said ridge to change optical characteristics thereof.
Claim 5
Independent Claim
100 words
A method for controlling optical characteristics of an optical device, the method comprising the steps of: providing a nonplanar semiconductor substrate having a ridge of a selected shape of which a ridge width is from 1 μm to 10 μm, a ridge height is from 1 μm to 5 μm, and a gap distance is from 1 μm to 10 μm; growing a multi-quantum well structure on said nonplanar semiconductor substrate by metalorganic vapor phase epitaxy to form a functional optical layer; and varying a composition of said multiquantum well structure formed on said ridge to change optical characteristics thereof.
Claim 6
Dependent Claim
76 words
The method for controlling optical characteristics of an optical device as claimed in claim 3, wherein said functional optical layer is an optical waveguide layer, and wherein: said composition varying step includes varying at least one of said ridge width, ridge height and gap distance from one end toward another end of said ridge on which said optical waveguide layer is formed to vary one of bandgap and refractive index characteristics of said optical waveguide layer.
Claim 7
Dependent Claim
72 words
The method for controlling optical characteristics of an optical device as claimed in claim 3, wherein said optical characteristics comprise one of light emitting characteristics and detecting characteristics of said optical device; and wherein at least one of said ridge width, ridge height and gap distance is varied in a longitudinal direction of said ridge, so that said light emitting characteristics and said detecting characteristics of said optical device can be varied.
Claim 8
Dependent Claim
97 words
The method for controlling optical characteristics of an optical device as claimed in claim 3, wherein said providing step includes the step of providing a plurality of said ridges in parallel spaced relation, and wherein said optical characteristics comprise one of light emitting characteristics and light detecting characteristics of said optical device; and wherein at least one of said ridge width, ridge height and gap distance is varied in a transverse direction to form an array-like optical functional device, so that one of light emitting characteristics and light detecting characteristics of said optical device can be varied.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-17 | 2000-06-17 | 2000-12-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-17 | 2004-06-17 | 2004-12-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-17 | 2008-06-17 | 2008-12-17 | $7700.00 | Window Closed / Lapsed |