US5583069A
Expired / Lapsed
US
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Method for making a fine annular charge storage electrode in a semiconductor device using a phase-shift mask
Assignee: SK Hynix Inc
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Filing: 1995-07-07
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Granted: 1996-12-10
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Expires: 2015-07-07
Abstract
Abstract The present invention provides a method for making a fine annular charge storage electrode in a semiconductor device, which is capable of easily forming the charge storage electrode having a double cylinder-shaped structure and a fine annular pattern which is smaller than the wavelength from the light source, using a phase-shift mask. Accordingly, the present invention has an effect in that the reliability of a memory device having the charge storage electrode is improved, by removing the bad contact in the double cylinder-shaped structure, and that the surface of the charge storage electrode can be easily increased from 20% to 80%.
Inventors
- 👤 Chang N. Ahn
- 👤 Ik B. Hur
- 👤 Hung E. Kim
- 👤 Seung C. Moon
- 👤 Il H. Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:57
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/042; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/716; Y; Y10; Y10S; Y10S148/00; Y10S148/106; Y10S438/00; Y10S438/942; Y10S438/948
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
194 words
A method for forming a charge storage electrode in a memory device, comprising the steps of: depositing a first insulating layer on a substrate having an active region; etching said first insulating layer in order to form a contact hole, thereby exposing said active region; forming a first conducting layer being in contact with the active region through the contact hole; depositing a second insulating layer on said first conducting layer for planarization; depositing a photoresist layer on said second insulating layer; exposing said photoresist layer using a phase-shift mask which has a phase-shift material pattern whose width is wider than a wavelength of an exposure light, thereby developing a fine annular photoresist pattern for forming said charge storage electrode having a fine annular pattern which is smaller than said wavelength of said exposure light; etching said second insulating layer and said first conducting layer, using said fine annular photoresist pattern as an etching mask; removing said fine annular photoresist pattern; depositing a second conducting layer on said substrate after said etching said second insulating layer and said first conducting layer; isotopically etching said second conducting layer; and removing said etched second insulating layer.
Claim 2
Independent Claim
194 words
A method for forming a charge storage electrode in a memory device, comprising the steps of: depositing a first insulating layer on a substrate having an active region; etching said first insulating layer in order to form a contact hole, thereby exposing said active region; forming a first conducting layer being in contact with the active region through the contact hole; depositing a second insulating layer on said first conducting layer for planarization; depositing a photoresist layer on said second insulating layer; exposing said photoresist layer using a phase-shift mask which has a phase-shift material pattern whose width is wider than a wavelength of an exposure light, thereby developing a fine annular photoresist pattern for forming said charge storage electrode having a fine annular pattern which is smaller than said wavelength of said exposure light; etching said second insulating layer and said first conducting layer, using said fine annular photoresist pattern as an etching mask; removing said fine annular photoresist pattern; depositing a second conducting layer on said substrate after said etching said second insulating layer and said first conducting layer; isotopically etching said second conducting layer; and removing said etched second insulating layer.
Claim 3
Dependent Claim
31 words
A method in accordance with claim 1, wherein the step of removing said etched second insulating layer further comprises a step of removing an upper portion of said first insulating layer.
Claim 4
Dependent Claim
31 words
A method in accordance with claim 1, wherein a thickness of a layer of said phase-shift material pattern is approximately 1/2(n-1), (where, n is a refractive index of a phase-shift material).
Claim 5
Dependent Claim
16 words
A method in accordance with claim 1, wherein said phase-shift material pattern comprises of inorganic substances.
Claim 6
Dependent Claim
16 words
A method in accordance with claim 1, wherein said phase-shift material pattern comprises of organic substances.
