Patent US5576231A successfully refreshed from Google Patents.
US5576231A
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Process for fabricating an insulated gate field effect transistor with an anodic oxidized gate electrode
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1995-06-02
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Granted: 1996-11-19
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Expires: 2015-06-02
Abstract
Abstract A thin film transistor comprising a gate electrode offset from source and drain, which comprises a substrate having thereon a gate electrode fabricated on an active region provided on the substrate, wherein, an anodic oxide of the material constituting the gate electrode is provided on the side and the upper face of said gate electrode, and the anodic oxide on the side of the gate electrode is formed thicker than the anodic oxide formed on the upper face. Also claimed is a process for fabricating the above thin film transistor improved in device characteristics and product yield, which comprises forming a gate electrode with an anodically oxidizable material having thereon a masking material, providing a relatively thick porous anodic oxide film on the side of the gate electrode by anodic oxidation effected under a relatively low voltage, then forming a dense anodic oxide film on at least the upper face of the gate electrode after removing the masking material, and introducing impurities into the semiconductor layer using the gate electrode portion having thereon the anodic oxide films as a mask.
Inventors
- 👤 Toshimitsu Konuma
- 👤 Akira Sugawara
- 👤 Takahiro Tsuji
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 16:17
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/6704; H10D30/6713; H10D30/6715; Y; Y10; Y10S; Y10S257/00; Y10S257/90
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
182 words
A process for fabricating a thin film transistor comprising: a first step of forming a gate insulating film on the surface of an active region formed on the substrate; a second step of forming a first coating which is capable of being anodically oxidized on the gate insulating film, and forming further on said first coating a second coating which provides a masking material; a third step of patterning said first and said second coating to form a gate electrode and the masking material on said gate electrode; a fourth step of forming an anodic oxide on a side of the gate electrode with the masking material by applying a current to said gate electrode; a fifth step of applying a current to the gate electrode to form an anodic oxide on at least an upper side of the gate electrode after removing the masking material; and a sixth step of introducing an impurity into the active region by using the anodic oxide and the gate electrode obtained in at least one of the fourth and fifth step above as the masks.
Claim 2
Dependent Claim
182 words
A process for fabricating a thin film transistor comprising: a first step of forming a gate insulating film on the surface of an active region formed on the substrate; a second step of forming a first coating which is capable of being anodically oxidized on the gate insulating film, and forming further on said first coating a second coating which provides a masking material; a third step of patterning said first and said second coating to form a gate electrode and the masking material on said gate electrode; a fourth step of forming an anodic oxide on a side of the gate electrode with the masking material by applying a current to said gate electrode; a fifth step of applying a current to the gate electrode to form an anodic oxide on at least an upper side of the gate electrode after removing the masking material; and a sixth step of introducing an impurity into the active region by using the anodic oxide and the gate electrode obtained in at least one of the fourth and fifth step above as the masks.
Claim 3
Dependent Claim
18 words
The process of claim 1 wherein the first coating is made of an electrically conductive material comprising aluminum.
Claim 4
Dependent Claim
16 words
The process of claim 1 wherein the second coating is made of a light-sensitive organic material.
Claim 5
Dependent Claim
23 words
The process of claim 1 wherein after forming the first coating, the surface of the first coating is oxidized in the second step.
Claim 6
Dependent Claim
22 words
The process of claim 1 wherein the anodic oxide formed mainly by effecting the fourth step is removed after the sixth step.
Claim 7
Dependent Claim
13 words
The process of claim 1 wherein said gate electrode comprises aluminum and scandium.
Claim 8
Dependent Claim
17 words
The process of claim 1 wherein said gate electrode contains scandium at 0.1 to 0.3% by weight.
Claim 9
Dependent Claim
184 words
A process for fabricating a thin film transistor comprising: a first step of forming a gate insulating film on the surface of an active region formed on the substrate; a second step of forming a first coating which is capable of being anodically oxidized on the gate insulating film, and forming further on said first coating a second coating which provides a masking material; a third step of patterning said first and said second coating to form a gate electrode and the masking material on said gate electrode; a fourth step of forming a porous anodic oxide on a side of the gate electrode with the masking material by applying a current to said gate electrode; a fifth step of applying a current to the gate electrode to form a pore-free anodic oxide on at least an upper side of the gate electrode after removing the masking material; and a sixth step of introducing an impurity into the active region by using the anodic oxide and the gate electrode obtained in at least one of the fourth and fifth step above as the masks.
Claim 10
Dependent Claim
184 words
A process for fabricating a thin film transistor comprising: a first step of forming a gate insulating film on the surface of an active region formed on the substrate; a second step of forming a first coating which is capable of being anodically oxidized on the gate insulating film, and forming further on said first coating a second coating which provides a masking material; a third step of patterning said first and said second coating to form a gate electrode and the masking material on said gate electrode; a fourth step of forming a porous anodic oxide on a side of the gate electrode with the masking material by applying a current to said gate electrode; a fifth step of applying a current to the gate electrode to form a pore-free anodic oxide on at least an upper side of the gate electrode after removing the masking material; and a sixth step of introducing an impurity into the active region by using the anodic oxide and the gate electrode obtained in at least one of the fourth and fifth step above as the masks.
Claim 11
Dependent Claim
193 words
A process for fabricating a thin film transistor comprising: a first step of forming a gate insulating film on the surface of an active region formed on the substrate; a second step of forming a first coating which is capable of being anodically oxidized on the gate insulating film, and forming further on said first coating a second coating which provides a masking material; a third step of patterning said first and said second coating to form a gate electrode and the masking material on said gate electrode; a fourth step of forming a porous anodic oxide on a side of the gate electrode with the masking material by applying a current to said gate electrode; a fifth step of applying a current to the gate electrode to form a pore-free anodic oxide on at least an upper side of the gate electrode after removing the masking material; a sixth step of introducing an impurity into the active region by using the anodic oxide and the gate electrode obtained in at least one of the fourth and fifth step above as the masks; and a seventh step of removing said porous anodic oxide.
Claim 12
Dependent Claim
193 words
A process for fabricating a thin film transistor comprising: a first step of forming a gate insulating film on the surface of an active region formed on the substrate; a second step of forming a first coating which is capable of being anodically oxidized on the gate insulating film, and forming further on said first coating a second coating which provides a masking material; a third step of patterning said first and said second coating to form a gate electrode and the masking material on said gate electrode; a fourth step of forming a porous anodic oxide on a side of the gate electrode with the masking material by applying a current to said gate electrode; a fifth step of applying a current to the gate electrode to form a pore-free anodic oxide on at least an upper side of the gate electrode after removing the masking material; a sixth step of introducing an impurity into the active region by using the anodic oxide and the gate electrode obtained in at least one of the fourth and fifth step above as the masks; and a seventh step of removing said porous anodic oxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-11-19 | 2000-05-20 | 2000-11-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-11-19 | 2004-05-20 | 2004-11-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-11-19 | 2008-05-20 | 2008-11-19 | $7700.00 | Window Closed / Lapsed |