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Patent US5541878A successfully refreshed from Google Patents.
US5541878A
Expired / Lapsed
US
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Writable analog reference voltage storage device
Assignee: Synaptics Inc
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Filing: 1994-06-27
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Granted: 1996-07-30
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Expires: 2014-06-27
Abstract
Abstract A circuit for generating N analog voltage signals for reference or bias use employs N analog floating gate storage devices. Circuitry is provided so that all floating gate storage devices can be programmed to their target voltages individually or in parallel. Electron injection circuitry is provided for injecting electrons on to and a tunneling structure is provided for removing electrons from the floating gate of each floating gate storage device. A transistor structure with a lightly doped drain is provided for control of the tunneling structure. A capacitor is connected to each floating gate node to provide control of the injection structure. A dynamic analog storage element is provided to store the target voltage for the floating gate storage device. A comparator is provided to monitor the floating gate voltage and target voltage and control tunneling and injection. A digital storage device is provided to statically store the output of the comparator. During normal operation of the voltage reference circuit, the voltage comparator is configured as a follower amplifier to buffer the analog voltage output. During normal operation of the bias reference circuit, the current comparator is configured as a current mirror to buffer the analog current output.
Inventors
- 👤 John LeMoncheck
- 👤 Timothy P. Allen
- 👤 Gunter Steinbach
- 👤 Carver A. Mead
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:09
CPC Classifications
G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/24; G05F3/242; G05F3/247; G05F1/00; G05F1/10; G05F1/46; G05F1/468; G11; G11C; G11C11/00; G11C11/56; G11C11/5621; G11C27/00; G11C27/005; G11C5/00; G11C5/14; G11C5/147; G11C16/00; G11C16/02; G11C16/06; G11C16/30; G11C2211/00; G11C2211/56; G11C2211/563; G11C2211/5634; G11C7/00; G11C7/16
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
261 words
A circuit disposed on a semiconductor substrate for generating an analog voltage signal in a semiconductor integrated circuit disposed on said semiconductor substrate, including: an analog floating gate storage device disposed on said semiconductor substrate, said analog floating gate storage device including a floating gate having a floating gate voltage thereon; a non-avalanche hot electron injection means associated with said analog floating gate device for injecting electrons onto said floating gate; electron tunneling means associated with said analog floating gate device for removing electrons from said floating gate; an analog input voltage set bus; an analog output voltage bus; an amplifier having a first input connected to said floating gate, a second input connected to said analog output voltage bus, and an output; a capacitor connected to said inverting input of said amplifier; means for connecting said analog input voltage set bus to said second input of said amplifier during a first voltage setting phase of said circuit to store a set voltage related to a desired operating voltage on said capacitor and for comparing said set voltage with said floating gate voltage during a second voltage setting phase of said circuit and producing a comparator output signal in response thereto; means, responsive to said comparator output signal, for controlling said non-avalanche hot electron injection means and said electron tunneling means to change said floating gate voltage to a value substantially the same as said desired operating voltage; and means for connecting said output of said amplifier to said inverting input of said amplifier during an operating phase of said circuit.
Claim 2
Dependent Claim
261 words
A circuit disposed on a semiconductor substrate for generating an analog voltage signal in a semiconductor integrated circuit disposed on said semiconductor substrate, including: an analog floating gate storage device disposed on said semiconductor substrate, said analog floating gate storage device including a floating gate having a floating gate voltage thereon; a non-avalanche hot electron injection means associated with said analog floating gate device for injecting electrons onto said floating gate; electron tunneling means associated with said analog floating gate device for removing electrons from said floating gate; an analog input voltage set bus; an analog output voltage bus; an amplifier having a first input connected to said floating gate, a second input connected to said analog output voltage bus, and an output; a capacitor connected to said inverting input of said amplifier; means for connecting said analog input voltage set bus to said second input of said amplifier during a first voltage setting phase of said circuit to store a set voltage related to a desired operating voltage on said capacitor and for comparing said set voltage with said floating gate voltage during a second voltage setting phase of said circuit and producing a comparator output signal in response thereto; means, responsive to said comparator output signal, for controlling said non-avalanche hot electron injection means and said electron tunneling means to change said floating gate voltage to a value substantially the same as said desired operating voltage; and means for connecting said output of said amplifier to said inverting input of said amplifier during an operating phase of said circuit.
Claim 3
Dependent Claim
28 words
The circuit of claim 1 wherein said first input of said amplifier is a non-inverting input and wherein said second input pf said amplifier is an inverting input.
Claim 4
Dependent Claim
25 words
The circuit of claim 1 wherein said means for removing electrons from said floating gate includes means for illuminating said floating gate with ultraviolet radiation.
Claim 5
Dependent Claim
24 words
The circuit of claim 1 wherein said means for removing electrons from said floating gate comprises means for tunneling electrons from said floating gate.
Claim 6
Dependent Claim
43 words
The circuit of claim 1 wherein said analog output voltage bus has a capacitance associated therewith, said capacitance having a value greater than the inherent capacitance associated with said bus and further including means for turning off the output of said follower amplifier.
Claim 7
Dependent Claim
39 words
The circuit of claim 5, further including: a monitor/dynamic load line; an analog pass gate connected between said analog output voltage bus and said monitor/dynamic load line; and means for providing a strobe signal to said analog pass gate.
Claim 8
Dependent Claim
63 words
The circuit of claim 1, further including: a diode-connected P-channel MOS transistor having a source connected to a first voltage rail, said diode-connected P-channel MOS transistor having a capacitor connected between its gate and source; an N-channel MOS transistor having its gate connected to said analog output voltage bus and its source connected to the drain of said diode connected P-channel MOS transistor.
Claim 9
Dependent Claim
61 words
The circuit of claim 1, further including: a diode-connected N-channel MOS transistor having a source connected to a second voltage rail, said diode-connected N-channel MOS transistor having a capacitor connected between its gate and source; an MOS transistor having its gate connected to said analog output voltage bus and its source connected to the drain of said diode-connected N-channel MOS transistor.
Claim 10
Dependent Claim
14 words
The circuit of claim 8, wherein said MOS transistor is an N-channel MOS transistor.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-07-30 | 2000-01-29 | 2000-07-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-07-30 | 2004-01-29 | 2004-07-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-07-30 | 2008-01-29 | 2008-07-30 | $7700.00 | Window Closed / Lapsed |