Claim 7
Independent Claim
193 words
A method for forming a charge storage electrode in a memory device, comprising the steps of: depositing a first insulating layer on a substrate having an active region; etching said first insulating layer in order to form a contact hole, thereby exposing said active region; forming a first conducting layer being in contact with the active region through the contact hole; depositing a second insulating layer on said first conducting layer for planarization; depositing a photoresist layer on said second insulating layer; exposing said photoresist layer using a phase-shift mask which has an etched portion whose width is wider than a wavelength of an exposure light, thereby developing a fine annular photoresist pattern for forming said charge storage electrode having a fine annular pattern which is smaller than said wavelength of said exposure light; etching said second insulating layer and said first conducting layer, using said fine annular photoresist pattern as an etching mask; removing said fine annular photoresist pattern; depositing a second conducting layer on said substrate after said etching said second insulating layer and said first conducting layer; isotopically etching said second conducting layer; and removing said etched second insulating layer.
Claim 8
Independent Claim
193 words
A method for forming a charge storage electrode in a memory device, comprising the steps of: depositing a first insulating layer on a substrate having an active region; etching said first insulating layer in order to form a contact hole, thereby exposing said active region; forming a first conducting layer being in contact with the active region through the contact hole; depositing a second insulating layer on said first conducting layer for planarization; depositing a photoresist layer on said second insulating layer; exposing said photoresist layer using a phase-shift mask which has an etched portion whose width is wider than a wavelength of an exposure light, thereby developing a fine annular photoresist pattern for forming said charge storage electrode having a fine annular pattern which is smaller than said wavelength of said exposure light; etching said second insulating layer and said first conducting layer, using said fine annular photoresist pattern as an etching mask; removing said fine annular photoresist pattern; depositing a second conducting layer on said substrate after said etching said second insulating layer and said first conducting layer; isotopically etching said second conducting layer; and removing said etched second insulating layer.
Claim 9
Dependent Claim
31 words
A method in accordance with claim 6, wherein the step of removing said etched second insulating layer further comprises a step of removing an upper portion of said first insulating layer.
Claim 10
Dependent Claim
34 words
A method in accordance with claim 6, wherein the phase-shift mask is coated with a phase-shift material pattern having a thickness of approximately 1/2(n-1) (where n is a refractive index of a phase-shift material).
Claim 11
Dependent Claim
15 words
A method in accordance with claim 8, wherein said phase-shift material pattern comprises inorganic substances.
Claim 12
Dependent Claim
15 words
A method in accordance with claim 8, wherein said phase-shift material pattern comprises organic substances.
Claim 13
Independent Claim
215 words
A method for forming a charge storage electrode in a memory device, comprising the steps of: depositing a first insulating layer on a substrate having an active region; etching said first insulating layer in order to form a contact hole, thereby exposing said active region; forming a first conducting layer being in contact with the active region through the contact hole; depositing a second insulating layer on said first conducting layer for planarization; depositing a photoresist layer on said second insulating layer; exposing said photoresist layer using a phase-shift mask, which has a phase-shift material pattern whose width is wider than a wavelength of an exposure light and which, from said phase-shift material pattern, a projecting part whose width is narrower than the wavelength of the exposure light, thereby developing a fine annular photoresist pattern for forming said charge storage electrode having a fine annular pattern which is smaller than said wavelength of said exposure light; etching said second insulating layer and said first conducting layer, using said fine annular photoresist pattern as an etching mask; removing said fine annular photoresist pattern; depositing a second conducting layer on said substrate after said etching said second insulating layer and said first conducting layer; isotopically etching said second conducting layer; and removing said etched second insulating layer.
Claim 14
Independent Claim
215 words
A method for forming a charge storage electrode in a memory device, comprising the steps of: depositing a first insulating layer on a substrate having an active region; etching said first insulating layer in order to form a contact hole, thereby exposing said active region; forming a first conducting layer being in contact with the active region through the contact hole; depositing a second insulating layer on said first conducting layer for planarization; depositing a photoresist layer on said second insulating layer; exposing said photoresist layer using a phase-shift mask, which has a phase-shift material pattern whose width is wider than a wavelength of an exposure light and which, from said phase-shift material pattern, a projecting part whose width is narrower than the wavelength of the exposure light, thereby developing a fine annular photoresist pattern for forming said charge storage electrode having a fine annular pattern which is smaller than said wavelength of said exposure light; etching said second insulating layer and said first conducting layer, using said fine annular photoresist pattern as an etching mask; removing said fine annular photoresist pattern; depositing a second conducting layer on said substrate after said etching said second insulating layer and said first conducting layer; isotopically etching said second conducting layer; and removing said etched second insulating layer.
