US5583078A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating a planar dielectric
Assignee: Nokia of America Corp
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Filing: 1995-06-06
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Granted: 1996-12-10
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Expires: 2015-06-06
Abstract
Abstract Re-entrant angles in doped dielectrics produced from the decomposition of organo-silicon compounds are reduced or eliminated by the addition of a polar molecule to the dielectric deposition process.
Inventors
- 👤 John W. Osenbach
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 15:28
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/662; H10P14/668; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10P14/6923
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
105 words
A method of integrated circuit manufacturing comprising the steps of forming features on a surface of a substrate; and, depositing a first layer of silicon dioxide over said features, said depositing comprising the steps of decomposing an organo-silicon precursor gas to yield a silicon containing component, and directing said component together with at least one flow temperature reducing dopant and at least one polar molecule to said features on said surface of said substrate, said polar molecule being selected from the group consisting of NH 3 and N 2 O, the flow rate of said polar molecule being selected to produce an essentially conformal layer.
Claim 2
Independent Claim
105 words
A method of integrated circuit manufacturing comprising the steps of forming features on a surface of a substrate; and, depositing a first layer of silicon dioxide over said features, said depositing comprising the steps of decomposing an organo-silicon precursor gas to yield a silicon containing component, and directing said component together with at least one flow temperature reducing dopant and at least one polar molecule to said features on said surface of said substrate, said polar molecule being selected from the group consisting of NH 3 and N 2 O, the flow rate of said polar molecule being selected to produce an essentially conformal layer.
Claim 3
Dependent Claim
47 words
A method as recited in claim 1 comprising the further step of depositing a second layer of silicon dioxide by decomposing an organo-silicon precursor gas to yield a silicon-containing component, and directing said component together with at least one polar molecule to said features on said substrate.
Claim 4
Dependent Claim
28 words
A method as recited in claim 1 in which said the precursor gas comprises at least one member selected from the group consisting of TEOS, TOMCATS, and DES.
Claim 5
Dependent Claim
26 words
A method as recited in claim 1 in which said dopant is at least one member selected from the group consisting as P, B, and As.
Claim 6
Dependent Claim
26 words
A method as recited in claim 4 in which said deposition is continued until spaces between features have been substantially filled and a planar surface produced.
Claim 7
Independent Claim
84 words
A method of integrated circuit manufacturing comprising the steps of forming features on a surface of a substrate; and, depositing a first layer of silicon dioxide over said features, said depositing comprising the steps of decomposing an organo-silicon precursor gas to yield a silicon containing component, and directing said component together with at least one flow temperature reducing dopant and one polar molecule selected from the group consisting of NH 3 and N 2 O, to said features on said surface of said substrate.
Claim 8
Independent Claim
84 words
A method of integrated circuit manufacturing comprising the steps of forming features on a surface of a substrate; and, depositing a first layer of silicon dioxide over said features, said depositing comprising the steps of decomposing an organo-silicon precursor gas to yield a silicon containing component, and directing said component together with at least one flow temperature reducing dopant and one polar molecule selected from the group consisting of NH 3 and N 2 O, to said features on said surface of said substrate.
Claim 9
Dependent Claim
28 words
A method as recited in claim 6 in which said the precursor gas comprises at least one member selected from the group consisting of TEOS, TOMCATS, and DES.
Claim 10
Dependent Claim
26 words
A method as recited in claim 7 in which said dopant is at least one member selected from the group consisting as P, B, and As.
References Cited (Backward Citations)
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Cited
EP0232748A1
Cited
JPS6362238A
Cited
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Cited
JPH02218131A
Cited
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-10 | 2000-06-10 | 2000-12-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-10 | 2004-06-10 | 2004-12-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-10 | 2008-06-10 | 2008-12-10 | $7700.00 | Window Closed / Lapsed |