Arc control and switching element protection for pulsed dc cathode sputtering power supply

Claim 2

A pulsed dc sputtering process wherein a target material is sputtered from a conductive target in a plasma chamber and the sputtered material is deposited on a substrate in the chamber, comprising the steps of applying a dc voltage between said target and an anode in said chamber at a level that causes noble gas ions present in said chamber to impinge on the target to sputter away atoms of said target material, including applying a pulse waveform to said target at a predetermined rate, each cycle of which includes a negative voltage portion at a predetermined negative level relative to said anode and a predetermined first pulse width, and a positive voltage level relative to said anode and a predetermined second pulse width; sensing the applied voltage between said target and anode for overvoltage, and if said applied voltage exceeds a predetermined negative overvoltage threshold during said negative voltage portion over a predetermined plurality of successive cycles, then automatically interrupting said dc voltage; and sensing the applied voltage between said target and anode for arcing at a predetermined window interval during each said negative pulse portion, and if said applied voltage is in a range of voltages characteristic of arcing in said window interval over a predetermined plurality of successive cycles, then automatically interrupting said dc voltage.

Claim 3

The pulsed dc sputtering process according to claim 1, wherein said step of sensing the applied voltage for overvoltage includes clamping said applied voltage at said overvoltage threshold when said applied voltage reaches or exceeds said threshold.

Claim 4

The pulsed dc sputtering process according to claim 1, wherein for said step of sensing the applied voltage for overvoltage, said predetermined plurality of cycles is two cycles in succession.

Claim 5

The pulsed dc sputtering process according to claim 1, wherein for said step of sensing the applied voltage for arcing, said predetermined plurality of cycles is two cycles in succession.

Claim 6

A dc plasma arrangement for dc sputtering wherein a plasma chamber houses an anode, means for mounting a substrate, and a target, and target material is sputtered from said target and is deposited on a said substrate, comprising a pulsed dc power supply applying to said target a negative voltage at a predetermined level that causes a plasma of noble gas ions in said chamber to impinge upon said target with sufficient energy to free said target material from said target such that the target material deposits itself on the substrate, including periodic reverse biasing means for applying said negative voltage to said target at said predetermined level for pulse intervals of a predetermined pulse duration and applying pulses of a positive voltage to said target relative to said anode between the occurrences of said negative voltage so that adjacent pulses of said negative voltage and said positive voltage define a cycle having a predetermined rate; overvoltage protection means for sensing the applied voltage between said target and anode and if said applied voltage exceeds a predetermined negative overvoltage threshold during said negative voltage portion over a predetermined plurality of successive cycles, then automatically interrupting said dc voltage; and arc elimination means for sensing the applied voltage between said target and anode for arcing at a predetermined window interval during each said negative pulse portion, and if said applied voltage is in a range of voltages characteristic of arcing in said window interval over a predetermined plurality of successive cycles, then automatically interrupting said dc voltage and applying a reverse bias voltage to said target for an extended period.

Claim 7

A dc plasma arrangement for dc sputtering wherein a plasma chamber houses an anode, means for mounting a substrate, and a target, and target material is sputtered from said target and is deposited on a said substrate, comprising a pulsed dc power supply applying to said target a negative voltage at a predetermined level that causes a plasma of noble gas ions in said chamber to impinge upon said target with sufficient energy to free said target material from said target such that the target material deposits itself on the substrate, including periodic reverse biasing means for applying said negative voltage to said target at said predetermined level for pulse intervals of a predetermined pulse duration and applying pulses of a positive voltage to said target relative to said anode between the occurrences of said negative voltage so that adjacent pulses of said negative voltage and said positive voltage define a cycle having a predetermined rate; overvoltage protection means for sensing the applied voltage between said target and anode and if said applied voltage exceeds a predetermined negative overvoltage threshold during said negative voltage portion over a predetermined plurality of successive cycles, then automatically interrupting said dc voltage; and arc elimination means for sensing the applied voltage between said target and anode for arcing at a predetermined window interval during each said negative pulse portion, and if said applied voltage is in a range of voltages characteristic of arcing in said window interval over a predetermined plurality of successive cycles, then automatically interrupting said dc voltage and applying a reverse bias voltage to said target for an extended period.

Claim 8

The dc plasma arrangement according to claim 5, wherein said overvoltage protection means includes clamping means for clamping said applied voltage at said overvoltage threshold when said applied voltage reaches or exceeds said threshold.

Claim 9

The dc plasma arrangement according to claim 6, wherein said overvoltage protection means includes a series stack of zener diodes connected between the output terminals of said pulsed dc power supply.

Claim 10

The dc plasma arrangement according to claim 7, wherein said overvoltage protection means includes an opto transmitter coupled between said stack of zener diodes and a current sink, an opto receiver optically coupled to said transmitter, and circuit means actuated by said opto receiver to interrupt said dc power supply when said opto receiver indicates an overvoltage for said plurality of successive cycles.

Claim 11

The dc plasma arrangement according to claim 5, wherein said arc elimination means includes a voltage comparator having an output and inputs coupled to an output of said dc power supply and to a reference voltage source, an opto transmitter driven by the output of said comparator, an opto receiver optically coupled to said transmitter, window timer means for generating a window signal during the predetermined window interval of each said negative pulse portion of each cycle, logic means coupled to said opto receiver and said window timer means for detecting whether said characteristic voltage is present during said window interval for said predetermined plurality of cycles, and interrupter means coupled to said logic means for interrupting said dc power supply when said characteristic voltage is present during said window interval for said predetermined plurality of cycles.