Claim 15
Dependent Claim
31 words
A method in accordance with claim 11, wherein the step of removing said etched second insulating layer further comprises a step of removing an upper portion of said first insulating layer.
Claim 16
Dependent Claim
30 words
A method in accordance with claim 11, wherein thickness of a layer of said phase-shift material pattern is approximately 1/2(n-1), (where, n is a refractive index of a phase-shift material).
Claim 17
Dependent Claim
16 words
A method in accordance with claim 11, wherein said phase-shift material pattern comprises of inorganic substances.
Claim 18
Dependent Claim
16 words
A method in accordance with claim 11, wherein said phase-shift material pattern comprises of organic substances.
Claim 19
Independent Claim
213 words
A method for forming a charge storage electrode in a memory device, comprising the steps of: depositing a first insulating layer on a substrate having an active region; etching said first insulating layer in order to form a contact hole, thereby exposing said active region; forming a first conducting layer being in contact with the active region through the contact hole; depositing a second insulating layer on said first conducting layer for planarization; depositing a photoresist layer on said second insulating layer; exposing said photoresist layer using a phase-shift mask, which has an etched portion whose width is wider than a wavelength of an exposure light and which, from said etched portion, a projecting part whose width is narrower than the wavelength of said exposure light, thereby developing a fine annular photoresist pattern for forming said charge storage electrode having a fine annular pattern which is smaller than said wavelength of said exposure light; etching said second insulating layer and said first conducting layer, using said fine annular photoresist pattern as an etching mask; removing said fine annular photoresist pattern; depositing a second conducting layer on said substrate after said etching said second insulating layer and said first conducting layer; isotopically etching said second conducting layer; and removing said etched second insulating layer.
Claim 20
Independent Claim
213 words
A method for forming a charge storage electrode in a memory device, comprising the steps of: depositing a first insulating layer on a substrate having an active region; etching said first insulating layer in order to form a contact hole, thereby exposing said active region; forming a first conducting layer being in contact with the active region through the contact hole; depositing a second insulating layer on said first conducting layer for planarization; depositing a photoresist layer on said second insulating layer; exposing said photoresist layer using a phase-shift mask, which has an etched portion whose width is wider than a wavelength of an exposure light and which, from said etched portion, a projecting part whose width is narrower than the wavelength of said exposure light, thereby developing a fine annular photoresist pattern for forming said charge storage electrode having a fine annular pattern which is smaller than said wavelength of said exposure light; etching said second insulating layer and said first conducting layer, using said fine annular photoresist pattern as an etching mask; removing said fine annular photoresist pattern; depositing a second conducting layer on said substrate after said etching said second insulating layer and said first conducting layer; isotopically etching said second conducting layer; and removing said etched second insulating layer.
Claim 21
Dependent Claim
31 words
A method in accordance with claim 16, wherein the step of removing said etched second insulating layer further comprises a step of removing an upper portion of said first insulating layer.
Claim 22
Dependent Claim
34 words
A method in accordance with claim 16, wherein the phase-shift mask is coated with a phase-shift material pattern having a thickness of approximately 1/2(n-1), (where, n is a refractive index of a phase-shift material).
Claim 23
Dependent Claim
15 words
A method in accordance with claim 18, wherein said phase-shift material pattern comprises inorganic substances.
Claim 24
Dependent Claim
15 words
A method in accordance with claim 18, wherein said phase-shift material pattern comprises organic substances.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1999-12-10 | 2000-06-10 | 2000-12-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-10 | 2004-06-10 | 2004-12-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-10 | 2008-06-10 | 2008-12-10 | $7700.00 | Window Closed / Lapsed |