Abstract The present invention provides an interconnect structure which offers good mechanical stability and reduced charge concentration along the metal-insulator boundary corresponding to lower capacitance. The interconnect structure is comprised of a conductive transmission line structure and a transmission line support structure. The support structure has a "railway trestle-like" construction that provides a braced framework to support the transmission line with a greatly reduced effective dielectric constant. The trestle-like construction of the support structure is comprised of a membrane-like structure and supporting base structure separated by column-like support members. Spaces between the column-like support members form air pockets. The surface of the supporting base structure defines a horizontal axis. The long axis of the column-like support members are typically positioned at a 90 degree angle to the horizontal axis, thus defining a vertical axis support.
An interconnect structure in an integrated circuit device comprising: a first membrane-like structure having first and second opposite surfaces; a supporting base structure having a first surface; a first set of support members positioned between the first surface of the first membrane-like structure and the first surface of the supporting base structure, the first set of support members being generally orthogonal to the first surface of the first membrane-like structure and the first surface of the supporting base structure, the first set of support members being comprised of a dielectric material; and a first conductive structure positioned adjacent to the first membrane-like structure; wherein the sidewalls of the first conductive structure are centered around the sidewalls of a given corresponding first set of support members.
Claim 2
Dependent Claim
125 words
An interconnect structure in an integrated circuit device comprising: a first membrane-like structure having first and second opposite surfaces; a supporting base structure having a first surface; a first set of support members positioned between the first surface of the first membrane-like structure and the first surface of the supporting base structure, the first set of support members being generally orthogonal to the first surface of the first membrane-like structure and the first surface of the supporting base structure, the first set of support members being comprised of a dielectric material; and a first conductive structure positioned adjacent to the first membrane-like structure; wherein the sidewalls of the first conductive structure are centered around the sidewalls of a given corresponding first set of support members.
Claim 3
Dependent Claim
129 words
An interconnect structure in an integrated circuit device comprising: a first membrane-like structure having first and second opposite surfaces; a supporting base structure having a first surface; a first set of support members positioned between the first surface of the first membrane-like structure and the first surface of the supporting base structure, the first set of support members being generally orthogonal to the first surface of the first membrane-like structure and the first surface of the supporting base structure, the first set of support members being comprised of a dielectric material; and a first conductive structure positioned adjacent to the first membrane-like structure; wherein air pockets are formed between the support members, wherein the sidewalls of the first conductive structure are located between the sidewalls of the air pocket.
Claim 4
Dependent Claim
129 words
An interconnect structure in an integrated circuit device comprising: a first membrane-like structure having first and second opposite surfaces; a supporting base structure having a first surface; a first set of support members positioned between the first surface of the first membrane-like structure and the first surface of the supporting base structure, the first set of support members being generally orthogonal to the first surface of the first membrane-like structure and the first surface of the supporting base structure, the first set of support members being comprised of a dielectric material; and a first conductive structure positioned adjacent to the first membrane-like structure; wherein air pockets are formed between the support members, wherein the sidewalls of the first conductive structure are located between the sidewalls of the air pocket.
Claim 5
Dependent Claim
140 words
An interconnect structure in an integrated circuit device comprising: a first membrane-like structure having first and second opposite surfaces; a supporting base structure having a first surface; a first set of support members positioned between the first surface of the first membrane-like structure and the first Surface of the supporting base structure, the first set of support members being generally orthogonal to the first surface of the first membrane-like structure and the first surface of the supporting base structure, the first set of support members being comprised of a dielectric material; and a first conductive structure positioned both adjacent to and below the first membrane-like structure, wherein a first air pocket is formed beneath at least a portion of the first conductive structure: wherein a first surface of the first conductive structure forms a sidewall of a first air pocket.
Claim 6
Dependent Claim
140 words
An interconnect structure in an integrated circuit device comprising: a first membrane-like structure having first and second opposite surfaces; a supporting base structure having a first surface; a first set of support members positioned between the first surface of the first membrane-like structure and the first Surface of the supporting base structure, the first set of support members being generally orthogonal to the first surface of the first membrane-like structure and the first surface of the supporting base structure, the first set of support members being comprised of a dielectric material; and a first conductive structure positioned both adjacent to and below the first membrane-like structure, wherein a first air pocket is formed beneath at least a portion of the first conductive structure: wherein a first surface of the first conductive structure forms a sidewall of a first air pocket.