Patent US5550070A successfully refreshed from Google Patents.
US5550070A
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Method for producing crystalline semiconductor film having reduced concentration of catalyst elements for crystallization and semiconductor device having the same
Assignee: Sharp Corp
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Filing: 1994-12-16
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Granted: 1996-08-27
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Expires: 2014-12-16
Abstract
Abstract A method for producing a semiconductor film, includes the steps of: (a) forming an amorphous semiconductor film on a substrate having a surface with an insulating property; (b) introducing a material for accelerating crystallization of the amorphous semiconductor film into at least a part of the amorphous semiconductor film; (c) crystallizing the amorphous semiconductor film by heating to obtain a crystalline semiconductor film from the amorphous semiconductor film; and (d) oxidizing a surface of the crystalline semiconductor film to form a semiconductor oxide film containing a part of the material for accelerating the crystallization on the surface of the crystalline semiconductor film.
Inventors
- 👤 Takashi Funai
- 👤 Naoki Makita
- 👤 Yoshitaka Yamamoto
- 👤 Tatsuo Morita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 05:02
CPC Classifications
H; H10; H10P; H10P34/00; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3806; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3808; H10P14/3816; Y; Y10; Y10S; Y10S148/00; Y10S148/016
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
108 words
A method for producing a semiconductor film, comprising the steps of: (a) forming an amorphous semiconductor film on a substrate having a surface with an insulating property; (b) introducing a material for accelerating crystallization of the amorphous semiconductor film into at least a part of the amorphous semiconductor film; (c) crystallizing the amorphous semiconductor film by heating to obtain a crystalline semiconductor film from the amorphous semiconductor film; (d) oxidizing a surface of the crystalline semiconductor film to form a semiconductor oxide film containing a part of the material for accelerating the crystallization on the surface of the crystalline semiconductor film; and (e) removing the semiconductor oxide film.
Claim 2
Independent Claim
108 words
A method for producing a semiconductor film, comprising the steps of: (a) forming an amorphous semiconductor film on a substrate having a surface with an insulating property; (b) introducing a material for accelerating crystallization of the amorphous semiconductor film into at least a part of the amorphous semiconductor film; (c) crystallizing the amorphous semiconductor film by heating to obtain a crystalline semiconductor film from the amorphous semiconductor film; (d) oxidizing a surface of the crystalline semiconductor film to form a semiconductor oxide film containing a part of the material for accelerating the crystallization on the surface of the crystalline semiconductor film; and (e) removing the semiconductor oxide film.
Claim 3
Dependent Claim
39 words
A method for producing a semiconductor film according to claim 1, further comprising a step of irradiating high energy light to the crystalline semiconductor film either between the step (d) and the step (e) or after the step (e).
Claim 4
Dependent Claim
39 words
A method for producing a semiconductor film according to claim 1, wherein, during the step (b), the material for accelerating the crystallization of the amorphous semiconductor film is introduced into the amorphous semiconductor film from an entire surface thereof.
Claim 5
Dependent Claim
27 words
A method for producing a semiconductor film according to claim 1, wherein a crystal growth direction of the crystalline semiconductor film is substantially parallel with the substrate.
Claim 6
Dependent Claim
32 words
A method for producing a semiconductor film according to claim 1, wherein, during the step (d), the crystalline semiconductor film is heated in an atmosphere containing at least oxygen or water vapor.
Claim 7
Dependent Claim
30 words
A method for producing a semiconductor film according to claim 5, wherein the atmosphere further contains one selected from the group consisting of nitric acid gas, halogen, and hydrogen halide.
Claim 8
Dependent Claim
29 words
A method for producing a semiconductor film according to claim 6, wherein the crystalline semiconductor film is heated in the atmosphere at a temperature of 650° C. or lower.
Claim 9
Dependent Claim
23 words
A method for producing a semiconductor film according to claim 5, wherein the atmosphere is kept at a pressure of about 25 arm.
Claim 10
Dependent Claim
19 words
A method for producing a semiconductor film according to claim 5, wherein the atmosphere is in a plasma state.
Claim 11
Dependent Claim
21 words
A method for producing a semiconductor film according to claim 7, wherein the crystalline semiconductor film is further irradiated with UV-rays.
Claim 12
Dependent Claim
53 words
A method for producing a semiconductor film according to claim 1, wherein, during the step (d), the crystalline semiconductor film is dipped into a solution containing ions selected from the group consisting of sulfuric acid ions, nitric acid ions, nitrous acid ions, permanganate ions, chromic acid ions, chlorine ions, and hypochlorous acid ions.
Claim 13
Dependent Claim
40 words
A method for producing a semiconductor film according to claim 1, wherein the material for accelerating the crystallization contains one selected from the group consisting of Ni, Co, Pd, Pt, Fe, Cu, Ag, Au, In, Sn, P, As, and Sb.
