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US5578845A
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Dielectric thin film device with lead erbium zirconate titanate
Assignee: Sharp Corp
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Filing: 1994-06-22
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Granted: 1996-11-26
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Expires: 2014-06-22
Abstract
Abstract A dielectric thin film device is constructed by a dielectric thin film using lead erbium zirconate titanate represented by (Pb 1-y Er y ) (Zr x Ti 1-x )O 3 with 0<x<1 and 0<y<1. This dielectric thin film element has excellent electric characteristics of a leak electric current and fatigue characteristics, etc. The dielectric thin film element may have a thermally grown silicon dioxide film, a titanium film, a platinum lower electrode, a film of lead erbium zirconate titanate represented by (Pb 1-y Er y ) (Zr x Ti 1-x )O 3 and a platinum upper electrode. These films and electrodes are sequentially formed on an n-type silicon substrate. In this case, 0.45≦x≦0.75 and 0.05≦y≦0.1 are set. A method for manufacturing a dielectric thin film has the steps of coating a substrate with a precursor solution of erbium lead zirconate titanate represented by (Pb 1-y Er y ) (Zr x Ti 1-x )O 3 drying the coated solution at a high temperature to obtain a dry gel; and thermally treating the dry gel at a higher temperature to produce the dielectric thin film is constructed of the lead erbium zirconate titanate represented by (Pb 1-y Er y ) (Zr x Ti 1-x )O 3 with 0.45≦x≦0.8 and 0.005≦y≦0.1.
Inventors
- 👤 Yoshiyuki Masuda
- 👤 Yasushi Ogimoto
- 👤 Noboru Ootani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 12:11
CPC Classifications
G; G01; G01N; G01N29/00; G01N29/02; G01N29/022; C; C23; C23C; C23C18/00; C23C18/02; C23C18/12; C23C18/1204; C23C18/1208; C23C18/1216; C23C18/1225; H; H10; H10B; H10B53/00; H10N; H10N15/00; H10N15/10; H10N15/15; H10N30/00; H10N30/30; H10N30/302; G01N2291/00; G01N2291/04; G01N2291/042; G01N2291/0427
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
32 words
A dielectric thin film element comprising a dielectric thin film comprising lead erbium zirconate titanate represented by (Pb 1-y Er y ) (Zr x Ti 1-x )O 3 and 0<x<1 and 0<y<1.
Claim 2
Dependent Claim
32 words
A dielectric thin film element comprising a dielectric thin film comprising lead erbium zirconate titanate represented by (Pb 1-y Er y ) (Zr x Ti 1-x )O 3 and 0<x<1 and 0<y<1.
Claim 3
Dependent Claim
45 words
A dielectric thin film element as claimed in claim 1, wherein 0.45≦x≦0.8 and 0.005≦y≦0.05 are set with respect to said lead erbium zirconate titanate represented by (Pb 1-y Er y ) (Zr x Ti 1-x )O 3 , and said dielectric thin film shows ferroelectricity.
Claim 4
Dependent Claim
56 words
A dielectric thin film element as claimed in claim 1, wherein 0.45≦x≦0.75 and 0.05≦y≦0.1 are set with respect to said lead erbium zirconate titanate represented by (Pb 1-y Er y ) (Zr x Ti 1-x )O 3 , and said dielectric thin film has a dielectric constant higher than that of silicon oxide or silicon nitride.
Claim 5
Dependent Claim
58 words
A dielectric thin film element comprising a thermally grown silicon dioxide film, a titanium film, a platinum lower electrode, a film of erbium lead zirconate titanate represented by (Pb 1-y Er y ) (Zr x Ti 1-x )O 3 and a platinum upper electrode which are sequentially formed on an n-type silicon substrate; 0.45≦x≦0.8 and 0.005≦y≦0.1 being set.
Claim 6
Dependent Claim
58 words
A dielectric thin film element comprising a thermally grown silicon dioxide film, a titanium film, a platinum lower electrode, a film of erbium lead zirconate titanate represented by (Pb 1-y Er y ) (Zr x Ti 1-x )O 3 and a platinum upper electrode which are sequentially formed on an n-type silicon substrate; 0.45≦x≦0.8 and 0.005≦y≦0.1 being set.
Claim 7
Dependent Claim
49 words
A non-volatile memory combined with a switching transistor using a dielectric thin film as a capacitor insulating layer connected to a MOS transistor; the dielectric thin film being constructed from lead erbium zirconate titanate represented by (Pb 1-y Er y ) (Zr x Ti 1-x )O 3 ; and
Claim 8
Dependent Claim
49 words
A non-volatile memory combined with a switching transistor using a dielectric thin film as a capacitor insulating layer connected to a MOS transistor; the dielectric thin film being constructed from lead erbium zirconate titanate represented by (Pb 1-y Er y ) (Zr x Ti 1-x )O 3 ; and
Claim 9
Dependent Claim
5 words
52≦x≦0.7 and 0.005≦y≦0.05 being set.
