Patent US5563448A successfully refreshed from Google Patents.
US5563448A
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Ohmic contact structure of a highly integrated semiconductor device having two resistance control layers formed between a metal electrode and the substrate
Assignee: Samsung Electronics Co Ltd
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Filing: 1994-03-02
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Granted: 1996-10-08
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Expires: 2014-03-02
Abstract
Abstract An ohmic contact structure for connection of a metal electrode to a highly integrated semiconductor device and a method for making the same. A contact hole is selectively formed in an insulating layer. A contact structure of a hetero-junction of Ge and Si1-xGex whose bandgap is lower than that of the underlying substrate material is formed between the interface of the metal electrode and the semiconductor substrate. The hetero-junction structure minimizes stress and strain between the metal electrode and the semiconductor substrate. The ohmic contact structure lowers the resistance of electronic lines and increases the reliability of integrated semiconductor devices.
Inventors
- 👤 Sangin Lee
- 👤 Soonoh Park
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 04:55
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/036; H10D; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10D64/60; H10D64/62; H10W20/035
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
107 words
An ohmic contact structure of a semiconductor device, comprising: a semiconductor substrate; a junction region doped with an impurity on said semiconductor substrate; a first resistance control layer having a reduced resistivity and selectively provided on a contact hole over said junction region with a material of a heterojunction structure whose band gap is narrower than that of a material of said semiconductor substrate; a second resistance control layer formed of Ge, having a reduced resistivity, and having a work function which is lower than that of said first resistance control layer; and a conductive layer forming a wiring electrode provided on said second resistance control layer.
Claim 2
Dependent Claim
107 words
An ohmic contact structure of a semiconductor device, comprising: a semiconductor substrate; a junction region doped with an impurity on said semiconductor substrate; a first resistance control layer having a reduced resistivity and selectively provided on a contact hole over said junction region with a material of a heterojunction structure whose band gap is narrower than that of a material of said semiconductor substrate; a second resistance control layer formed of Ge, having a reduced resistivity, and having a work function which is lower than that of said first resistance control layer; and a conductive layer forming a wiring electrode provided on said second resistance control layer.
Claim 3
Dependent Claim
22 words
The ohmic contact structure according to claim 1, wherein: said first resistance control layer is formed of Si 1-x Ge x .
Claim 4
Dependent Claim
23 words
The ohmic contact structure according to claim 2, wherein: said x of said Si 1-x Ge x is within a range of 0<×<1.
Claim 5
Dependent Claim
42 words
The ohmic contact structure according to claim 1, further comprising: at least one barrier layer inserted between said conductive layer and second resistance control layer, said at least one barrier layer preventing a reaction between said junction region and said conductive layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-10-08 | 2000-04-08 | 2000-10-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-10-08 | 2004-04-08 | 2004-10-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-10-08 | 2008-04-08 | 2008-10-08 | $7700.00 | Window Closed / Lapsed |