Abstract A semiconductor memory device such as an EEPROM having an insulation layer with a dielectric constant greater than that of SiO 2 formed beneath a floating gate on or below a tunnel oxide layer where the passage of electrons is enabled by means of tunnel effect in order to increase the dielectric breakdown voltage of the tunnel oxide layer. The semiconductor memory device is made by a method in which, for example, a thin Si 3 N 4 layer is formed on a thin SiO 2 tunnel oxide layer or a substrate, and the layered structure is patterned to leave only a tunnel part. Then a SiO 2 gate insulation layer is formed over the substrate and the tunnel part, followed by formation of a floating gate on the SiO 2 gate insulation layer and diffusion of impurities into the floating gate. The Si 3 N 4 portion of the tunnel part prevents diffused impurities from reaching the SiO 2 tunnel oxide of the tunnel part or the substrate. Further, patterning of the tunnel part before formation of the SiO 2 gate insulation layer avoids contamination of the SiO 2 gate insulation layer. Thus, the dielectric breakdown voltage of the SiO 2 tunnel oxide of the tunnel part and the SiO 2 gate insulation layer is increased.
A method of manufacturing a semiconductor memory device, comprising the steps of: forming a first insulation layer on a semiconductor substrate; forming a second insulation layer on the first insulation layer; removing the second insulation layer except for a tunnel insulation part where electrons formed in the substrate are enabled to pass through, without removing the first insulation layer in order to form an exposed first insulation layer; forming a third insulation layer by oxidizing the exposed first insulation layer; and forming a polysilicon layer on the third and second insulation layers.
Claim 2
Independent Claim
92 words
A method of manufacturing a semiconductor memory device, comprising the steps of: forming a first insulation layer on a semiconductor substrate; forming a second insulation layer on the first insulation layer; removing the second insulation layer except for a tunnel insulation part where electrons formed in the substrate are enabled to pass through, without removing the first insulation layer in order to form an exposed first insulation layer; forming a third insulation layer by oxidizing the exposed first insulation layer; and forming a polysilicon layer on the third and second insulation layers.
Claim 3
Dependent Claim
17 words
The method of claim 1, further comprising the step of: diffusing an impurity into the polysilicon layer.