Patent US5543347A successfully refreshed from Google Patents.
US5543347A
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Method of forming silicon film having jagged surface
Assignee: NEC Electronics Corp
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Filing: 1994-12-27
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Granted: 1996-08-06
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Expires: 2014-12-27
Abstract
Abstract First, a metal layer is deposited on a silicon film surface to form a silicide layer in an interface between the silicon film and the metal layer. Subsequently, the metal layer is all removed by etching such that silicide islands are left on the surface of the silicon film, and then the exposed silicon film surface is dry-etched by using the silicide islands as a selective mask.
Inventors
- 👤 Hideo Kawano
- 👤 Keiji Shiotani
- 👤 Masao Mikami
- 👤 Tatsuya Suzuki
- 👤 Seiichi Shishiguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:27
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712; Y; Y10; Y10S; Y10S148/00; Y10S148/138; Y10S438/00; Y10S438/964
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
67 words
A method of forming a silicon film having a jagged surface, comprising the steps of: forming a silicide layer on a silicon film surface; removing the silicide layer by etching such that a plurality of silicide islands of the silicide layer remains on the silicon film surface; and dry-etching the silicon film surface by using the silicide islands on the silicon film surface as a selective mask.
Claim 2
Independent Claim
67 words
A method of forming a silicon film having a jagged surface, comprising the steps of: forming a silicide layer on a silicon film surface; removing the silicide layer by etching such that a plurality of silicide islands of the silicide layer remains on the silicon film surface; and dry-etching the silicon film surface by using the silicide islands on the silicon film surface as a selective mask.
Claim 3
Dependent Claim
20 words
The method as set forth in claim 1, wherein the silicide layer comprises a compound of heavy metal and silicon.
Claim 4
Dependent Claim
15 words
The method as set forth in claim 2, wherein the heavy metal comprises chromium (Cr).
Claim 5
Dependent Claim
15 words
The method as set forth in claim 2, wherein the heavy metal comprises tungsten (W).
Claim 6
Dependent Claim
15 words
The method as set forth in claim 2, wherein the heavy metal comprises titanium (Ti).
Claim 7
Dependent Claim
15 words
The method as set forth in claim 1, wherein the silicon film comprises amorphous silicon.
Claim 8
Dependent Claim
14 words
The method as set forth in claim 1, wherein the silicon film comprises polysilicon.
Claim 9
Dependent Claim
26 words
The method as set forth in claim 1, wherein a concentration of phosphorus of the silicon film is not greater than 1×10 20 cm -3 .
Claim 10
Dependent Claim
34 words
The method as set forth in claim 1, wherein the silicide layer is formed by depositing a metal layer on the silicon film in an interface between the silicon film and the metal layer.
Claim 11
Independent Claim
71 words
A method of forming a silicon film having a jagged surface, comprising the steps of: depositing a metal layer on a silicon film surface; removing all of the metal layer by etching such that a plurality of silicide islands are formed on the silicon film; and dry-etching the silicon film surface from which the metal layer have been removed, using the silicide islands on the silicon surface as a selective mask.
Claim 12
Independent Claim
71 words
A method of forming a silicon film having a jagged surface, comprising the steps of: depositing a metal layer on a silicon film surface; removing all of the metal layer by etching such that a plurality of silicide islands are formed on the silicon film; and dry-etching the silicon film surface from which the metal layer have been removed, using the silicide islands on the silicon surface as a selective mask.
Claim 13
Dependent Claim
15 words
The method as set forth in claim 10, wherein the metal layer comprises heavy metal.
Claim 14
Dependent Claim
15 words
The method as set forth in claim 11, wherein the heavy metal comprises chromium (Cr).
Claim 15
Dependent Claim
15 words
The method as set forth in claim 11, wherein the heavy metal comprises tungsten (W).
Claim 16
Dependent Claim
15 words
The method as set forth in claim 11, wherein the heavy metal comprises titanium (Ti).
Claim 17
Dependent Claim
15 words
The method as set forth in claim 10, wherein the silicon film comprises amorphous silicon.
Claim 18
Dependent Claim
14 words
The method as set forth in claim 10, wherein the silicon film comprises polysilicon.
Claim 19
Dependent Claim
26 words
The method as set forth in claim 10, wherein a concentration of phosphorus of the silicon film is not greater than 1×10 20 cm -3 .
Claim 20
Independent Claim
77 words
A method of forming a silicon film having a jagged surface, comprising the steps of: depositing a metal layer on an amorphous silicon film surface; removing the metal layer by etching such that a plurality of silicide islands are formed on the silicon film; dry-etching the amorphous silicon film surface from which the metal layer has been removed, using the silicide islands on the silicon surface as a selective mask; and polycrystallizing the dry-etched amorphous silicon film.
Claim 21
Independent Claim
77 words
A method of forming a silicon film having a jagged surface, comprising the steps of: depositing a metal layer on an amorphous silicon film surface; removing the metal layer by etching such that a plurality of silicide islands are formed on the silicon film; dry-etching the amorphous silicon film surface from which the metal layer has been removed, using the silicide islands on the silicon surface as a selective mask; and polycrystallizing the dry-etched amorphous silicon film.
Claim 22
Dependent Claim
15 words
The method as set forth in claim 18, wherein the metal layer comprises heavy metal.
Claim 23
Dependent Claim
15 words
The method as set forth in claim 19, wherein the heavy metal comprises chromium (Cr).
Claim 24
Dependent Claim
15 words
The method as set forth in claim 19, wherein the heavy metal comprises tungsten (W).
Claim 25
Dependent Claim
15 words
The method as set forth in claim 19, wherein the heavy metal comprises titanium (Ti).
Claim 26
Dependent Claim
27 words
The method as set forth in claim 18, wherein a concentration of phosphorus of the amorphous silicon film is not greater than 1×10 30 cm -3 .
Claim 27
Dependent Claim
29 words
The method as set forth in claim 1, wherein the silicide layer is formed at room temperature automatically when a metal film is deposited on the silicon film surface.
Claim 28
Dependent Claim
29 words
The method as set forth in claim 10, wherein a silicide layer is formed at room temperature automatically when the metal film is deposited on the silicon film surface.
Claim 29
Dependent Claim
29 words
The method as set forth in claim 18, wherein a silicide layer is formed at room temperature automatically when the metal film is deposited on the silicon film surfaces.
Claim 30
Dependent Claim
43 words
The method as set forth in claim 10, wherein said step of removing the metal layer immediately follows said step of depositing a metal layer and said step of dry-etching the silicon film surface immediately follows said step of removing the metal layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-08-06 | 2000-02-05 | 2000-08-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-08-06 | 2004-02-05 | 2004-08-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-08-06 | 2008-02-05 | 2008-08-06 | $7700.00 | Window Closed / Lapsed |