US5561632A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Nonvolatile semiconductor flash memory
Assignee: Sony Corp
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Filing: 1995-01-20
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Granted: 1996-10-01
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Expires: 2015-01-20
Abstract
Abstract A flash EEPROM, wherein provision is made of an auxiliary bit portion connecting nonvolatile memories in parallel with bit lines of a memory array portion and a spare row decoder for controlling addresses of a redundant memory portion, which records the cumulative number of cycles of rewriting and erasure for each word line in the nonvolatile memories, judges from the stored cumulative number of cycles if the number of cycles of a sector has reached a limit value, and, when reaching it, replaces the word line with a redundant word line so as to prolong the life of the memory even when the cumulative number of cycles of a specific word line has reached a limit value and which stores the data in accordance with different phases when the number of the data "1" or "0" is greater than or less than a predetermined number at the time of writing data and fetches the stored information based on the phase information at the time of reading data so as to reduce the drain disturbances.
Inventors
- 👤 Kenshiro Arase
- 👤 Akira Nakagawara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 07:27
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/08; G11C29/00; G11C29/70; G11C29/76; G11C29/765; G11C16/24; G11C16/26; G11C16/34; G11C16/349; G11C16/3495; G11C29/78; G11C29/80; G11C29/816; G11C29/82; G11C29/88; G11C5/00; G11C5/06; G11C5/063; G06; G06F; G06F11/00; G06F11/07; G06F11/0703; G06F11/0751; G06F11/0754; G06F11/076; G06F2201/00; G06F2201/81
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
92 words
A semiconductor nonvolatile memory which performs word line sector erasure, wherein a storing portion is provided for storing the number of cycles of rewriting and erasure for each word line and wherein a cumulative number of cycles of each word line is stored in said storing portion at each cycle of rewriting and erasure; and wherein said storing portion comprises a plurality of auxiliary bit lines provided so as to intersect said word lines and a plurality of auxiliary nonvolatile memory cells driven by the auxiliary bit lines and said word lines.
Claim 2
Dependent Claim
92 words
A semiconductor nonvolatile memory which performs word line sector erasure, wherein a storing portion is provided for storing the number of cycles of rewriting and erasure for each word line and wherein a cumulative number of cycles of each word line is stored in said storing portion at each cycle of rewriting and erasure; and wherein said storing portion comprises a plurality of auxiliary bit lines provided so as to intersect said word lines and a plurality of auxiliary nonvolatile memory cells driven by the auxiliary bit lines and said word lines.
Claim 3
Dependent Claim
43 words
A semiconductor nonvolatile memory as set forth in claim 1, wherein the number (m) of said auxiliary bit lines and the number (m×number of word lines) of said auxiliary nonvolatile memory cells define the bit length of the cumulative number of cycles stored.
Claim 4
Dependent Claim
64 words
A semiconductor nonvolatile memory as set forth in claim 1, further comprising at least one redundant word line to which memory cells are connected in parallel and a circuit for cutting off a word line and replacing said word line by a redundant word line when said cumulative number of cycles of said word line stored in said storing portion reaches a preset value.
Claim 5
Dependent Claim
109 words
A semiconductor nonvolatile memory which performs word line sector erasure, wherein a storing portion is provided for storing the number of cycles of rewriting and erasure for each word line and wherein a cumulative number of cycles of each word line is stored in said storing portion at each cycle of rewriting and erasure; and further comprising at least one redundant word line to which memory cells are connected in parallel and a circuit for cutting off a word line and replacing said word line by a redundant word line when said cumulative number of cycles of the word line stored in said storing portion reaches a preset value.
Claim 6
Dependent Claim
109 words
A semiconductor nonvolatile memory which performs word line sector erasure, wherein a storing portion is provided for storing the number of cycles of rewriting and erasure for each word line and wherein a cumulative number of cycles of each word line is stored in said storing portion at each cycle of rewriting and erasure; and further comprising at least one redundant word line to which memory cells are connected in parallel and a circuit for cutting off a word line and replacing said word line by a redundant word line when said cumulative number of cycles of the word line stored in said storing portion reaches a preset value.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-10-01 | 2000-04-01 | 2000-10-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-10-01 | 2004-04-01 | 2004-10-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-10-01 | 2008-04-01 | 2008-10-01 | $7700.00 | Window Closed / Lapsed |