Method of forming a metal wire in a semiconductor device

Claim 1

A method of forming a metal wire in a semiconductor device comprising: providing a silicon substrate which has an overlying oxide layer and a junction area; forming a contact hole by removing a portion of the oxide layer overlaying said silicon substrate, thereby exposing the junction area on said silicon substrate but leaving at least one surface of said oxide layer; forming a titanium layer on the resulting silicon substrate including said contact hole and said at least one surface, said layer formed by a chemical vapor deposition process; forming a first titanium nitride layer on said titanium layer; exposing the resulting silicon substrate including said first titanium nitride layer to the atmosphere; forming a second titanium nitride layer on said first titanium nitride layer by a chemical vapor deposition process; exposing the resulting silicon substrate including said second titanium nitride layer to the atmosphere; forming a third titanium nitride layer on said second titanium nitride layer by a chemical vapor deposition process; exposing the resulting silicon substrate including said third titanium nitride layer to the atmosphere; removing said titanium layer and said first, second and third titanium nitride layers overlaying said at least one surface of said oxide layer so as to expose said one surface of said oxide layer and first surfaces of said first, second and third layers; sequentially depositing a titanium-containing tungsten layer, an aluminum alloy layer and a fourth titanium nitride layer on the resulting one surface of said oxide layer and first surfaces of said first, second and third layers; and removing a portion of said titanium-containing tungsten layer, said aluminum alloy layer and said fourth titanium nitride layer to form a metal wire.

Claim 2

A method of forming a metal wire in a semiconductor device comprising: providing a silicon substrate which has an overlying oxide layer and a junction area; forming a contact hole by removing a portion of the oxide layer overlaying said silicon substrate, thereby exposing the junction area on said silicon substrate but leaving at least one surface of said oxide layer; forming a titanium layer on the resulting silicon substrate including said contact hole and said at least one surface, said layer formed by a chemical vapor deposition process; forming a first titanium nitride layer on said titanium layer; exposing the resulting silicon substrate including said first titanium nitride layer to the atmosphere; forming a second titanium nitride layer on said first titanium nitride layer by a chemical vapor deposition process; exposing the resulting silicon substrate including said second titanium nitride layer to the atmosphere; forming a third titanium nitride layer on said second titanium nitride layer by a chemical vapor deposition process; exposing the resulting silicon substrate including said third titanium nitride layer to the atmosphere; removing said titanium layer and said first, second and third titanium nitride layers overlaying said at least one surface of said oxide layer so as to expose said one surface of said oxide layer and first surfaces of said first, second and third layers; sequentially depositing a titanium-containing tungsten layer, an aluminum alloy layer and a fourth titanium nitride layer on the resulting one surface of said oxide layer and first surfaces of said first, second and third layers; and removing a portion of said titanium-containing tungsten layer, said aluminum alloy layer and said fourth titanium nitride layer to form a metal wire.

Claim 3

A method of forming a metal wire in a semiconductor device comprising: providing a silicon substrate which has an overlying oxide layer and a junction area; forming a contact hole by removing a portion of the oxide layer overlaying said silicon substrate, thereby exposing the junction area on said silicon substrate but leaving at least one surface of said oxide layer; forming a titanium layer on the resulting silicon substrate including said contact hole and said at least one surface by a chemical vapor deposition process; forming a first titanium nitride layer on said titanium layer; annealing the resulting silicon substrate including said first titanium nitride layer; forming a second titanium nitride layer on said first titanium nitride layer by a chemical vapor deposition process; annealing the resulting silicon substrate including said second titanium nitride layer; forming a third titanium nitride layer on said second titanium nitride layer by a chemical vapor deposition process; annealing the resulting silicon substrate including said third titanium nitride layer; removing said titanium layer, said first, second and third titanium nitride layers overlaying said at least one surface of said oxide layer so as to expose said one surface of said layer and first surfaces of said first, second and third layers; sequentially depositing a titanium-containing tungsten layer, an aluminum alloy layer and a fourth titanium nitride layer on the resulting one surface of said oxide layer and first surfaces of said first, second and third layers; and removing a portion of said titanium-containing tungsten layer, said aluminum alloy layer and said fourth titanium nitride layer to form a metal wire.

Claim 4

A method of forming a metal wire in a semiconductor device comprising: providing a silicon substrate which has an overlying oxide layer and a junction area; forming a contact hole by removing a portion of the oxide layer overlaying said silicon substrate, thereby exposing the junction area on said silicon substrate but leaving at least one surface of said oxide layer; forming a titanium layer on the resulting silicon substrate including said contact hole and said at least one surface by a chemical vapor deposition process; forming a first titanium nitride layer on said titanium layer; annealing the resulting silicon substrate including said first titanium nitride layer; forming a second titanium nitride layer on said first titanium nitride layer by a chemical vapor deposition process; annealing the resulting silicon substrate including said second titanium nitride layer; forming a third titanium nitride layer on said second titanium nitride layer by a chemical vapor deposition process; annealing the resulting silicon substrate including said third titanium nitride layer; removing said titanium layer, said first, second and third titanium nitride layers overlaying said at least one surface of said oxide layer so as to expose said one surface of said layer and first surfaces of said first, second and third layers; sequentially depositing a titanium-containing tungsten layer, an aluminum alloy layer and a fourth titanium nitride layer on the resulting one surface of said oxide layer and first surfaces of said first, second and third layers; and removing a portion of said titanium-containing tungsten layer, said aluminum alloy layer and said fourth titanium nitride layer to form a metal wire.