Claim 14
Independent Claim
119 words
A method for producing a semiconductor device, comprising the steps of: (a) forming an amorphous semiconductor film on a substrate having a surface with an insulating property; (b) introducing a material for accelerating crystallization of the amorphous semiconductor film into at least a part of the amorphous semiconductor film; (c) crystallizing the amorphous semiconductor film by heating to obtain a crystalline semiconductor film from the amorphous semiconductor film; (d) oxidizing a surface of the crystalline semiconductor film to form a semiconductor oxide film containing a part of the material for accelerating the crystallization on the surface of the crystalline semiconductor film; (e) removing the semiconductor oxide film; and (f) providing a semiconductor device region in the crystalline semiconductor film.
Claim 15
Independent Claim
119 words
A method for producing a semiconductor device, comprising the steps of: (a) forming an amorphous semiconductor film on a substrate having a surface with an insulating property; (b) introducing a material for accelerating crystallization of the amorphous semiconductor film into at least a part of the amorphous semiconductor film; (c) crystallizing the amorphous semiconductor film by heating to obtain a crystalline semiconductor film from the amorphous semiconductor film; (d) oxidizing a surface of the crystalline semiconductor film to form a semiconductor oxide film containing a part of the material for accelerating the crystallization on the surface of the crystalline semiconductor film; (e) removing the semiconductor oxide film; and (f) providing a semiconductor device region in the crystalline semiconductor film.
Claim 16
Dependent Claim
44 words
A method for producing a semiconductor device according to claim 13, further comprising a step (g) of irradiating high energy light to the crystalline semiconductor film either between the step (d) and the step (e) or between the step (e) and the step (f).
Claim 17
Dependent Claim
27 words
A method for producing a semiconductor device according to claim 13, wherein a crystal growth direction of the crystalline semiconductor film is substantially parallel with the substrate.
Claim 18
Dependent Claim
41 words
A method for producing a semiconductor device according to claim 13, wherein, in the semiconductor device region, a direction in which carriers in the crystalline semiconductor film move is substantially parallel with the crystal growth direction of the crystalline semiconductor film.
Claim 19
Dependent Claim
41 words
A method for producing a semiconductor device according to claim 13, wherein, in the semiconductor device region, a direction in which carriers in the crystalline semiconductor film move is substantially vertical to the crystal growth direction of the crystalline semiconductor film.
Claim 20
Dependent Claim
43 words
A method for producing a semiconductor device according to claim 13, wherein the semiconductor device further has a channel in the semiconductor device region, and the channel is at least provided in a region other than the part of the crystalline semiconductor film.
Claim 21
Dependent Claim
39 words
A method for producing a semiconductor device according to claim 13, wherein, during the step (b), the material for accelerating the crystallization of the amorphous semiconductor film is introduced into the amorphous semiconductor film from an entire surface thereof.
Claim 22
Dependent Claim
32 words
A method for producing a semiconductor device according to claim 13, wherein, during the step (d), the crystalline semiconductor film is heated in an atmosphere containing at least oxygen or water vapor.
Claim 23
Dependent Claim
29 words
A method for producing a semiconductor device according to claim 20, wherein the atmosphere contains one selected from the group consisting of nitric acid gas, halogen, and hydrogen halide.
Claim 24
Dependent Claim
29 words
A method for producing a semiconductor device according to claim 21, wherein the crystalline semiconductor film is heated in the atmosphere at a temperature of 650° C. or lower.
Claim 25
Dependent Claim
23 words
A method for producing a semiconductor device according to claim 22, wherein the atmosphere is kept at a pressure of about 25 atm.
Claim 26
Dependent Claim
19 words
A method for producing a semiconductor device according to claim 20, wherein the atmosphere is in a plasma state.
Claim 27
Dependent Claim
21 words
A method for producing a semiconductor device according to claim 20, wherein the crystalline semiconductor film is further irradiated with UV-rays.
Claim 28
Dependent Claim
53 words
A method for producing a semiconductor device according to claim 13, wherein, during the step (d), the crystalline semiconductor film is dipped into a solution containing ions selected from the group consisting of sulfuric acid ions, nitric acid ions, nitrous acid ions, permanganate ions, chromic acid ions, chlorine ions, and hypochlorous acid ions.
Claim 29
Dependent Claim
40 words
A method for producing a semiconductor device according to claim 13, wherein the material for accelerating the crystallization contains one selected from the group consisting of Ni, Co, Pd, Pt, Fe, Cu, Ag, Au, In, Sn, P, As, and Sb.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-08-27 | 2000-02-26 | 2000-08-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-08-27 | 2004-02-26 | 2004-08-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-08-27 | 2008-02-26 | 2008-08-27 | $7700.00 | Window Closed / Lapsed |