US5573981A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of removing residual charges of an electrostatic chuck used in a layer deposition process
Assignee: Sony Corp
•
Filing: 1994-09-20
•
Granted: 1996-11-12
•
Expires: 2014-09-20
Abstract
Abstract A method depositing a layer onto a wafer is disclosed. The method has the steps of: affixing the wafer to a wafer support within a deposition chamber by using a single-pole electrostatic chuck; depositing a layer onto a surface of the wafer by plasma by CVD; exhausting a deposition gas used for depositing the layer from the deposition chamber; introducing a residual charge removing gas into the deposition chamber; and forming a residual charge removing plasma by discharging the gas to remove residual charges of the single-pole electrostatic chuck.
Inventors
- 👤 Junichi Sato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 05:46
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/70; H10P72/72; H10P72/722; C; C23; C23C; C23C16/00; C23C16/44; C23C16/4401; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4586
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
110 words
A method depositing a layer onto a wafer, comprising the steps of: affixing the wafer to a wafer support within a deposition chamber by using a single-pole electrostatic chuck; depositing a layer onto a surface of the wafer by plasma CVD using a deposition gas having at least two reactive component gases; exhausting the deposition gas from the deposition chamber; introducing a charge removal gas composed of at least one of the reactive component gases of the deposition gas into the deposition chamber after the exhausting step; and forming a residual charge removing plasma by discharging the charge removal gas to remove residual charges remaining on the single-pole electrostatic chuck.
Claim 2
Independent Claim
110 words
A method depositing a layer onto a wafer, comprising the steps of: affixing the wafer to a wafer support within a deposition chamber by using a single-pole electrostatic chuck; depositing a layer onto a surface of the wafer by plasma CVD using a deposition gas having at least two reactive component gases; exhausting the deposition gas from the deposition chamber; introducing a charge removal gas composed of at least one of the reactive component gases of the deposition gas into the deposition chamber after the exhausting step; and forming a residual charge removing plasma by discharging the charge removal gas to remove residual charges remaining on the single-pole electrostatic chuck.
Claim 3
Dependent Claim
52 words
The method of depositing a layer onto a wafer, as claimed in claim 1, wherein the steps of exhausting the deposition gas and introducing the charge removal gas for removing residual charges are repeated twice in this order between the steps of depositing the layer and forming the residual charge removing plasma.
Claim 4
Dependent Claim
26 words
The method according to claim 1, comprising the further step of removing said wafer from the wafer support after the residual charges have been substantially removed.
Claim 5
Independent Claim
98 words
A method of depositing a layer onto a wafer, comprising the steps of: affixing a layer onto a wafer support within a deposition chamber by using a single-pole electrostatic chuck; depositing a layer onto a surface of the wafer by plasma CVD using a deposition gas composed of at least two reactive gas components; evacuating the deposition chamber while supplying, at least one of the reactive gas components of the deposition gas as charge removing gas; and forming a residual charge removing plasma by discharging the charge removing gas to remove residual charges of the single-pole electrostatic chuck.
Claim 6
Independent Claim
98 words
A method of depositing a layer onto a wafer, comprising the steps of: affixing a layer onto a wafer support within a deposition chamber by using a single-pole electrostatic chuck; depositing a layer onto a surface of the wafer by plasma CVD using a deposition gas composed of at least two reactive gas components; evacuating the deposition chamber while supplying, at least one of the reactive gas components of the deposition gas as charge removing gas; and forming a residual charge removing plasma by discharging the charge removing gas to remove residual charges of the single-pole electrostatic chuck.
Claim 7
Dependent Claim
26 words
The method according to claim 4, comprising the further step of removing said wafer from the wafer support after the residual charges have been substantially removed.
Claim 8
Independent Claim
140 words
A method depositing a layer onto a wafer, comprising the steps of: affixing the wafer to a wafer support within a deposition chamber by using a single-pole electrostatic chuck; depositing a layer onto a surface of the wafer by plasma CVD; exhausting a deposition gas used for depositing the layer from the deposition chamber; introducing a charge removal gas for removing a residual charge into the deposition chamber, said charge removal gas composed of a component of the deposition gas; forming a residual charge removing plasma by discharging the charge removal gas to remove residual charges of the single-pole electrostatic chuck; and wherein the steps of exhausting the deposition gas and introducing the charge removal gas for removing residual charges are repeated twice in this order between the steps of depositing the layer and forming the residual charge removing plasma.
Claim 9
Independent Claim
140 words
A method depositing a layer onto a wafer, comprising the steps of: affixing the wafer to a wafer support within a deposition chamber by using a single-pole electrostatic chuck; depositing a layer onto a surface of the wafer by plasma CVD; exhausting a deposition gas used for depositing the layer from the deposition chamber; introducing a charge removal gas for removing a residual charge into the deposition chamber, said charge removal gas composed of a component of the deposition gas; forming a residual charge removing plasma by discharging the charge removal gas to remove residual charges of the single-pole electrostatic chuck; and wherein the steps of exhausting the deposition gas and introducing the charge removal gas for removing residual charges are repeated twice in this order between the steps of depositing the layer and forming the residual charge removing plasma.
Claim 10
Dependent Claim
26 words
The method according to claim 6, comprising the further step of removing said wafer from the wafer support after the residual charges have been substantially removed.
References Cited (Backward Citations)
US4728389A
Cited
US4983548A
Cited
US5395796A
Cited
JPH03243188A
Cited
US5255153A
Cited
JPH0513556A
Cited
US5310453A
Cited
US5378311A
Cited
US5382311A
Cited
US5474614A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-11-12 | 2000-05-13 | 2000-11-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-11-12 | 2004-05-13 | 2004-11-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-11-12 | 2008-05-13 | 2008-11-12 | $7700.00 | Window Closed / Lapsed |