US5553036A
Expired / Lapsed
US
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Apparatus and method for writing and reading digital information on a magnetic memory including a superconducting material
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1991-03-22
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Granted: 1996-09-03
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Expires: 2011-03-22
Abstract
Abstract An apparatus and a method for writing and reading digital information on a magnetic memory are disclosed. In the apparatus, no mechanical contact between the memory and a magnetic detection means is made because the magnetic state of a respective domain is detected by detecting change of the whole magnetic fluxes induced by entire domains formed on the memory. The writing and reading operation are carried out by scanning the domain with beam irradiation in order to destruct superconductivity or ferromagnetic characteristics of the domain resulting in trapping or releasing of magnetic fluxes. The change in magnetic flux is detected by the detection means.
Inventors
- 👤 Yasuhiko Takemura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 10:19
CPC Classifications
G; G11; G11B; G11B5/00; G11B5/127; G11B5/33; G11B5/62; G11B5/64; G11B5/65; G11B5/658; G11B5/73; G11B5/739; G11B5/73911; G11B5/73921; G11B5/74; G11B9/00; G11B2005/0002; G11B2005/0032; G11B2005/0034; G11B2005/0037
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
60 words
A method for writing digital information on a magnetic memory comprising the steps of: inserting magnetic fluxes into storage domains formed on a memory consisting of a superconducting material by pinning effect; and selectively and sequentially irradiating said storage domains formed on said memory and having magnetic fluxes inserted therein for heating them beyond the critical temperature of said material.
Claim 2
Independent Claim
60 words
A method for writing digital information on a magnetic memory comprising the steps of: inserting magnetic fluxes into storage domains formed on a memory consisting of a superconducting material by pinning effect; and selectively and sequentially irradiating said storage domains formed on said memory and having magnetic fluxes inserted therein for heating them beyond the critical temperature of said material.
Claim 3
Independent Claim
19 words
The method for writing digital information as claimed in claim wherein said irradiation is carried out with laser beams.
Claim 4
Dependent Claim
20 words
The method for writing digital information as claimed in claim 1 wherein said irradiation is carried out with electron beams.
Claim 5
Independent Claim
135 words
A method for reading digital information on a magnetic memory comprising the steps of: scanning superconducting storage domains having non-superconducting openings therein and formed on a memory consisting of a superconducting material in which magnetic fluxes have been selectively trapped by said storage domains in accordance with information stored in said memory, said scanning being performed in a magnetic field having the same direction to the magnetic fluxes, said scanning further being carded out by irradiation in order to cause phase transition of said material between its superconducting phase and its normal conducting phase through elevation and fall of the temperature of the domain being irradiated; and detecting change in magnetic fluxes induced by said memory during said scanning, wherein the digital information in said magnetic memory is determined from said change in magnetic fluxes.
Claim 6
Independent Claim
135 words
A method for reading digital information on a magnetic memory comprising the steps of: scanning superconducting storage domains having non-superconducting openings therein and formed on a memory consisting of a superconducting material in which magnetic fluxes have been selectively trapped by said storage domains in accordance with information stored in said memory, said scanning being performed in a magnetic field having the same direction to the magnetic fluxes, said scanning further being carded out by irradiation in order to cause phase transition of said material between its superconducting phase and its normal conducting phase through elevation and fall of the temperature of the domain being irradiated; and detecting change in magnetic fluxes induced by said memory during said scanning, wherein the digital information in said magnetic memory is determined from said change in magnetic fluxes.
Claim 7
Dependent Claim
20 words
The method for reading digital information as claimed in claim 4 wherein said irradiation is carried out with laser beams.
Claim 8
Dependent Claim
20 words
The method for reading digital information as claimed in claim 4 wherein said irradiation is carried out with electron beams.
Claim 9
Independent Claim
78 words
A method for writing digital information on a magnetic memory comprising the steps of: generating a magnetic flux in the magnetic memory by flowing superconducting current through a continuous superconducting line consisting of a superconducting material in which a plurality of storage domains are formed around non-superconducting openings; selectively and sequentially irradiating said storage domains formed on said memory for heating them beyond the critical temperature of said material; and removing said superconducting current from said superconducting line.
Claim 10
Independent Claim
78 words
A method for writing digital information on a magnetic memory comprising the steps of: generating a magnetic flux in the magnetic memory by flowing superconducting current through a continuous superconducting line consisting of a superconducting material in which a plurality of storage domains are formed around non-superconducting openings; selectively and sequentially irradiating said storage domains formed on said memory for heating them beyond the critical temperature of said material; and removing said superconducting current from said superconducting line.
Claim 11
Independent Claim
63 words
A method for writing digital information on a magnetic memory comprising the steps of: generating a magnetic field in the magnetic memory not more than the lower critical field of a superconducting material: and selectively and sequentially irradiating storage domains having non-superconducting openings therein formed on a memory consisting of said superconducting material for heating them beyond the critical temperature of said material.
