US5541873A
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Nonvolatile memory
Assignee: Rohm Co Ltd
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Filing: 1995-06-15
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Granted: 1996-07-30
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Expires: 2015-06-15
Abstract
Abstract A nonvolatile memory having a simple structure where recorded information can be read nondestructively. A voltage is applied between a control gate and a memory gate for writing. A ferroelectric layer is polarized in accordance with the polarization of the applied voltage. A control gate voltage, necessary to form a channel, is small when the ferroelectric layer is polarized with the control gate side negative (polarized with second polarization). The control gate voltage V cg necessary to form a channel is large when the ferroelectric layer is polarized with the control gate side positive (polarized with first polarization). The reference voltage is applied to the control gate for reading. A large drain current flows when the ferroelectric layer is polarized with the second polarization and a small drain current flows when the ferroelectric layer is polarized with the first polarization. Recorded information can be read by detecting the drain current. The polzarization state of the ferroelectric layer is not affected by the reading operation.
Inventors
- 👤 Kiyoshi Nishimura
- 👤 Hideki Hayashi
- 👤 Jun Muramoto
- 👤 Takaaki Fuchikami
- 👤 Hiromi Uenoyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 05:49
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/22
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
174 words
A nonvolatile memory formed by nonvolatile memory devices connected in a matrix: wherein the nonvolatile memory device comprises: a source region of a first conductive type and a drain region of the first conductive type; a channel region of a second conductive type formed between the source and the drain regions; a memory gate formed as a conducting layer on the channel region and insulated from the channel region; a ferroelectric layer formed on the memory gate; and a control gate formed on the ferroelectric layer as a conducting layer; and wherein the nonvolatile memory comprises, a source-drain line connecting the drain regions and the source regions of neighboring nonvolatile memory devices in a same column of the matrix and connecting the nonvolatile memory devices in the same column of the matrix in series, a control gate line connecting the control gates of the nonvolatile memory devices in the same column of the matrix, a memory gate line connecting the memory gates of the nonvolatile memory devices in a same row of the matrix.
Claim 2
Dependent Claim
174 words
A nonvolatile memory formed by nonvolatile memory devices connected in a matrix: wherein the nonvolatile memory device comprises: a source region of a first conductive type and a drain region of the first conductive type; a channel region of a second conductive type formed between the source and the drain regions; a memory gate formed as a conducting layer on the channel region and insulated from the channel region; a ferroelectric layer formed on the memory gate; and a control gate formed on the ferroelectric layer as a conducting layer; and wherein the nonvolatile memory comprises, a source-drain line connecting the drain regions and the source regions of neighboring nonvolatile memory devices in a same column of the matrix and connecting the nonvolatile memory devices in the same column of the matrix in series, a control gate line connecting the control gates of the nonvolatile memory devices in the same column of the matrix, a memory gate line connecting the memory gates of the nonvolatile memory devices in a same row of the matrix.
Claim 3
Dependent Claim
79 words
The nonvolatile memory in accordance with claim 1 further comprising, drain switching means for switching between the source-drain line being connected and not connected to current judgment means for judging a drain current, the drain switching means being provided for each source-drain line; and memory gate switching means for switching between a writing voltage of level H or level L being applied to the memory gate line, the memory gate switching means being provided for each memory gate line.
Claim 4
Dependent Claim
36 words
The nonvolatile memory in accordance with claim 1 wherein; the control gates of the nonvolatile memories in a same column of the matrix are connected to the control gate line through control gate protection switching means.
Claim 5
Dependent Claim
59 words
The nonvolatile memory in accordance with claim 3 wherein, read and write operations are carried out by applying a reference voltage to all of the control gate lines, and the control gate protection switching means in a column associated with a selected nonvolatile memory device are turned on and the other control gate protection switching means are turned off.
Claim 6
Dependent Claim
80 words
The nonvolatile memory in accordance with claim 3, further comprising: first selecting means for using a first selecting input for of controlling the memory gate switching means to receive the first selecting input, the first selecting means being provided for each row of the matrix; and second selecting means for controlling the drain switch means and the control gate protection switching means to receive a second selecting input, the second selecting means being provided for each column of the matrix.
Claim 7
Dependent Claim
44 words
The nonvolatile memory in accordance with claim 3, wherein all of the control gate protection switching means are turned on when no second selecting input is applied to any column of the matrix, thereby the reference voltage being applied to the control gate lines.
Claim 8
Dependent Claim
126 words
A method of writing to the nonvolatile memory of claim 1, comprising the steps of: applying a reference voltage to the control gate line connected to a selected nonvolatile memory device and allowing the other control gate lines to float; applying a level H voltage, higher than the reference voltage, to the memory gate line connected to the selected nonvolatile memory device for polarizing the ferroelectric layer of the selected nonvolatile memory device to a first state or applying a level L voltage, lower than the reference voltage to the memory gate line connected to the selected nonvolatile memory device for polarizing the ferroelectric layer of the selected nonvolatile memory device to a second state; and applying the reference voltage to the other memory gate lines.
Claim 9
Dependent Claim
175 words
A method of reading from the nonvolatile memory of claim 1, comprising the steps of: applying a reference voltage to the control gate line connected to a selected nonvolatile memory device and allowing the other control gate lines, to float, the reference voltage generating a first drain current when the ferroelectric layer the selected nonvolatile memory device is polarized with a first state, generating a second drain current when the ferroelectric layer of the selected nonvolatile memory device is polarized in a second state and generating a reference current, the reference current being intermediate the first drain current and the second drain current, when the ferroelectric layer of the selected nonvolatile memory device is not polarized; allowing the memory gate line connected to the selected nonvolatile memory device to float and applying the reference voltage to the other memory gate lines; and judging whether a current of the source-drain line connected to the selected nonvolatile memory device is larger or smaller than about half a value of a reference current, thereby reading recorded information nondestructively.
