Patent US5585280A successfully refreshed from Google Patents.
US5585280A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating solid state radiation imager with high integrity barrier layer
Assignee: General Electric Co
•
Filing: 1995-06-02
•
Granted: 1996-12-17
•
Expires: 2015-06-02
Abstract
Abstract A radiation imager includes a photosensor barrier layer disposed between an amorphous silicon photosensor array and the scintillator. The barrier layer includes two strata, the first stratum being silicon oxide disposed over the upper conductive layer of the photosensor array and the second stratum is silicon nitride that is disposed over the first stratum. The photosensor barrier layer has a shape that substantially conforms to the the shape of the underlying upper conductive layer and has a maximum thickness of about 3 microns. The silicon oxide and silicon nitride are deposited in a vapor deposition process at less than about 250 DEG C. using tetraethoxysilane (TEOS) as the silicon source gas.
Inventors
- 👤 Robert F. Kwasnick
- 👤 Ching-Yeu Wei
- 👤 Jack D. Kingsley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 20:18
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/30; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/223; H10F30/2235; H10F77/40; H10F77/496
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
152 words
A method of fabricating a robust photosensor array moisture barrier in an amorphous silicon imager, comprising the steps of: forming a photosensor array on a substrate, the photosensor array comprising a plurality of photosensitive bodies and an upper conductive layer deposited over said photosensitive bodies; and depositing an array barrier layer on said upper conductive layer so as to cover said photosensor array, said array barrier layer having a maximum thickness of less than 3 μm and being disposed so as to substantially conform to the shape of said upper conductive layer; the step of depositing said array barrier layer comprising the steps of forming a first stratum comprising silicon oxide disposed on said upper conductive layer, said silicon oxide being deposited at a temperature less than about 250° C., and forming a second stratum comprising silicon nitride over said first stratum, and depositing a scintillator material over said array barrier layer.
Claim 2
Independent Claim
152 words
A method of fabricating a robust photosensor array moisture barrier in an amorphous silicon imager, comprising the steps of: forming a photosensor array on a substrate, the photosensor array comprising a plurality of photosensitive bodies and an upper conductive layer deposited over said photosensitive bodies; and depositing an array barrier layer on said upper conductive layer so as to cover said photosensor array, said array barrier layer having a maximum thickness of less than 3 μm and being disposed so as to substantially conform to the shape of said upper conductive layer; the step of depositing said array barrier layer comprising the steps of forming a first stratum comprising silicon oxide disposed on said upper conductive layer, said silicon oxide being deposited at a temperature less than about 250° C., and forming a second stratum comprising silicon nitride over said first stratum, and depositing a scintillator material over said array barrier layer.
Claim 3
Dependent Claim
30 words
The method of claim 1 wherein the step of forming said first stratum further comprises the step of applying said silicon oxide using tetraethoxysilane (TEOS) as the silicon source gas.
Claim 4
Dependent Claim
30 words
The method of claim 2 wherein the step of forming said second stratum further comprises the step of applying said silicon nitride in a plasma enhanced chemical vapor deposition process.
Claim 5
Dependent Claim
29 words
The method of claim 2 wherein said first stratum is deposited such that said silicon oxide has a thickness in the range between about 0.5 μm and 1.5 μm.
Claim 6
Dependent Claim
29 words
The method of claim 4 wherein said second stratum is deposited such that said silicon nitride has a thickness in the range between about 0.05 μm and 0.15 μm.
Claim 7
Dependent Claim
61 words
The method of claim 3 wherein the step of forming an array of photosensor further comprises the steps of: forming a plurality of amorphous silicon photosensitive bodies; forming a passivation layer over said plurality of photosensitive bodies, said passivation layer comprising an inorganic moisture barrier layer and an organic dielectric layer; and depositing said upper conductive layer over said passivation layer.
References Cited (Backward Citations)
JPS55129782A
Cited
JPS59122988A
Cited
US4906850A
Cited
EP0257678A1
Cited
US4924282A
Cited
DE3829912A1
Cited
JPH01131496A
Cited
US5101285A
Cited
WO1992006501A2
Cited
US5153438A
Cited
US5187369A
Cited
JPH05152210A
Cited
US5254480A
Cited
US5233181A
Cited
US5401668A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-17 | 2000-06-17 | 2000-12-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-17 | 2004-06-17 | 2004-12-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-17 | 2008-06-17 | 2008-12-17 | $7700.00 | Window Closed / Lapsed |