Multiquantum barrier structure and semiconductor laser diode

Claim 2

A multiquantum barrier structure including a superlattice structure in which a plurality of well layers and a plurality of barrier layers are alternatingly laminated, said superlattice structure comprising: a first superlattice layer comprising at least four Ga 0 .5 In 0 .5 well layers each well layer being four monolayers thick, and at least four (Al 0 .7 Ga 0 .3) 0 .5 In 0 .5 P barrier layers, each barrier layer being two monolayers thick, said well layers and barrier layers being alternatingly arranged, said first superlattice layer having a first electron reflectivity in an electron energy region; and a second superlattice layer disposed continuously with the first superlattice layer and comprising at least four Ga 0 .5 In 0 .5 P well layers, each well layer being four monolayers thick, and at least four (Al 0 .7 Ga 0 .3) 0 .5 In 0 .5 P barrier layers, each barrier layer being four monolayers thick, said well layers and barrier layers being alternatingly arranged, said second superlattice layer having a second electron reflectivity, higher than the first electron reflectivity, in the electron energy region where the first superlattice structure has the first electron reflectivity.

Claim 3

A multiquantum barrier structure including a superlattice structure in which a plurality of well layers and a plurality of barrier layers are alternatingly laminated, said superlattice structure comprising: a first superlattice layer comprising at least four Ga 0 .5 In 0 .5 P well layers, each well layer being four monolayers thick, and at least four (Al 0 .7 Ga 0 .3) 0 .5 In 0 .5 P barrier layers, each barrier layer being three monolayers thick, said well layers and barrier layers being alternatingly arranged, said first superlattice layer having a first electron reflectivity in an electron energy region; and a second superlattice layer disposed continuously with the first superlattice layer and comprising at least four Ga 0 .5 In 0 .5 P well layers, each well layer being four monolayers thick, and at least four (Al 0 .7 Ga 0 .3) 0 .5 In 0 .5 P barrier layers, each barrier layer being five monolayers thick, said well layers and barrier layers being alternatingly arranged, said second superlattice layer having a second electron reflectivity, higher than the first electron reflectivity, in the electron energy region where the first superlattice structure has the first electron reflectivity.

Claim 4

A multiquantum barrier structure including a superlattice structure in which a plurality of well layers and a plurality of barrier layers are alternatingly laminated, said superlattice structure comprising: a first superlattice layer comprising at least four Ga 0 .5 In 0 .5 P well layers, each well layer being four monolayers thick, and at least four (Al 0 .7 Ga 0 .3) 0 .5 In 0 .5 P barrier layers, each barrier layer being three monolayers thick, said well layers and barrier layers being alternatingly arranged, said first superlattice layer having a first electron reflectivity in an electron energy region; and a second superlattice layer disposed continuously with the first superlattice layer and comprising at least four Ga 0 .5 In 0 .5 P well layers, each well layer being four monolayers thick, and at least four (Al 0 .7 Ga 0 .3) 0 .5 In 0 .5 P barrier layers, each barrier layer being five monolayers thick, said well layers and barrier layers being alternatingly arranged, said second superlattice layer having a second electron reflectivity, higher than the first electron reflectivity, in the electron energy region where the first superlattice structure has the first electron reflectivity.

Claim 5

A multiquantum barrier structure including a superlattice structure in which a plurality of well layers and a plurality of barrier layers are alternatingly laminated, said superlattice structure comprising: a first superlattice layer comprising at least four Ga 0 .5 In 0 .5 P well layers, each well layer being four monolayers thick, and at least four (Al 0 .7 Ga 0 .3) 0 .5 In 0 .5 P barrier layers, each barrier layer being two monolayers thick, said well layers and barrier layers being alternatingly arranged, said first superlattice layer having a first electron reflectivity in an electron energy region; a second superlattice layer disposed continuously with the first superlattice layer and comprising at least four Ga 0 .5 In 0 .5 P well layers, each well layer being four monolayers thick, and at least four (Al 0 .7 Ga 0 .3) 0 .5 In 0 .5 P barrier layers, each barrier layer being four monolayers thick, said well layers and barrier layers being alternatingly arranged, said second superlattice layer having a second electron reflectivity, higher than the first electron reflectivity, in the electron energy region where the first superlattice structure has the first electron reflectivity; and a third superlattice layer disposed continuously with the second superlattice layer and comprising at least four Ga 0 .5 In 0 .5 P well layers, each well layer being four monolayers thick, and at least four (Al 0 .7 Ga 0 .3) 0 .5 In 0 .5 P barrier layers, each barrier layer being six monolayers thick, said well layers and barrier layers being alternatingly arranged, said third superlattice layer having a third electron reflectivity, higher than the first electron reflectivity, in the electron energy region where the first superlattice structure has the first electron reflectivity.

