US5566104A
Expired / Lapsed
US
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Memory cell layout structure for a semiconductor memory device
Assignee: Renesas Electronics Corp
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Filing: 1995-06-05
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Granted: 1996-10-15
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Expires: 2015-06-05
Abstract
Abstract A plurality of memory cells are arranged spaced by an equal distance along one direction on a main surface of a semiconductor substrate, thus forming a first memory cell group, and a second memory cell group is arranged adjacent to the first memory cell group. In the second memory cell group, a plurality of memory cells are arranged spaced by the same distance as the first memory cell group, with central position of each memory cell of the second memory cell group being shifted by 1/6 with respect to the central position of each memory cell of the first memory cell group. Bit line pair and word lines are provided in a single layer, detouring storage node contacts.
Inventors
- 👤 Hiroki Shinkawata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:08
CPC Classifications
H; H10; H10B; H10B12/00; G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/4063; G11C11/407; G11C11/409; G11C11/4097; G11C5/00; G11C5/02; G11C5/06
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
129 words
A memory cell layout structure for a semiconductor memory device, comprising: a semiconductor substrate; a first memory cell group including a plurality of first memory cells, said first cells arranged spaced by an equal distance between a central position of each first cell along one direction on a main surface of said semiconductor substrate; and a second memory cell group adjacent to said first memory cell group, including a plurality of second memory cells, said second cells arranged spaced apart by the same distance between a central position of each said second cell as in said first memory cell group, with the central position of each second memory cell being shifted by 1/6 pitch in said one direction with respect to the central position of each first, memory cell.
Claim 2
Dependent Claim
129 words
A memory cell layout structure for a semiconductor memory device, comprising: a semiconductor substrate; a first memory cell group including a plurality of first memory cells, said first cells arranged spaced by an equal distance between a central position of each first cell along one direction on a main surface of said semiconductor substrate; and a second memory cell group adjacent to said first memory cell group, including a plurality of second memory cells, said second cells arranged spaced apart by the same distance between a central position of each said second cell as in said first memory cell group, with the central position of each second memory cell being shifted by 1/6 pitch in said one direction with respect to the central position of each first, memory cell.
Claim 3
Dependent Claim
42 words
The memory cell layout structure for a semiconductor memory device according to claim 1, wherein a plurality of memory array units each including said first memory cell group and said second memory cell group are combined to form a prescribed rectangular shape.
Claim 4
Dependent Claim
79 words
The memory cell layout structure for a semiconductor memory device according to claim 1, wherein each of said first and second memory cells includes: one switching transistor, one capacitor, and a storage node contact for connecting a first electrode of said switching transistor to said capacitor; and wherein a bit line pair is formed on the main surface of said semiconductor substrate which is connected to a second electrode of said switching transistor and detours said storage node contact.
Claim 5
Dependent Claim
29 words
The memory cell layout structure for a semiconductor memory device according to claim 3, wherein each bit line of said bit line pair has a folded bit line structure.
Claim 6
Dependent Claim
50 words
The memory cell layout structure for a semiconductor memory device according to claim 3, wherein a word line is formed on said semiconductor substrate to be connected to an input electrode of said switching transistor, crossing a bit line of said bit line pair and detouring said storage node contact.
Claim 7
Dependent Claim
28 words
The memory cell layout structure for a semiconductor memory device according to claim 5, wherein said word line is formed bent every time it crosses said bit line.
Claim 8
Dependent Claim
28 words
The memory cell layout structure for a semiconductor memory device according to claim 5, wherein said word line is formed bent every time it crosses several bit lines.
Claim 9
Dependent Claim
32 words
The memory cell layout structure for a semiconductor memory device according to claim 3, wherein said capacitor is formed in a layer upper than said bit line pair and said switching transistor.
Claim 10
Dependent Claim
27 words
The memory cell layout structure for a semiconductor memory device according to claim 3, wherein said capacitor includes an insulating film which is highly dielectric or ferroelectric.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1999-10-15 | 2000-04-15 | 2000-10-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-10-15 | 2004-04-15 | 2004-10-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-10-15 | 2008-04-15 | 2008-10-15 | $7700.00 | Window Closed / Lapsed |