Method of forming gate spacer to control the base width of a lateral bipolar junction transistor using SOI technology

Claim 3

The method of claim 1, wherein said silicon on insulator layer, is produced via the SIMOX process, resulting in a P type single crystalline, silicon layer, with a <100> crystallographic orientation, having a resistivity between about 15 to 25 ohm - cm, and a thickness between about 500 to 2000 Angstroms.

Claim 4

The method of claim 1, wherein said first insulator layer is silicon dioxide, thermally grown in an oxygen--steam ambient, at a temperature between about 800° to 1000° C., to a thickness between about 40 to 200 Angstroms.

Claim 5

The method of claim 1, wherein said polysilicon layer is deposited intrinsically, using LPCVD processing, at a temperature between about 500° to 650° C., to a thickness between about 1200 to 3000 Angstroms.

Claim 6

The method of claim 1, wherein said first conductivity imparting dopant is phosphorous, ion implanted at an energy between about 50 to 100 Kev., at a dose between about 1E14 to 1E16 atoms/cm 2 .

Claim 7

The method of claim 1, wherein said polysilicon layer is patterned using reactive ion etching using a chlorine based etch chemistry, resulting in said polysilicon gate structure with a width between about 0.1 to 1.0 micrometers.

Claim 8

The method of claim 1, wherein said second conductivity imparting dopant is arsenic or phosphorous, ion implanted at an energy between about 30 to 80 Kev., at a dose between about 1E12 to 1E14 atoms/cm 2 .

Claim 9

The method of claim 1, wherein said second insulator layer is silicon oxide, deposited using either LPCVD or PECVD processing, at a temperature between about 600° to 800° C., to a thickness between about 800 to 2500 Angstroms.

Claim 10

The method of claim 1, wherein said third conductivity imparting dopant is arsenic, ion implanted at an energy between about 30 to 80 Kev., at a dose between about 1E14 to 1E16 atoms/cm 2 .

Claim 11

A process for fabricating, lateral bipolar junction transistors and MOSFET devices, in a layer of silicon on insulator, on a semiconductor substrate, comprising the steps of: providing said semiconductor substrate; providing said silicon on insulator layer, on said semiconductor substrate; growing field oxide regions on specific areas of said silicon on insulator layer; growing a first insulator layer on surface of said silicon on insulator layer, not covered by said field oxide regions; depositing a polysilicon layer on said first insulator layer and on said field oxide regions; ion implanting a first conductivity imparting dopant into said polysilicon layer; photoresist masking to expose regions of said silicon on insulator layer; ion implanting a second conductivity imparting dopant into said exposed regions of said silicon on insulator layer, not covered by said photoresist masking, not covered by said field oxide regions and not covered by said polysilicon gate structure, to form lightly doped collector region of said lateral bipolar transistor, and to form lightly doped source and drain region of said MOSFET device; removal of said photoresist masking; deposition of a second insulator layer on said silicon on insulator layer, on said field oxide region, and on said polysilicon gate structure; anisotropic etching of said second insulator layer to form insulator sidewall spacer on sides of said polysilicon gate structure; ion implanting a third conductivity imparting dopant into areas of said silicon on insulator, not covered by said field oxide regions, not covered by said polysilicon gate structure, and not covered by said insulator sidewall spacer, to form heavily doped emitter and heavily doped collector regions of said lateral bipolar junction transistor, and to form heavily doped source and drain regions of said MOSFET device; deposition of a third insulator layer on said silicon on insulator layer, on said polysilicon gate structure, and on field oxide regions; opening contact holes in said third insulator layer to said heavily doped emitter, to said heavily doped collector, and to base regions, of said lateral bipolar junction transistor, and to said heavily doped source and drain regions, and to said polysilicon gate structure of said MOSFET device; deposition of metal on said third insulator layer, and on said heavily doped emitter, on said heavily doped collector, and on said base region, of said lateral bipolar junction transistor, exposed in said contact hole, and on said heavily doped source and drain region, and on said polysilicon gate structure, of said MOSFET device, exposed in said contact hole; and forming metal contact structures to said heavily doped emitter, to said heavily doped collector, and to said base regions, of said lateral bipolar junction transistor, and to said heavily doped source and drain regions, and to said polysilicon gate structure of said MOSFET device.

