US5362974A
Expired / Lapsed
US
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Group II-VI material semiconductor optical device with strained multiquantum barriers
Assignee: Furukawa Electric Co Ltd
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Filing: 1993-06-09
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Granted: 1994-11-08
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Expires: 2013-06-09
Abstract
Abstract This invention provides a blue light semiconductor optical device capable of effectively oscillating in a temperature range above room temperature. A double hetero structure semiconductor optical device according to the invention is made of a compound semiconductor containing Zn and/or Cd as group II elements and S and/or Se and/or Te as group VI elements and comprises an active layer, a light confining layer and a cladding layer arranged on a semiconductor substrate as well as a multiquantum barrier structure having a strained superlattice layer in part of the cladding layer or the light confining layer for an effect of reflecting incident carriers as waves in phase conditions capable of allowing mutual enhancement of the incident and reflected waves.
Inventors
- 👤 Michinori Irikawa
- 👤 Kenichi Iga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 03:37
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/20; H01S5/2004; H01S5/2009; H01S5/2013; H01S5/30; H01S5/34; H01S5/347; Y; Y10; Y10S; Y10S977/00; Y10S977/70; Y10S977/755; Y10S977/761; Y10S977/813; Y10S977/824
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
101 words
A semiconductor optical device comprising: a semiconductor substrate; a first cladding layer formed on said semiconductor substrate; a first optical confinement layer formed on said first cladding layer; an active layer formed on said first optical confinement layer; a multiquantum barrier layer formed on said active layer; a second optical confinement layer formed on said multiquantum barrier layer; and a second cladding layer formed on said second optical confinement layer; wherein said multiquantum barrier layer comprises a strained layer superlattice of group II-VI material, and said cladding layers comprise ZnS x Se 1-x (0<x<1) or Zn x Cd 1-x S (0<x<1).
Claim 2
Dependent Claim
101 words
A semiconductor optical device comprising: a semiconductor substrate; a first cladding layer formed on said semiconductor substrate; a first optical confinement layer formed on said first cladding layer; an active layer formed on said first optical confinement layer; a multiquantum barrier layer formed on said active layer; a second optical confinement layer formed on said multiquantum barrier layer; and a second cladding layer formed on said second optical confinement layer; wherein said multiquantum barrier layer comprises a strained layer superlattice of group II-VI material, and said cladding layers comprise ZnS x Se 1-x (0<x<1) or Zn x Cd 1-x S (0<x<1).
Claim 3
Dependent Claim
22 words
The device of claim 1, wherein said multiquantum barrier layer comprises alternately formed layers of tensile strained layers and compressive strain layers.
Claim 4
Dependent Claim
32 words
The device of claim 1, wherein said multiquantum barrier layer comprises layers of Zn x Cd 1-x S y Se 1-y (0<x, y<1) and layers of ZnS x Se 1-x , (0<x<1).
Claim 5
Dependent Claim
29 words
The device of claim 1, wherein said multiquantum barrier layer comprises layers of Zn x Cd 1-x Te (0<x<1 ) and layers of ZnS x Se 1-x , (0<x<1).
Claim 6
Dependent Claim
11 words
The device of claim 1, wherein the substrate layer comprises GaAs.
Claim 7
Dependent Claim
11 words
The device of claim 1, wherein the substrate layer comprises GaP.
Claim 8
Dependent Claim
10 words
The device claim 1, wherein the substrate layer comprises InGaAs.
Claim 9
Dependent Claim
46 words
The device of claim 1, wherein the multiquantum barrier layer comprises: a first barrier layer formed on said active layer comprising two layers of ZnSe; and a second barrier layer formed on said first active layer comprising alternately disposed tensile strain layers and compressive strain layers.
Claim 10
Dependent Claim
33 words
The device of claim 8, wherein the tensile strain layers of the second barrier layer comprise ZnS x Se 1-x , (0<x<1). the compressive strain layers comprise Zn x Cd 1-x Se (0<x<1).
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1997-11-07 | 1998-05-09 | 1998-11-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-07 | 2002-05-09 | 2002-11-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-07 | 2006-05-09 | 2006-11-08 | $7700.00 | Window Closed / Lapsed |