Patent US5608558A successfully refreshed from Google Patents.
Patent US5580429A successfully refreshed from Google Patents.
US5580429A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for the deposition and modification of thin films using a combination of vacuum arcs and plasma immersion ion implantation
Assignee: Northeastern University
•
Filing: 1995-06-07
•
Granted: 1996-12-03
•
Expires: 2015-06-07
Abstract
Abstract Cathodic/anodic vacuum arc sources with plasma ion implantation deposition system for depositing high quality thin film coatings of complex compounds on a workpiece. Both cathodic and anodic vacuum arc deposition sources, CAVAD, are used to create a plasma vapor from solid materials composing the cathode and/or anode in the cathodic and/or anodic arc respectively. Gases, e.g., hydrogen or nitrogen can be in the deposited films by creating a background plasma of the desired gas using either RF energy, thermionic emission, or consequential ionization of the gas passing through the arc or around the substrate. Application of highly negative pulses to the substrate to extract the ions and provide them with the appropriate energy to interact with the other species in the thin film formation on the substrate to form the desired films. The substrate is bombarded with the ionized particles to form carbon nitrides with variable [N]/[C] ratios, referred to as CNx.
Inventors
- 👤 Chung Chan
- 👤 Ryne C. Allen
- 👤 Imad Husein
- 👤 Yaunzhong Zhou
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 06:30
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/24; C23C14/32; C23C14/325; H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32055
Claims Analysis
Total Claims: 45
Claim 1
Independent Claim
102 words
A method for depositing a CN x film on a substrate, comprising the step of: providing a vacuum chamber; providing a substrate positioned within said vacuum chamber; providing a consumable carbon-based anode and a cathode; ingiting an arc between said consumable carbon-based anode and said cathode to produce a partially ionized carbon vapor; depositing said partially ionized carbon vapor on said substrate to form a carbon film thereon; providing a nitrogen plasma; immersing said substrate deposited with said carbon film into said nitrogen plasma; and implanting said carbon film with nitrogen ions from said nitrogen plasma to form a CN x film.
Claim 2
Independent Claim
102 words
A method for depositing a CN x film on a substrate, comprising the step of: providing a vacuum chamber; providing a substrate positioned within said vacuum chamber; providing a consumable carbon-based anode and a cathode; ingiting an arc between said consumable carbon-based anode and said cathode to produce a partially ionized carbon vapor; depositing said partially ionized carbon vapor on said substrate to form a carbon film thereon; providing a nitrogen plasma; immersing said substrate deposited with said carbon film into said nitrogen plasma; and implanting said carbon film with nitrogen ions from said nitrogen plasma to form a CN x film.
Claim 3
Dependent Claim
18 words
The method of claim 1, wherein in said implanting step, said substrate is pulsed with a negative voltage.
Claim 4
Dependent Claim
19 words
The method of claim 2, wherein said negative voltage is in the range of approximately -50 to -2000 volts.
Claim 5
Dependent Claim
19 words
The method of claim 2, wherein the pulse time is in the range of approximately 3 to 10 μsec.
Claim 6
Dependent Claim
23 words
The method of claim 1, wherein in said implanting step, said nitrogen plasma is maintained at a pressure of approximately 10 -4 Torr.
Claim 7
Dependent Claim
12 words
The method of claim 1, wherein said substrate is made of silicon.
Claim 8
Dependent Claim
12 words
The method of claim 6, wherein said substrate is a silicon wafer.
Claim 9
Dependent Claim
13 words
The method of claim 1, wherein said substrate is a magnetic computer disk.
Claim 10
Dependent Claim
24 words
The method of claim 1, wherein said CN x film is formed to a thickness in the range of approximately 0.8 to 1.7 μm.
Claim 11
Dependent Claim
20 words
The method of claim 1, wherein the formation rate of said CN x film is approximately 0.5 μm per min.
Claim 12
Dependent Claim
15 words
The method of claim 1, wherein said partially ionized carbon vapor is approximately 20% ionized.
Claim 13
Dependent Claim
14 words
The method of claim 1, wherein said nitrogen plasma is produced by thermionic emission.
Claim 14
Dependent Claim
14 words
The method of claim 1, wherein said nitrogen plasma is produced by RF excitation.
Claim 15
Dependent Claim
17 words
The method of claim 1, wherein said nitrogen plasma is produced by the energy of said cathode.
Claim 16
Independent Claim
116 words
A method for depositing a CN x film on a substrate, comprising the steps of: providing a vacuum chamber with a curved magnetic duct, said vacuum chamber including nitrogen gas; providing a substrate positioned within said vacuum chamber; providing a cathode positioned at an end of said curved magnetic duct, said cathode comprising a carbon-based material; igniting a cathodic arc, said cathodic arc operating in a continuous mode and forming a carbon ion flux, said nitrogen gas forming a plasma; passing said carbon ion flux through said curved magnetic duct and onto said substrate; implanting said carbon ion flux and nitrogen ions from said nitrogen plasma onto said substrate to form a CN x film thereon.
Claim 17
Independent Claim
116 words
A method for depositing a CN x film on a substrate, comprising the steps of: providing a vacuum chamber with a curved magnetic duct, said vacuum chamber including nitrogen gas; providing a substrate positioned within said vacuum chamber; providing a cathode positioned at an end of said curved magnetic duct, said cathode comprising a carbon-based material; igniting a cathodic arc, said cathodic arc operating in a continuous mode and forming a carbon ion flux, said nitrogen gas forming a plasma; passing said carbon ion flux through said curved magnetic duct and onto said substrate; implanting said carbon ion flux and nitrogen ions from said nitrogen plasma onto said substrate to form a CN x film thereon.