Claim 12
Independent Claim
63 words
A method for writing digital information on a magnetic memory comprising the steps of: generating a magnetic field in the magnetic memory not more than the lower critical field of a superconducting material: and selectively and sequentially irradiating storage domains having non-superconducting openings therein formed on a memory consisting of said superconducting material for heating them beyond the critical temperature of said material.
Claim 13
Dependent Claim
20 words
The method for writing digital information as claimed in claim 8 wherein said irradiation is carried out with laser beams.
Claim 14
Dependent Claim
20 words
The method for writing digital information as claimed in claim 8 wherein said irradiation is carried out with electron beams.
Claim 15
Independent Claim
110 words
A method for reading digital information on a magnetic memory comprising the steps of: scanning storage domains formed on a memory consisting of a superconducting material in which magnetic fluxes have been selectively trapped by said storage domains in accordance with information stored in said memory, said scanning being carried out by irradiation in order to cause phase transition of said material from its superconducting phase to its normal conducting phase through elevation of the temperature of the domain being irradiated; and detecting change in magnetic fluxes induced by said memory during said scanning, wherein the digital information in said magnetic memory is determined from said change in magnetic fluxes.
Claim 16
Independent Claim
110 words
A method for reading digital information on a magnetic memory comprising the steps of: scanning storage domains formed on a memory consisting of a superconducting material in which magnetic fluxes have been selectively trapped by said storage domains in accordance with information stored in said memory, said scanning being carried out by irradiation in order to cause phase transition of said material from its superconducting phase to its normal conducting phase through elevation of the temperature of the domain being irradiated; and detecting change in magnetic fluxes induced by said memory during said scanning, wherein the digital information in said magnetic memory is determined from said change in magnetic fluxes.
Claim 17
Dependent Claim
20 words
The method for reading digital information as claimed in claim 11 wherein said irradiation is carried out with laser beams.
Claim 18
Dependent Claim
20 words
The method for reading digital information as claimed in claim 11 wherein said irradiation is carried out with electron beams.
Claim 19
Independent Claim
92 words
An apparatus for writing and reading digital information on a magnetic memory comprising: a memory consisting of a superconducting material in which magnetic fluxes are selectively trapped by a number of storage domains formed therein in accordance with information to be stored in said memory; a magnetic field detection means for detecting the change in magnetic fluxes in one direction throughout said memory; a beam irradiation means for selectively irradiating one of said storage domains with a beam; and a magnetic field application device for applying a magnetic field to said memory.
Claim 20
Independent Claim
92 words
An apparatus for writing and reading digital information on a magnetic memory comprising: a memory consisting of a superconducting material in which magnetic fluxes are selectively trapped by a number of storage domains formed therein in accordance with information to be stored in said memory; a magnetic field detection means for detecting the change in magnetic fluxes in one direction throughout said memory; a beam irradiation means for selectively irradiating one of said storage domains with a beam; and a magnetic field application device for applying a magnetic field to said memory.
Claim 21
Dependent Claim
34 words
The apparatus for writing and reading digital information as claimed in claim 14 further comprising a cooling system for cooling said memory to a temperature lower than the critical temperature of the superconducting material.
Claim 22
Dependent Claim
25 words
The apparatus for writing and reading digital information as claimed in claim 14 wherein said memory is a substrate coated with an oxide superconducting ceramic.
Claim 23
Dependent Claim
24 words
The apparatus for writing and reading digital information as claimed in claim 16 wherein said oxide superconducting ceramic is in the form of Bi2Sr2CaCu2O8.
Claim 24
Dependent Claim
39 words
The apparatus for reading and writing digital information as claimed in claim 14 wherein said magnetic field application device is provided in order to apply the magnetic field to said memory in parallel to a substrate containing said memory.
Claim 25
Dependent Claim
24 words
The apparatus for writing and reading digital information as claimed in claim 14 wherein said beam irradiation means projects laser beams to said memory.
Claim 26
Dependent Claim
24 words
The apparatus for writing and reading digital information as claimed in claim 14 wherein said beam irradiation means projects electron beams to said memory.
Claim 27
Dependent Claim
26 words
The apparatus for writing and reading digital information as claimed in claim 14 wherein said magnetic field detection means is a coil provided around said memory.
Claim 28
Dependent Claim
26 words
The apparatus for writing and reading digital information as claimed in claim 14 wherein said magnetic field detection means is a SQUID provided near said memory.
References Cited (Backward Citations)
US3413055A
Cited
US3691539A
Cited
US5270290A
Cited
JPH0194559A
Cited
JPH01159852A
Cited
JPH01190499A
Cited
US5070070A
Cited
US5377141A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1999-09-03 | 2000-03-04 | 2000-09-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-09-03 | 2004-03-04 | 2004-09-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-09-03 | 2008-03-04 | 2008-09-03 | $7700.00 | Window Closed / Lapsed |