Claim 12

A process for fabricating, lateral bipolar junction transistors and MOSFET devices, in a layer of silicon on insulator, on a semiconductor substrate, comprising the steps of: providing said semiconductor substrate; providing said silicon on insulator layer, on said semiconductor substrate; growing field oxide regions on specific areas of said silicon on insulator layer; growing a first insulator layer on surface of said silicon on insulator layer, not covered by said field oxide regions; depositing a polysilicon layer on said first insulator layer and on said field oxide regions; ion implanting a first conductivity imparting dopant into said polysilicon layer; photoresist masking to expose regions of said silicon on insulator layer; ion implanting a second conductivity imparting dopant into said exposed regions of said silicon on insulator layer, not covered by said photoresist masking, not covered by said field oxide regions and not covered by said polysilicon gate structure, to form lightly doped collector region of said lateral bipolar transistor, and to form lightly doped source and drain region of said MOSFET device; removal of said photoresist masking; deposition of a second insulator layer on said silicon on insulator layer, on said field oxide region, and on said polysilicon gate structure; anisotropic etching of said second insulator layer to form insulator sidewall spacer on sides of said polysilicon gate structure; ion implanting a third conductivity imparting dopant into areas of said silicon on insulator, not covered by said field oxide regions, not covered by said polysilicon gate structure, and not covered by said insulator sidewall spacer, to form heavily doped emitter and heavily doped collector regions of said lateral bipolar junction transistor, and to form heavily doped source and drain regions of said MOSFET device; deposition of a third insulator layer on said silicon on insulator layer, on said polysilicon gate structure, and on field oxide regions; opening contact holes in said third insulator layer to said heavily doped emitter, to said heavily doped collector, and to base regions, of said lateral bipolar junction transistor, and to said heavily doped source and drain regions, and to said polysilicon gate structure of said MOSFET device; deposition of metal on said third insulator layer, and on said heavily doped emitter, on said heavily doped collector, and on said base region, of said lateral bipolar junction transistor, exposed in said contact hole, and on said heavily doped source and drain region, and on said polysilicon gate structure, of said MOSFET device, exposed in said contact hole; and forming metal contact structures to said heavily doped emitter, to said heavily doped collector, and to said base regions, of said lateral bipolar junction transistor, and to said heavily doped source and drain regions, and to said polysilicon gate structure of said MOSFET device.

Claim 13

The method of claim 10, wherein said silicon on insulator layer is produced via the SIMOX process, resulting in a P type, single crystalline silicon layer, having a <100> crystallographic orientation, with a resistivity between about 15 to 25 ohm - cm, and a thickness between about 500 to 2000 Angstroms.

Claim 14

The method of claim 10, wherein said first insulator layer is silicon dioxide, thermally grown in an oxygen-steam ambient, at a temperature between about 800° to 1100° C., to a thickness between about 40 to 200 Angstroms.

Claim 15

The method of claim 10, wherein said polysilicon layer is deposited using LPCVD processing, at a temperature between about 500° to 650° C., to a thickness between about 1200 to 3000 Angstroms.

Claim 16

The method of claim 10, wherein said first conductivity imparting dopant is phosphorous, ion implanted at an energy between about 50 to 100 Kev., at a dose between about 1E14 to 1E16 atoms/cm 2 .

Claim 17

The method of claim 10, wherein said polysilicon layer is patterned via reactive ion etching, using a chlorine etch chemistry, to form said polysilicon gate structure with a width between about 0.1 to 1.0 micrometers.

Claim 18

The method of claim 10, wherein said second conductivity imparting dopant, used to form said lightly doped collector region of said lateral bipolar junction transistor, and to form lightly doped source and drain regions of said MOSFET device, is arsenic, or phosphorous, ion implanted at an energy between about 30 to 80 Kev., at a dose between about 1E12 to 1E14 atoms/cm 2 .

Claim 19

The method of claim 10, wherein said second insulator layer is silicon oxide, deposited using either LPCVD or PECVD processing, at a temperature between about 600° to 800° C., to a thickness between about 800 to 2500 Angstroms.

Claim 20

The method of claim 10, wherein said third conductivity imparting dopant, used to form said heavily doped emitters and said heavily doped collector regions of said lateral bipolar junction transistor, and to form said heavily doped source and drain regions of said MOSFET device, is arsenic, ion implanted at an energy between about 30 to 80 Kev., at a dose between about 1E14 to 1E16 atoms/cm 2 .