Claim 10
Dependent Claim
34 words
A method of placing the nonvolatile memory of claim 1 in standby, comprising the step of: applying a reference voltage to all of the control gate lines and all of the memory gate lines.
Claim 11
Dependent Claim
171 words
A nonvolatile memory formed by nonvolatile memory devices connected in matrix: the nonvolatile memory device comprising a source region of a first conductive type and a drain region of the first conductive type; a channel region of a second conductive type formed between the source and the drain regions; a memory gate formed as a conductive layer on the channel region and insulated from the channel region; a ferroelectric layer formed on the memory gate; and a control gate formed on the ferroelectric layer as a conductive layer; wherein the nonvolatile memory comprises; a source-drain line connecting the drain regions and the source regions of neighboring nonvolatile memory devices in a same column of the matrix and connecting the nonvolatile memory devices in the same column of the matrix in series, a control gate line connecting the control gates of the nonvolatile memory devices in the same column of the matrix, a memory gate line connecting the memory gates of the nonvolatile memory devices in the same column of the matrix.
Claim 12
Dependent Claim
171 words
A nonvolatile memory formed by nonvolatile memory devices connected in matrix: the nonvolatile memory device comprising a source region of a first conductive type and a drain region of the first conductive type; a channel region of a second conductive type formed between the source and the drain regions; a memory gate formed as a conductive layer on the channel region and insulated from the channel region; a ferroelectric layer formed on the memory gate; and a control gate formed on the ferroelectric layer as a conductive layer; wherein the nonvolatile memory comprises; a source-drain line connecting the drain regions and the source regions of neighboring nonvolatile memory devices in a same column of the matrix and connecting the nonvolatile memory devices in the same column of the matrix in series, a control gate line connecting the control gates of the nonvolatile memory devices in the same column of the matrix, a memory gate line connecting the memory gates of the nonvolatile memory devices in the same column of the matrix.
Claim 13
Dependent Claim
78 words
A nonvolatile memory in accordance with claim 10 further comprising, drain switching means for switching the source-drain line between being connected and not connected to current judgment means for a drain current, the drain switching means being provided for each source-drain line; and memory gate switching means for switching between a writing voltage of level H or level L being applied to the memory gate line, the memory gate switching means being provided for each memory gate line.
Claim 14
Dependent Claim
36 words
The nonvolatile memory in accordance with claim 10 wherein, the memory gates of the nonvolatile memories in the same column of the matrix are connected to the memory gate line through memory gate protection switching means.
Claim 15
Dependent Claim
114 words
The nonvolatile memory in accordance with claim 12, wherein read operation is carried out by applying a reference voltage to all of the memory gate lines and turning off the memory gate protection switching means in a row of selected nonvolatile memory device and the other memory gate protection switching means are turned on, and a write operation is carried out by applying an H level voltage or L level voltage to the memory gate line connected to the selected nonvolatile memory device for writing and turning on the memory gate protection switching means in a row associated with the selected nonvolatile memory device and turning off the other memory gate protection switching means.
Claim 16
Dependent Claim
80 words
The nonvolatile memory in accordance with claim 12 further comprising, first selecting means for controlling the memory gate protection switching means by receiving a first selecting input, first selecting means being provided for each row of the matrix, and second selecting means for controlling the drain switching means and for using a second selecting input for controlling the memory gate switching means by receiving the second selecting input, the second selecting means being provided for each column of the matrix.
Claim 17
Dependent Claim
150 words
A writing method for the nonvolatile memory of claim 12, comprising the steps of: applying a reference voltage to all of the control gate; applying the reference voltage to the memory gate lines not connected to selected nonvolatile memory device; turning on the memory gate protection switching means in a row including the selected nonvolatile memory device and; turning off the other memory gate protection switching means and applying a level H voltage: level H voltage being higher than the reference voltage, to the memory gate line connected to the selected nonvolatile memory device for polarizing the ferroelectric layer of the selected nonvolatile memory device to first state or applying a level L voltage, level L voltage being lower than the reference voltage, to the memory gate line connected to the selected nonvolatile memory device for polarizing the ferroelectric layer of the selected nonvolatile memory device to a second state.
Claim 18
Dependent Claim
96 words
A method of reading from the nonvolatile memory of claim 12, comprising the steps of: applying a reference voltage to all of the control gate lines; applying a reference voltage to all of the memory gate lines; turning off the memory gate protection switching means in a row including a selected nonvolatile memory device; turning on the other memory gate protection switching means; and judging whether a current of the source-drain line connected to the selected nonvolatile memory device is larger or smaller than about half a value of a reference current, thereby recorded information nondestructively.
Claim 19
Dependent Claim
43 words
A method of placing the nonvolatile memory of claim 12 in standby, comprising: applying a reference voltage to all of the control gate lines and to all of the memory gate lines; and turning on all of the memory gate protection switching means.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-07-30 | 2000-01-29 | 2000-07-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-07-30 | 2004-01-29 | 2004-07-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-07-30 | 2008-01-29 | 2008-07-30 | $7700.00 | Window Closed / Lapsed |