Magnetoresistive sensor utilizing a sensor material with a perovskite-like crystal structure

Claim 1

A magnetoresistive sensor having a layer system comprising at least two layers, including: a first layer; and a second layer; wherein each of said first and second layers comprises a sensor material that possesses a perovskite-like crystal structure and exhibits an increased magnetoresistive effect, such that the sensor material of each of said first and second layers has a composition based on (A 1 ) 1-x (A2) x MnO z , wherein A1 is a trivalent constituent which is selected from a group of the lanthanides including lanthanum (La), or from yttrium (Y), wherein A2 is a bivalent constituent selected from a group of alkaline-earth metals, or from lead (Pb), and wherein: 0.1≦x≦0.9 and 2.0≦z≦3.5; wherein the sensor material of the second layer of the layer system differs, in terms of proportion and/or element of at least one of its constituents A1, A2, Mn, and O, from the sensor material of the first layer of the layer system, a temperature correlation of the electrical resistance of the sensor materials of said first and second layer being different and compensating at least partly for one another so that the temperature correlation of the electrical resistance of the layer system is reduced with respect to a temperature correlation of the electrical resistance of each individual layer.