Abstract A heterojunction FET disclosed herein includes a semi-insulating GaAs substrate, a buffer layer composed of an undoped In y/2 Al 1-y/2 As layer (0<y<1), and having a film thickness less than or equal to a critical film thickness, a first barrier layer composed of an undoped AlAs layer and an undoped In y Al 1-y As layer (0<y<1), a channel layer composed of an undoped In y Ga 1-y As layer (0<y<1), a second barrier layer composed of an N-type In y Al 1-y As layer (0<y<1), each layer disposed in the order mentioned, on the semi-insulating GaAs substrate, a gate electrode which is selectively disposed on the second barrier layer to form a Schottky junction, and electrodes for a drain and a source, each of which is disposed on the second barrier layer via a contact layer, with said gate electrode therebetween.
A heterojunction field-effect transistor comprising: a semi-insulating GaAs substrate; a buffer layer including an undoped In y/2 Al 1-y/2 As layer (0<y<1) being disposed on said semi-insulating GaAs substrate and having a film thickness less than or equal to a corresponding critical film thickness; a first barrier layer including an undoped AlAs layer disposed on said buffer layer and an undoped In y Al 1-y As layer disposed on said undoped AlAs layer; a channel layer including an undoped In y Ga 1-y As layer disposed on said first barrier layer; a second barrier layer including an N-type In y Al 1-y As layer disposed on said channel layer; a gate electrode selectively disposed on said second barrier layer to form a Schottky junction; and electrodes for a drain and a source, each of said electrodes being disposed on said barrier layer via a contact layer, wherein y stands for an atomic ratio.
Claim 2
Dependent Claim
153 words
A heterojunction field-effect transistor comprising: a semi-insulating GaAs substrate; a buffer layer including an undoped In y/2 Al 1-y/2 As layer (0<y<1) being disposed on said semi-insulating GaAs substrate and having a film thickness less than or equal to a corresponding critical film thickness; a first barrier layer including an undoped AlAs layer disposed on said buffer layer and an undoped In y Al 1-y As layer disposed on said undoped AlAs layer; a channel layer including an undoped In y Ga 1-y As layer disposed on said first barrier layer; a second barrier layer including an N-type In y Al 1-y As layer disposed on said channel layer; a gate electrode selectively disposed on said second barrier layer to form a Schottky junction; and electrodes for a drain and a source, each of said electrodes being disposed on said barrier layer via a contact layer, wherein y stands for an atomic ratio.
Claim 3
Dependent Claim
18 words
The field-effect transistor as defined in claim 1, wherein said y is in a range defined by 0<y≦0.5.
Claim 4
Dependent Claim
34 words
The field-effect transistor as defined in claim 2, wherein each of said undoped AlAs layer and said undoped In y Ga 1-y As layer has a film thickness greater than a critical film thickness.