Semiconductor device and process for fabricating the same

Claim 2

A semiconductor device comprising: at least two transistors formed in an active semiconductor layer on a substrate having an insulating surface thereon, wherein the active layer at a periphery of each of the transistors is thermally oxidized to provide a thermal oxide insulating film to electrically isolate the two transistors, and the active layer of each of the transistors has a crystal growth direction in parallel with the substrate.

Claim 3

The device of claim 1 wherein said insulating film is provided by oxidation under an oxidizing atmosphere containing water vapor.

Claim 4

The device of claim 1 wherein said insulating film is oxidized in an oxidizing atmosphere under a pressure of from 1 to 15 atm.

Claim 5

The device of claim 1 wherein the active layer is a silicon film having a thickness of 100 to 1500Å.

Claim 6

The device of claim 1 wherein the substrate has a strain point of 750° C. or lower.

Claim 7

The device of claim 1 wherein the at least two transistors comprise a p-channel transistor and an n-channel transistor.

Claim 8

A semiconductor device comprising: at least two transistors with active layers formed in a non-single crystal silicon film on a substrate, wherein a thermal oxide insulating film electrically isolating the two transistors, comprising silicon oxide and formed in contact with the side plane of the active layer of each of the transistors, is formed by thermally oxidizing the same non-single crystal silicon film as that of said active layer in the temperature range of from 500° to 650° C., and said active layer has a crystal growth direction in parallel with the substrate.

Claim 9

A semiconductor device comprising: at least two transistors with active layers formed in a non-single crystal silicon film on a substrate, wherein a thermal oxide insulating film electrically isolating the two transistors, comprising silicon oxide and formed in contact with the side plane of the active layer of each of the transistors, is formed by thermally oxidizing the same non-single crystal silicon film as that of said active layer in the temperature range of from 500° to 650° C., and said active layer has a crystal growth direction in parallel with the substrate.

Claim 10

The device of claim 7 wherein said active layer is provided at a thickness of 1,000 Å, or less.

Claim 11

The device of claim 7 wherein the substrate has a strain point of 750° C. or lower.

Claim 12

The device of claim 7 wherein the at least two transistors comprise a p-channel transistor and an n-channel transistor.

Claim 13

A semiconductor device comprising: at least two transistors with active layers formed in a non-single crystal silicon film on a substrate, wherein the transistors are isolated from each other by a thermal oxide insulator comprising silicon oxide provided in contact with the sides of the active layers of the two transistors, which is formed by thermally oxidizing the same non-single crystal silicon film as that of said active layers in the temperature range of from 500° to 650° C., and wherein the active layers and the thermal oxide insulator contain a material which exerts a catalytic effect on crystallization of the non-single crystal silicon film of said active layers, and said silicon film has a direction of crystal growth parallel to said substrate, said crystal growth direction initiated by said catalytic effect.

Claim 14

A semiconductor device comprising: at least two transistors with active layers formed in a non-single crystal silicon film on a substrate, wherein the transistors are isolated from each other by a thermal oxide insulator comprising silicon oxide provided in contact with the sides of the active layers of the two transistors, which is formed by thermally oxidizing the same non-single crystal silicon film as that of said active layers in the temperature range of from 500° to 650° C., and wherein the active layers and the thermal oxide insulator contain a material which exerts a catalytic effect on crystallization of the non-single crystal silicon film of said active layers, and said silicon film has a direction of crystal growth parallel to said substrate, said crystal growth direction initiated by said catalytic effect.

Claim 15

The device of claim 11 wherein the active layers have a thickness of 100 to 1500Å.

Claim 16

The device of claim 11 wherein the substrate has a strain point of 750° C. or lower.

Claim 17

The device of claim 11 wherein the at least two transistors comprise a p-channel transistor and an n-channel transistor.

Claim 18

A process for fabricating a semiconductor device comprising the steps of: forming a non-single crystal silicon film on a substrate; selectively forming a mask film to define a mask area on said silicon film; forming a material in contact with said silicon film around said mask film, said material having a catalytic effect on crystallization of the non-single crystal silicon film; crystallizing said silicon film from a location of the contact of said material with said silicon film in a crystal growth direction parallel with said substrate, using said catalytic effect to initiate said crystal growth direction; oxidizing said silicon film by allowing it to stand in an oxidizing atmosphere in the temperature range of from 500° C. to 650° C. using said mask film; removing said mask film; forming a gate insulating film on said silicon film in said mask area; and forming a gate electrode on said gate insulating film, wherein said crystallizing step is carried out using said mask film.

Claim 19

A process for fabricating a semiconductor device comprising the steps of: forming a non-single crystal silicon film on a substrate; selectively forming a mask film to define a mask area on said silicon film; forming a material in contact with said silicon film around said mask film, said material having a catalytic effect on crystallization of the non-single crystal silicon film; crystallizing said silicon film from a location of the contact of said material with said silicon film in a crystal growth direction parallel with said substrate, using said catalytic effect to initiate said crystal growth direction; oxidizing said silicon film by allowing it to stand in an oxidizing atmosphere in the temperature range of from 500° C. to 650° C. using said mask film; removing said mask film; forming a gate insulating film on said silicon film in said mask area; and forming a gate electrode on said gate insulating film, wherein said crystallizing step is carried out using said mask film.

Claim 20

The process of claim 15 wherein the oxidizing atmosphere contains water vapor.

Claim 21

The process of claim 15 wherein said step of oxidizing the silicon film is effected at a pressure of 2 atm or higher.

Claim 22

The process of claim 15 wherein the non-single crystal silicon film is formed to a thickness of 1500 Å or less.

Claim 23

The process of claim 15 further comprising after said mask film forming step, a step of reducing the thickness of said non-single crystal silicon film using said mask film.

Claim 24

The process of claim 15 wherein said silicon film is oxidized from a surface thereof exposed through said mask film.

Claim 25

The device of claim 11 wherein said material comprises nickel.

Claim 26

The process of claim 15 wherein said material comprises nickel.