US4951121A
Expired / Lapsed
US
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Semiconductor device with a 3-ply gate electrode
Assignee: Toshiba Corp
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Filing: 1989-12-28
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Granted: 1990-08-21
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Expires: 2009-12-28
Abstract
Abstract A semiconductor device comprising a compound semiconductor substrate whose surface is provided with a source region, a drain region and an interventing channel region; a source electrode formed on said source region; a drain electrode mounted on said drain region; and a 3-ply gate electrode formed on said channel region and consisting of a high melting metal layer, a barrier metal layer and a gold layer in that order.
Inventors
- 👤 Motoki Furukawa
- 👤 Yoshihiro Kishita
- 👤 Tatsuro Mitani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 06:36
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/061; H10D30/0612; H10D30/0616; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6738; H10D30/674; H10D30/675; H10D64/00; H10D64/60; H10D64/64; H10D62/00; H10D62/80; H10D62/85
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
80 words
A semiconductor device comprising: a compound semiconductor substrate whose surface is provided with a source region, a drain region and an intervening channel region; a source electrode formed on said source region; a drain electrode formed on said drain region; and a 3-ply gate electrode mounted on said channel region and consisting of a high melting metal layer, a barrier metal layer and a gold layer, respectively, said high melting metal layer being TiW, and said barrier metal being Mo.
Claim 2
Dependent Claim
80 words
A semiconductor device comprising: a compound semiconductor substrate whose surface is provided with a source region, a drain region and an intervening channel region; a source electrode formed on said source region; a drain electrode formed on said drain region; and a 3-ply gate electrode mounted on said channel region and consisting of a high melting metal layer, a barrier metal layer and a gold layer, respectively, said high melting metal layer being TiW, and said barrier metal being Mo.
Claim 3
Dependent Claim
15 words
The semiconductor device according to claim 1, wherein said compound substrate is prepared from GaAs.
Claim 4
Dependent Claim
20 words
The semiconductor device according to claim 1, wherein said high melting metal forms a Shottky contact with said compound semiconductor.
Claim 5
Dependent Claim
29 words
The semiconductor device according to claim 1, wherein said channel region is an N type impurity region, and said source and drain regions are N + type impurity regions.
Claim 6
Dependent Claim
19 words
The semiconductor device according to claim 1, wherein said source and drain electrodes are prepared from an Au-Ge alloy.
References Cited (Backward Citations)
JPS5260568A
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JPS56100480A
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EP0081999A2
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-08-20 | 1994-02-19 | 1994-08-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-08-20 | 1998-02-19 | 1998-08-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-08-20 | 2002-02-19 | 2002-08-21 | $7700.00 | Window Closed / Lapsed |