Claim 18
Dependent Claim
17 words
The method of claim 15, wherein said carbon ion flux is a highly ionized carbon ion flux.
Claim 19
Dependent Claim
12 words
The method of claim 15, wherein said substrate is made of silicon.
Claim 20
Dependent Claim
12 words
The method of claim 17, wherein said substrate is a silicon wafer.
Claim 21
Dependent Claim
23 words
The method of claim 15, wherein said nitrogen gas in said vacuum chamber is maintained at a pressure of approximately 10 -4 Torr.
Claim 22
Dependent Claim
18 words
The method of claim 15, wherein in said implanting step, said substrate is pulsed with a negative voltage.
Claim 23
Dependent Claim
20 words
The method of claim 20, wherein said negative voltage is in the range of approximately -50 to approximately -2000 volts.
Claim 24
Dependent Claim
22 words
The method of claim 20, wherein the pulse time is in the range of from approximately 4 μsec to approximately 10 μsec.
Claim 25
Dependent Claim
23 words
The method of claim 20, wherein the frequency of said pulsing is in the range of from approximately 6 to approximately 14 Khz.
Claim 26
Dependent Claim
19 words
The method of claim 15, wherein said CN x film is formed to a thickness of approximately 0.8 μm.
Claim 27
Dependent Claim
20 words
The method of claim 15, wherein the formation rate of said CN x film is approximately 0.1 μm per min.
Claim 28
Dependent Claim
14 words
The method of claim 15, wherein said nitrogen plasma is produced by thermionic emission.
Claim 29
Dependent Claim
14 words
The method of claim 15, wherein said nitrogen plasma is produced by RF excitation.
Claim 30
Dependent Claim
18 words
The method of claim 15, wherein said nitrogen plasma is produced by the energy of said cathodic arc.
Claim 31
Independent Claim
113 words
A method for depositing a CN x film on a substrate, comprising the steps of: providing a vacuum chamber with a curved magnetic duct, said vacuum chamber including nitrogen gas; providing a substrate positioned within said vacuum chamber; providing a cathode positioned at an end of said curved magnetic duct, said cathode comprising a carbon-based material; igniting a cathodic arc, said cathodic arc operating in a pulsing mode and forming a carbon ion flux; providing a nitrogen plasma; passing said carbon ion flux through said curved magnetic duct and onto said substrate; implanting said carbon ion flux and nitrogen ions from said nitrogen plasma onto said substrate to form a CN x film.
Claim 32
Independent Claim
113 words
A method for depositing a CN x film on a substrate, comprising the steps of: providing a vacuum chamber with a curved magnetic duct, said vacuum chamber including nitrogen gas; providing a substrate positioned within said vacuum chamber; providing a cathode positioned at an end of said curved magnetic duct, said cathode comprising a carbon-based material; igniting a cathodic arc, said cathodic arc operating in a pulsing mode and forming a carbon ion flux; providing a nitrogen plasma; passing said carbon ion flux through said curved magnetic duct and onto said substrate; implanting said carbon ion flux and nitrogen ions from said nitrogen plasma onto said substrate to form a CN x film.
Claim 33
Dependent Claim
17 words
The method of claim 29, wherein said carbon ion flux is a highly ionized carbon ion flux.
Claim 34
Dependent Claim
12 words
The method of claim 29, wherein said substrate is made of silicon.
Claim 35
Dependent Claim
23 words
The method of claim 29, wherein said nitrogen gas in said vacuum chamber is maintained at a pressure of approximately 10 -4 Torr.
Claim 36
Dependent Claim
18 words
The method of claim 29, wherein in said implanting step, said substrate is pulsed with a negative voltage.
Claim 37
Dependent Claim
20 words
The method of claim 33, wherein said negative voltage is in the range of approximately -50 to approximately -2000 volts.
Claim 38
Dependent Claim
22 words
The method of claim 33, wherein the pulse time is in the range of from approximately 4 μsec to approximately 8 μsec.
Claim 39
Dependent Claim
23 words
The method of claim 33, wherein the frequency of said pulsing is in the range of approximately 6 Khz to approximately 14 Khz.
Claim 40
Dependent Claim
19 words
The method of claim 29, wherein said CN x film is formed to a thickness of approximately 1.0 μm.
Claim 41
Dependent Claim
28 words
The method of claim 29, wherein the pulse rate of said cathode operating in said pulsing mode are in the range of approximately 1 to 10 per second.
Claim 42
Dependent Claim
23 words
The method of claim 29, wherein the duration of the pulses of said cathode operating in said pulsing mode are approximately 1.5 msec.
Claim 43
Dependent Claim
14 words
The method of claim 29, wherein said nitrogen plasma is produced by thermionic emission.
Claim 44
Dependent Claim
14 words
The method of claim 29, wherein said nitrogen plasma is produced by RF excitation.
Claim 45
Dependent Claim
18 words
The method of claim 29, wherein said nitrogen plasma is produced by the energy of the cathodic arc.
References Cited (Backward Citations)
US3158805A
Cited
US4917786A
Cited
US5096558A
Cited
US4929322A
Cited
US5013578A
Cited
US5104509A
Cited
US5458754A
Cited
US5279723A
Cited
US5401543A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-03 | 2000-06-03 | 2000-12-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-03 | 2004-06-03 | 2004-12-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-03 | 2008-06-03 | 2008-12-03 | $7700.00 | Window Closed / Lapsed |