US5541124A
Expired / Lapsed
US
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Method for making bipolar transistor having double polysilicon structure
Assignee: Sony Corp
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Filing: 1995-06-07
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Granted: 1996-07-30
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Expires: 2015-06-07
Abstract
Abstract A semiconductor device and a manufacturing method therefor which can simultaneously realize both a reduction in base transit time by a reduction in base width and a reduction in base resistance by a reduction in link base resistance. The semiconductor device is manufactured by the method including the steps of forming a first impurity diffused layer of a first conduction type in a semiconductor substrate; forming a conducting film connected to the first impurity diffused layer; forming a first insulating film on the conducting film; forming a first hole through a laminated film composed of the first insulating film and the conducting film; forming a second impurity diffused layer of the first conduction type in the semiconductor substrate exposed to the first hole; forming a side wall from a second insulating film in the first hole to form a second hole; and forming a third impurity diffused layer of the first conduction type in the semiconductor substrate exposed to the second hole.
Inventors
- 👤 Hiroyuki Miwa
- 👤 Shigeru Kanematsu
- 👤 Takayuki Gomi
- 👤 Hiroaki Anmo
- 👤 Takashi Noguchi
- 👤 Katsuyuki Kato
- 👤 Hirokazu Ejiri
- 👤 Norikazu Ouchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 21:42
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/40; H10D10/421; H10D10/01; H10D10/051; Y; Y10; Y10S; Y10S148/00; Y10S148/01; Y10S148/011
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
258 words
A manufacturing method for a semiconductor device, comprising the steps of: forming a first impurity diffused layer of a first conduction type in a semiconductor substrate; forming a first conducting film connected to said first impurity diffused layer; forming a first insulating film on said first conducting film; forming a first hole through said first insulating film and said first conducting film; forming a second impurity diffused layer of said first conduction type connected to said first impurity diffused layer in said semiconductor substrate; selectively forming a second conducting film on a side surface of said first conducting film and on said semiconductor substrate exposed in said first hole; forming a side wall with a second insulating film in said first hole to form a second hole leading through said first impurity diffused layer to said semiconductor substrate; forming a side wall from a third insulating film in said second hole to form a third hole; forming a third conducting film in said third hole; doping said third conducting film with an impurity of said first conduction type; forming a third impurity diffused layer of said first conduction type in said semiconductor substrate by impurity diffusion from said third conducting film doped with said impurity of said first conduction type; doping said third conducting film with an impurity of a second conduction type; and forming a fourth impurity diffused layer of said second conduction type in said third impurity diffused layer by impurity diffusion from said third conducting film doped with said impurity of said second conduction type.
Claim 2
Dependent Claim
258 words
A manufacturing method for a semiconductor device, comprising the steps of: forming a first impurity diffused layer of a first conduction type in a semiconductor substrate; forming a first conducting film connected to said first impurity diffused layer; forming a first insulating film on said first conducting film; forming a first hole through said first insulating film and said first conducting film; forming a second impurity diffused layer of said first conduction type connected to said first impurity diffused layer in said semiconductor substrate; selectively forming a second conducting film on a side surface of said first conducting film and on said semiconductor substrate exposed in said first hole; forming a side wall with a second insulating film in said first hole to form a second hole leading through said first impurity diffused layer to said semiconductor substrate; forming a side wall from a third insulating film in said second hole to form a third hole; forming a third conducting film in said third hole; doping said third conducting film with an impurity of said first conduction type; forming a third impurity diffused layer of said first conduction type in said semiconductor substrate by impurity diffusion from said third conducting film doped with said impurity of said first conduction type; doping said third conducting film with an impurity of a second conduction type; and forming a fourth impurity diffused layer of said second conduction type in said third impurity diffused layer by impurity diffusion from said third conducting film doped with said impurity of said second conduction type.
Claim 3
Dependent Claim
101 words
A manufacturing method for a semiconductor device according to claim 1, wherein said step of selectively forming said second conducting film comprising forming a refractory metal film at a bottom of said first hole, on side walls of said first hole, and on said first insulating layer, performing a heat treatment to make only a portion of said refractory metal film on said side surface of said first conducting film and on said semiconductor substrate exposed by said first hole into a refractory metal silicide film, and removing a remaining portion of said refractory metal film from said first insulating film.
Claim 4
Dependent Claim
20 words
A manufacturing method for a semiconductor device according to claim 2, wherein said refractory metal film comprises a titanium film.
Claim 5
Dependent Claim
50 words
A manufacturing method for a semiconductor device according to claim 1, wherein said step of selectively forming said second conducting film comprises selectively forming by CVD a refractory metal film only on said side surface of said first conducting film and on said semiconductor substrate exposed by said first hole.
Claim 6
Dependent Claim
24 words
A manufacturing method for a semiconductor device according to claim 4, wherein said refractory metal film comprises a tungsten film selectively formed by CVD.
Claim 7
Dependent Claim
30 words
A manufacturing method for a semiconductor device according to claim 1, wherein said first conducting film comprises a boron doped polysilicon film and a refractory metal silicide film laminated together.
Claim 8
Dependent Claim
49 words
A manufacturing method for a semiconductor device according to claim 1, wherein said first impurity diffused layer comprises a base of a bipolar transistor; said third impurity diffused layer comprises a base of said bipolar transistor; and said fourth impurity diffused layer comprises an emitter of said bipolar transistor.
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