US5567268A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma processing apparatus and method for carrying out plasma processing by using such plasma processing apparatus
Assignee: Sony Corp
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Filing: 1995-01-19
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Granted: 1996-10-22
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Expires: 2015-01-19
Abstract
Abstract A helicon wave plasma producing section is provided in the top area of process chamber, and ICP (Inductively Coupled Plasma) producing section is provided in the area on the downstream side thereof. Source power is supplied from a common plasma excitation RF power supply through control means to loop antenna in the former and multi-turn antenna in the latter. Thus, helicon wave plasma diffused from a bell-jar and inductively coupled plasma newly dissociated and produced by inductively coupled discharge are caused to coexist to carry out plasma processing, thereby making it possible to conduct control of ion/radical production ratio. Thus, higher accuracy plasma processing can be carried. Further, when applied to dry etching, ion assist mechanism is caused to effectively function to permit implementation of satisfactory high speed anisotropic processing as well.
Inventors
- 👤 Shingo Kadomura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 06:04
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/321; H01J37/3211; H01J37/32137; H01J37/32155; H01J37/32165; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P72/00; H10P72/04; H10P72/0402
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
102 words
A plasma processing apparatus comprising: a vacuum vessel for containing a wafer; a helicon wave plasma producing section having a plasma production chamber circumferentially surrounded by a first high frequency antenna and magnetic field producing means and connected to the vacuum vessel, and adapted for supplying helicon wave plasma into the vacuum vessel; an inductively coupled plasma producing section having a second high frequency antenna which circumferentially surrounds the vacuum vessel, and adapted for producing inductively coupled plasma within the vacuum vessel; and control means for controlling operations of the helicon wave plasma producing section and the inductively coupled plasma producing section.
Claim 2
Dependent Claim
102 words
A plasma processing apparatus comprising: a vacuum vessel for containing a wafer; a helicon wave plasma producing section having a plasma production chamber circumferentially surrounded by a first high frequency antenna and magnetic field producing means and connected to the vacuum vessel, and adapted for supplying helicon wave plasma into the vacuum vessel; an inductively coupled plasma producing section having a second high frequency antenna which circumferentially surrounds the vacuum vessel, and adapted for producing inductively coupled plasma within the vacuum vessel; and control means for controlling operations of the helicon wave plasma producing section and the inductively coupled plasma producing section.
Claim 3
Dependent Claim
35 words
A plasma processing apparatus as defined in claim 1, wherein the second high frequency antenna is symmetrically wound with axial direction of magnetic field produced by the magnetic field producing means being as a center.
Claim 4
Dependent Claim
38 words
A plasma processing apparatus as defined in claim 1, wherein auxiliary magnetic field producing means for converging divergence magnetic field in the vicinity of the position where the wafer is held is circumferentially provided outside the vacuum vessel.
Claim 5
Dependent Claim
34 words
A plasma processing apparatus as defined in claim 1, wherein the control means includes a switch capable of carrying out simultaneous operation or time series operation of the first and second high frequency antennas.
Claim 6
Dependent Claim
44 words
A plasma processing apparatus as defined in claim 1, wherein the control means includes phase control means for allowing phases of high frequency powers of the same frequency respectively applied to the first and second high frequency antennas to be shifted to each other.
Claim 7
Dependent Claim
32 words
A plasma processing method wherein the plasma processing apparatus as defined in claim 1, is used to carry out a plasma processing with respect to the wafer contained with the vacuum vessel.
Claim 8
Dependent Claim
39 words
A plasma processing method wherein the plasma processing apparatus as defined in claim 1 is used to carry out dry etching of the wafer as the plasma processing while controlling production ratio of chemical species within the vacuum vessel.
Claim 9
Dependent Claim
44 words
A plasma processing apparatus as defined in claim 4, wherein the control means includes phase control means for allowing phases of high frequency powers of the same frequency respectively applied to the first and second high frequency antennas to be shifted to each other.
Claim 10
Dependent Claim
39 words
A plasma processing method wherein the plasma processing apparatus as defined in claim 5 is used to carry out dry etching of the wafer as the plasma processing while controlling production ratio of chemical species within the vacuum vessel.
Claim 11
Dependent Claim
39 words
A plasma processing method wherein the plasma processing apparatus as defined in claim 8 is used to carry out dry etching of the wafer as the plasma processing while controlling production ratio of chemical species within the vacuum vessel.
Claim 12
Dependent Claim
34 words
A plasma processing apparatus as defined in claim 1, wherein the control means includes a switch capable of carrying out simultaneous operation and time series operation of the first and second high frequency antennas.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-10-22 | 2000-04-22 | 2000-10-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-10-22 | 2004-04-22 | 2004-10-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-10-22 | 2008-04-22 | 2008-10-22 | $7700.00 | Window Closed / Lapsed |