Semiconductor memory having sub-word line replacement

Claim 1

A semiconductor memory apparatus having a normal memory array which includes a plurality of memory blocks each comprised of a predetermined number of memory cells arranged in row and column directions and having a redundancy spare memory array which includes at least one memory block arranged in the row direction, comprising: (a) a plurality of normal main word lines for selecting normal memory block groups in said normal memory array, each group being comprised of a number of memory blocks in the row direction in said normal memory array, a plurality of normal word lines for selecting memory cells of each of said memory blocks in each group, at least one spare main word line for selecting said memory block in said redundancy spare memory array, and a plurality of spare word lines for selecting memory cells of said memory block in said redundancy spare memory array; (b) a normal decoder for selecting one of said plurality of normal main word lines on the basis of a first row address which is a divisional part of a row address, a spare decoder for selecting said spare main word line, and a main driver for delivering signals of said normal and spare main decoders; (c) a subdecoder for selecting one row from a plurality of rows of said memory blocks in said normal memory array on the basis of a second row address which is the remainder of said row address, and normal subdrivers for driving an output signal of said subdecoder; and (d) spare subdrivers for driving a spare word line of said memory block in said redundancy spare memory array on the basis of a signal of said spare decoder, said spare decoder being responsive to said first row address and a partial address of said second row address to send an inhibit signal to said main driver for driving a normal main word line in said normal memory array to inhibit selection operation when said first row and partial addresses represent an address of a defective cell row in said normal memory array and to select said spare main word line so as to select one cell from memory cells belonging to said memory block in said redundancy spare memory array.