Claim 10
Dependent Claim
5 words
52≦x≦0.7 and 0.005≦y≦0.05 being set.
Claim 11
Dependent Claim
59 words
A metal ferroelectric metal insulator semiconductor FET as a MFMIS-FET in which a dielectric thin film is buried as an insulating gate film of a field effect transistor; the dielectric thin film being constructed from lead erbium zirconate titanate represented by (Pb 1-y Er y ) (Zr x Ti 1-x )O 3 ; and 0.45≦x≦0.8 and 0.005≦y≦0.05 being set.
Claim 12
Dependent Claim
59 words
A metal ferroelectric metal insulator semiconductor FET as a MFMIS-FET in which a dielectric thin film is buried as an insulating gate film of a field effect transistor; the dielectric thin film being constructed from lead erbium zirconate titanate represented by (Pb 1-y Er y ) (Zr x Ti 1-x )O 3 ; and 0.45≦x≦0.8 and 0.005≦y≦0.05 being set.
Claim 13
Dependent Claim
50 words
A flattened STC-type DRAM comprising a number of memory cells each constructed by one transistor and a capacitor; said capacitor having a dielectric thin film of lead erbium zirconate titanate represented by (Pb 1-y Er y ) (Zr x Ti 1-x )O 3 ; and 0.45≦x≦0.75 and 0.05≦y≦0.1 being set.
Claim 14
Dependent Claim
50 words
A flattened STC-type DRAM comprising a number of memory cells each constructed by one transistor and a capacitor; said capacitor having a dielectric thin film of lead erbium zirconate titanate represented by (Pb 1-y Er y ) (Zr x Ti 1-x )O 3 ; and 0.45≦x≦0.75 and 0.05≦y≦0.1 being set.
Claim 15
Dependent Claim
62 words
An infrared linear array sensor of a pyroelectric thin film type comprising a light receiving electrode, a dielectric thin film and an array electrode sequentially formed to detect an infrared ray; the dielectric thin film being constructed from lead erbium zirconate titanate represented by (Pb 1-y Er y ) (Zr x Ti 1-x )O 3 ; and 0.45≦x≦0.75 and 0.005≦y≦0.1 being set.
Claim 16
Dependent Claim
62 words
An infrared linear array sensor of a pyroelectric thin film type comprising a light receiving electrode, a dielectric thin film and an array electrode sequentially formed to detect an infrared ray; the dielectric thin film being constructed from lead erbium zirconate titanate represented by (Pb 1-y Er y ) (Zr x Ti 1-x )O 3 ; and 0.45≦x≦0.75 and 0.005≦y≦0.1 being set.
Claim 17
Dependent Claim
51 words
A piezoelectric sensor comprising a cantilever beam, a first electrode, a dielectric thin film and a second electrode sequentially formed; the dielectric thin film being constructed from lead erbium zirconate titanate represented by (Pb 1-y Er y ) (Zr x Ti 1-x )O 3 ; and 0.45≦x≦0.75 and 0.005≦y≦0.1 being set.
Claim 18
Dependent Claim
51 words
A piezoelectric sensor comprising a cantilever beam, a first electrode, a dielectric thin film and a second electrode sequentially formed; the dielectric thin film being constructed from lead erbium zirconate titanate represented by (Pb 1-y Er y ) (Zr x Ti 1-x )O 3 ; and 0.45≦x≦0.75 and 0.005≦y≦0.1 being set.
Claim 19
Dependent Claim
57 words
An optical modulator of a waveguide type comprising a dielectric thin film, a buffer layer and two separated metallic electrodes formed on a substrate at the crossing point of two waveguides; the dielectric thin film being constructed from lead erbium zirconate titanate represented by (Pb 1-y Er y ) (Zr x Ti 1-x )O 3 ; and
Claim 20
Dependent Claim
57 words
An optical modulator of a waveguide type comprising a dielectric thin film, a buffer layer and two separated metallic electrodes formed on a substrate at the crossing point of two waveguides; the dielectric thin film being constructed from lead erbium zirconate titanate represented by (Pb 1-y Er y ) (Zr x Ti 1-x )O 3 ; and
Claim 21
Dependent Claim
5 words
005≦x≦0.1 and 0.45≦y≦0.75 being set.
Claim 22
Dependent Claim
5 words
005≦x≦0.1 and 0.45≦y≦0.75 being set.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-11-26 | 2000-05-27 | 2000-11-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-11-26 | 2004-05-27 | 2004-11-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-11-26 | 2008-05-27 | 2008-11-26 | $7700.00 | Window Closed / Lapsed |