US5550427A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Substrate contact electrode having refractory metal bump structure with reinforcement sidewall film
Assignee: NEC Corp
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Filing: 1995-03-15
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Granted: 1996-08-27
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Expires: 2015-03-15
Abstract
Abstract A fine substrate contact electrode (bump) made of a refractory metal having low resistance and sufficient mechanical strength is fabricated on a wiring substrate with a polyimide resin film serving as an electrically insulating layer. It is not the entire surface of the contact electrode that is covered with a high-resistance oxide film since the top surface of the refractory metal such as tungsten is covered with an oxidation-resistant metal film. The substrate contact electrode has a sufficient mechanical strength since the side of the tungsten bump is surrounded by a side wall reinforcement film even where the tungsten formed by the blanket chemical vapor deposition method is polycrystalline. Since the polyimide film is previously embedded before the substrate contact electrode is fabricated, the electrode can be formed on the polyimide film having a desired thickness on the entire substrate surface.
Inventors
- 👤 Yoshihiro Hayashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 02:40
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/012; H10W72/20; H10W72/01231; H10W72/01251; H10W72/01255; H10W72/019; H10W72/241; H10W72/245; H10W72/251; H10W72/252; H10W72/281; H10W72/283; H10W72/90; H10W72/921; H10W72/923; H10W72/951; H10W72/952; H10W74/00; H10W74/10; H10W74/131; H10W74/147
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
186 words
A substrate contact electrode formed on a wiring layer which is formed on a passivation oxide film on a semiconductor substrate, said semiconductor substrate having a convex portion on a part of a surface thereof and said wiring layer being covered by a polyimide resin layer, said substrate contact electrode comprising: a metal pedestal formed within said polyimide resin layer, said metal pedestal having an overall height greater than an overall height of said convex portion of said semiconductor substrate and an under surface of said metal pedestal being in contact with an upper surface of said wiring layer; a contact hole which is formed within said polyimide resin layer and which reaches an upper surface of said metal pedestal; a bump which is composed of a barrier metal film and a refractory metal film and which is partly formed within said contact hole and which is partly protruding from an upper surface of said polyimide resin layer; an oxidation-resistant metal film which covers a top surface of said bump; and a reinforcement film of insulating material which partially covers a side portion of said bump.
Claim 2
Dependent Claim
186 words
A substrate contact electrode formed on a wiring layer which is formed on a passivation oxide film on a semiconductor substrate, said semiconductor substrate having a convex portion on a part of a surface thereof and said wiring layer being covered by a polyimide resin layer, said substrate contact electrode comprising: a metal pedestal formed within said polyimide resin layer, said metal pedestal having an overall height greater than an overall height of said convex portion of said semiconductor substrate and an under surface of said metal pedestal being in contact with an upper surface of said wiring layer; a contact hole which is formed within said polyimide resin layer and which reaches an upper surface of said metal pedestal; a bump which is composed of a barrier metal film and a refractory metal film and which is partly formed within said contact hole and which is partly protruding from an upper surface of said polyimide resin layer; an oxidation-resistant metal film which covers a top surface of said bump; and a reinforcement film of insulating material which partially covers a side portion of said bump.
Claim 3
Dependent Claim
19 words
The substrate contact electrode according to claim 1, wherein said oxidation-resistant metal film is a thin gold (Au) film.
Claim 4
Dependent Claim
21 words
The substrate contact electrode according to claim 1 wherein said reinforcement film is formed on top of said polyimide resin layer.
Claim 5
Dependent Claim
37 words
The substrate contact electrode according to claim 1 wherein said metal pedestal is provided beneath said bump and serves to raise the top surface of the bump relative to an upper surface of said polyimide resin layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-08-27 | 2000-02-26 | 2000-08-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-08-27 | 2004-02-26 | 2004-08-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-08-27 | 2008-02-26 | 2008-08-27 | $7700.00 | Window Closed / Lapsed |