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US5573728A Expired / Lapsed US ⏱️ 0.0 years remaining

Device for selective detection of gas

Assignee: Engie SA
•
Filing: 1993-06-04
•
Granted: 1996-11-12
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Expires: 2013-06-04
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Abstract

Abstract A device for selective detection of gas, enabling a first gas to be detected relative to a second gas, the device having a solid state sensor provided with an insulating substrate having a first face and a second face, a heater element deposited on the first face of said substrate, metal electrodes deposited on the second face of said substrate, and a semiconductor layer formed on said electrode and over the second face of said substrate. Detection is performed by simultaneously determining a voltage U representative of the resistance of the semiconductor element of the solid state sensor and the voltage difference S between a voltage representative of the temperature of the heater element of said solid state sensor and a voltage representative of the temperature of a heater element of a reference sensor, the voltage U and the voltage difference S each being compared with a different and predetermined threshold voltage in order to enable selective detection of gas.

Inventors

  • 👤 Muriel Loesch
  • 👤 Francis Menil
  • 👤 Claude Lucat
  • 👤 Pascale Dutronc
  • 👤 V eronique Marteau

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 19:25
CPC Classifications
G; G01; G01N; G01N27/00; G01N27/02; G01N27/04; G01N27/12; G01N27/122; G01N27/123

Claims Analysis

Total Claims: 18
Claim 1
Independent Claim 224 words
A device for selective detection of gas, enabling a first gas to be detected relative to a second gas, one of said gases being combustible, the device comprising a solid state sensor provided with an insulating substrate having a first face and a second face, a heater element disposed on the first face of said substrate, and a semiconductor layer formed on the second face of said substrate, the semiconductor layer having a resistance which varies in the presence of one of said gases; a reference sensor provided with an insulting substrate having a first face and a second face and a heater element disposed on the first face of said substrate; means for determining a voltage U representative of the resistance of the semiconductor layer of the solid state measurement sensor; means passing sufficient current through the heater elements to permit combustion of said combustible gas; means for determining the voltage difference S between a voltage representative of the temperature of the heater element of said solid state measurement sensor and a voltage representative of the temperature of the heater element of the reference sensor; means providing a first threshhold voltage; means providing a second threshold voltage; first means for comparing the voltage U with the first threshhold voltage; and second means for comparing the voltage difference S with the second threshold voltage.
Claim 2
Independent Claim 224 words
A device for selective detection of gas, enabling a first gas to be detected relative to a second gas, one of said gases being combustible, the device comprising a solid state sensor provided with an insulating substrate having a first face and a second face, a heater element disposed on the first face of said substrate, and a semiconductor layer formed on the second face of said substrate, the semiconductor layer having a resistance which varies in the presence of one of said gases; a reference sensor provided with an insulting substrate having a first face and a second face and a heater element disposed on the first face of said substrate; means for determining a voltage U representative of the resistance of the semiconductor layer of the solid state measurement sensor; means passing sufficient current through the heater elements to permit combustion of said combustible gas; means for determining the voltage difference S between a voltage representative of the temperature of the heater element of said solid state measurement sensor and a voltage representative of the temperature of the heater element of the reference sensor; means providing a first threshhold voltage; means providing a second threshold voltage; first means for comparing the voltage U with the first threshhold voltage; and second means for comparing the voltage difference S with the second threshold voltage.
Claim 3
Dependent Claim 33 words
A device according to claim 1, wherein the semiconductor layer of the solid state measurement sensor is provided with a catalyst constituting more than 1% but not more than 20% by weight thereof.
Claim 4
Dependent Claim 14 words
A device according to claim 1, wherein the sensors are made using multilayer technology.
Claim 5
Dependent Claim 17 words
A device according to claim 1, wherein said threshold voltages are derived from a single reference source.
Claim 6
Dependent Claim 30 words
A device according to claim 1, wherein the current passing means comprises means disposing the heater elements in respective branches of a resistance bridge powered from a single reference source.
Claim 7
Dependent Claim 39 words
A device according to claim 1 wherein the second face of the reference sensor is covered by an insulating layer having such thickness that the heating elements of the sensors have identical thermal responses to variations in ambient temperature.
Claim 8
Dependent Claim 32 words
A device according to claim 1, further including means responsive to the first and second comparing means for providing an alarm when one of the first and second threshold voltages is crossed.
Claim 9
Dependent Claim 20 words
A device according to claim 1, wherein said reference sensor further includes a catalyst-free insulating layer covering the heater element.
Claim 10
Dependent Claim 18 words
A device according to claim 8, wherein the insulating layer of the reference sensor is made of glass.
Claim 11
Dependent Claim 23 words
A device according to claim 1, wherein said reference sensor further includes a catalyst-free insulating layer covering the second face of said substrate.
Claim 12
Dependent Claim 18 words
A device according to claim 10 wherein the insulating layer of the reference sensor is made of glass.
Claim 13
Dependent Claim 23 words
A device according to claim 1, wherein said solid state measurement sensor also includes an porous insulating deposit deposited on the semiconductor layer.
Claim 14
Dependent Claim 14 words
A device according to claim 12, wherein the insulating deposit is constituted by alumina.
Claim 15
Dependent Claim 26 words
A device according to claim 12, wherein the insulating deposit is provided with a catalyst constituting more than 1% but more than 20% by weight thereof.
Claim 16
Dependent Claim 19 words
A device according to claim 1, wherein the measurement sensor further includes an insulating layer covering the heater element.
Claim 17
Dependent Claim 27 words
A device according to claim 15 wherein the insulating layer is provided with a catalyst constituting more than 1% but not more than 20% by weight thereof.
Claim 18
Dependent Claim 14 words
A device according to claim 15 wherein the insulating layer is constituted by alumina.

References Cited (Backward Citations)

GB2002907A Cited
US4443791A Cited
US4457161A Cited
US4541988A Cited
US4911892A Cited
US4847783A Cited
EP0313390A2 Cited
US5047214A Cited
EP0444753A1 Cited
US5400643A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1999-11-12 2000-05-13 2000-11-12 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2003-11-12 2004-05-13 2004-11-12 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2007-11-12 2008-05-13 2008-11-12 $7700.00 Window Closed / Lapsed

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