Claim 6

A multiquantum barrier structure including a superlattice structure in which a plurality of well layers and a plurality of barrier layers are alternatingly laminated, said superlattice structure comprising: a first superlattice layer comprising at least four Ga 0 .5 In 0 .5 P well layers, each well layer being four monolayers thick, and at least four (Al 0 .7 Ga 0 .3) 0 .5 In 0 .5 P barrier layers, each barrier layer being two monolayers thick, said well layers and barrier layers being alternatingly arranged, said first superlattice layer having a first electron reflectivity in an electron energy region; a second superlattice layer disposed continuously with the first superlattice layer and comprising at least four Ga 0 .5 In 0 .5 P well layers, each well layer being four monolayers thick, and at least four (Al 0 .7 Ga 0 .3) 0 .5 In 0 .5 P barrier layers, each barrier layer being four monolayers thick, said well layers and barrier layers being alternatingly arranged, said second superlattice layer having a second electron reflectivity, higher than the first electron reflectivity, in the electron energy region where the first superlattice structure has the first electron reflectivity; and a third superlattice layer disposed continuously with the second superlattice layer and comprising at least four Ga 0 .5 In 0 .5 P well layers, each well layer being four monolayers thick, and at least four (Al 0 .7 Ga 0 .3) 0 .5 In 0 .5 P barrier layers, each barrier layer being six monolayers thick, said well layers and barrier layers being alternatingly arranged, said third superlattice layer having a third electron reflectivity, higher than the first electron reflectivity, in the electron energy region where the first superlattice structure has the first electron reflectivity.

Claim 7

A multiquantum barrier structure including a superlattice structure in which a plurality of well layers and a plurality of barrier layers are alternatingly laminated, said superlattice structure comprising: a first superlattice layer comprising at least four Ga 0 .5 In 0 .5 P well layers, each well layer being four monolayers thick, and at least four (Al 0 .7 Ga 0 .3) 0 .5 In 0 .5 P barrier layers, each barrier layer being three monolayers thick, said well layers and barrier layers being alternatingly arranged, said first superlattice layer having a first electron reflectivity in an electron energy region; a second superlattice layer disposed continuously with the first superlattice layer and comprising at least four Ga 0 .5 In 0 .5 P well layers, each well layer being four monolayers thick, and at least four (Al 0 .7 Ga 0 .3) 0 .5 In 0 .5 P barrier layers, each barrier layer being four monolayers thick, said well layers and barrier layers being alternatingly arranged, said second superlattice layer having a second electron reflectivity, higher than the first electron reflectivity, in the electron energy region where the first superlattice structure has the first electron reflectivity; and a third superlattice layer disposed continuously with the second superlattice layer and comprising at least four Ga 0 .5 In 0 .5 P well layers, each well layer being four monolayers thick, and at least four (Al 0 .7 Ga 0 .3) 0 .5 In 0 .5 P barrier layers, each barrier layer being five monolayers thick, said well layers and barrier layers being alternatingly arranged, said third superlattice layer having a third electron reflectivity, higher than the first electron reflectivity, in the electron energy region where the first superlattice structure has the first electron reflectivity.

Claim 8

A multiquantum barrier structure including a superlattice structure in which a plurality of well layers and a plurality of barrier layers are alternatingly laminated, said superlattice structure comprising: a first superlattice layer comprising at least four Ga 0 .5 In 0 .5 P well layers, each well layer being four monolayers thick, and at least four (Al 0 .7 Ga 0 .3) 0 .5 In 0 .5 P barrier layers, each barrier layer being three monolayers thick, said well layers and barrier layers being alternatingly arranged, said first superlattice layer having a first electron reflectivity in an electron energy region; a second superlattice layer disposed continuously with the first superlattice layer and comprising at least four Ga 0 .5 In 0 .5 P well layers, each well layer being four monolayers thick, and at least four (Al 0 .7 Ga 0 .3) 0 .5 In 0 .5 P barrier layers, each barrier layer being four monolayers thick, said well layers and barrier layers being alternatingly arranged, said second superlattice layer having a second electron reflectivity, higher than the first electron reflectivity, in the electron energy region where the first superlattice structure has the first electron reflectivity; and a third superlattice layer disposed continuously with the second superlattice layer and comprising at least four Ga 0 .5 In 0 .5 P well layers, each well layer being four monolayers thick, and at least four (Al 0 .7 Ga 0 .3) 0 .5 In 0 .5 P barrier layers, each barrier layer being five monolayers thick, said well layers and barrier layers being alternatingly arranged, said third superlattice layer having a third electron reflectivity, higher than the first electron reflectivity, in the electron energy region where the first superlattice structure has the first electron reflectivity.