US5539692A
Expired / Lapsed
US
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Semiconductor memory and method of setting type
Assignee: PS4 Luxco SARL
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Filing: 1994-02-03
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Granted: 1996-07-23
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Expires: 2014-02-03
Abstract
Abstract A semiconductor chip is provided with a function selection circuit for selecting memory functions according to the information stored in nonvolatile memory elements is sealed in a package, and the memory functions are set finally by writing the nonvolatile memory element in that state or in a state in which the semiconductor chip is mounted on a board. By setting the type of a semiconductor memory according to the above procedure, the process from the wafer process up to the assembling step can be made common, and hence the mass-productibity and the production control can be facilitated. Semiconductor memories having memory functions conforming to user specifications can be provided in a short time.
Inventors
- 👤 Kazuhiko Kajigaya
- 👤 Masashi Horiguchi
- 👤 Yoshinobu Nakagome
- 👤 Ryoichi Hori
- 👤 Tetsuro Matsumoto
- 👤 Masaharu Kubo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 16:04
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/04; G11C29/08; G11C29/12; G11C29/44; G06; G06F; G06F11/00; G06F11/006; G11C7/00; G11C7/10; G11C7/1015; G11C7/1045
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
194 words
A dynamic random access memory comprising: a semiconductor chip; a package within which said semiconductor chip is sealed; a memory array formed on the semiconductor chip, said memory array including: a plurality of data lines, a plurality of word lines and a plurality of dynamic memory cells each of which is coupled to a corresponding one of said plurality of data lines and a corresponding one of said plurality of word lines; a mode setting signal storing circuit formed on the semiconductor chip, said mode setting signal storing circuit including a plurality of nonvolatile memory elements for storing information relating to a plurality of operation modes of said dynamic random access memory, said mode setting signal storing circuit outputting a plurality of mode setting signals, said information relating to said plurality of operation modes of said dynamic random access memory being written to said nonvolatile memory elements after the semiconductor chip is sealed in the package; and a selection circuit formed on the semiconductor chip, said selection circuit receives said plurality of mode setting signals and selects one of said operation modes of said dynamic random access memory based on said mode setting signals.
Claim 2
Dependent Claim
194 words
A dynamic random access memory comprising: a semiconductor chip; a package within which said semiconductor chip is sealed; a memory array formed on the semiconductor chip, said memory array including: a plurality of data lines, a plurality of word lines and a plurality of dynamic memory cells each of which is coupled to a corresponding one of said plurality of data lines and a corresponding one of said plurality of word lines; a mode setting signal storing circuit formed on the semiconductor chip, said mode setting signal storing circuit including a plurality of nonvolatile memory elements for storing information relating to a plurality of operation modes of said dynamic random access memory, said mode setting signal storing circuit outputting a plurality of mode setting signals, said information relating to said plurality of operation modes of said dynamic random access memory being written to said nonvolatile memory elements after the semiconductor chip is sealed in the package; and a selection circuit formed on the semiconductor chip, said selection circuit receives said plurality of mode setting signals and selects one of said operation modes of said dynamic random access memory based on said mode setting signals.
Claim 3
Dependent Claim
95 words
A dynamic random access memory according to claim 1, wherein said plurality of operation modes of said dynamic random access memory include a first mode and a second mode, and said dynamic random access memory is accessible in a unit of a first number of bits when said dynamic random access memory is operating in said first mode and is accessible in a unit of a second number of bits when said dynamic random access memory is operating in said second mode, said first number of bits being different from said second number of bits.
Claim 4
Dependent Claim
80 words
A dynamic random access memory according to claim 1, wherein said plurality of operation modes of said dynamic random access memory includes a first mode and a second mode; and said dynamic random access memory is accessible in a unit comprising one bit when said dynamic random access memory is operating in said first mode and is accessible in a unit comprising a first plurality number of bits when said dynamic random access memory is operating in said second mode.
Claim 5
Dependent Claim
71 words
A dynamic random access memory according to claim 3, wherein said plurality of operation modes of said dynamic random access memory further includes a third mode; and said dynamic random access memory is accessible in a unit comprising a second plurality number of bits when said dynamic random access memory is operating in said third mode, said first plurality number of bits being different from said second plurality number of bits.
Claim 6
Independent Claim
144 words
A method of forming a dynamic random access memory, said method comprising successive steps of: (1) forming a memory array and a mode setting circuit on a semiconductor chip, said memory array comprising a plurality of data lines, a plurality of word lines, and a plurality of dynamic memory cells each of which is coupled to a corresponding one of said plurality of data lines and a corresponding one of said plurality of word lines, said mode setting circuit including a nonvolatile memory element; (2) sealing said semiconductor chip in a package; and (3) writing information relating to a plurality of operation modes of said dynamic random access memory into said nonvolatile memory element so that said mode setting circuit sets one of the plurality of operation modes of said dynamic random access memory based on said information written into said nonvolatile memory element.
Claim 7
Independent Claim
144 words
A method of forming a dynamic random access memory, said method comprising successive steps of: (1) forming a memory array and a mode setting circuit on a semiconductor chip, said memory array comprising a plurality of data lines, a plurality of word lines, and a plurality of dynamic memory cells each of which is coupled to a corresponding one of said plurality of data lines and a corresponding one of said plurality of word lines, said mode setting circuit including a nonvolatile memory element; (2) sealing said semiconductor chip in a package; and (3) writing information relating to a plurality of operation modes of said dynamic random access memory into said nonvolatile memory element so that said mode setting circuit sets one of the plurality of operation modes of said dynamic random access memory based on said information written into said nonvolatile memory element.
Claim 8
Dependent Claim
44 words
A method of forming a dynamic random access memory according to claim 5 further comprising a step of: performing a burn-in test for said dynamic random access memory, said performing step being executed after said sealing step (2) and before said writing step (3).
Claim 9
Dependent Claim
39 words
A method of forming a dynamic random access memory according to claim 6 further comprising, after step (3), a step of: writing information relating to said plurality of operation modes of said dynamic random access memory to said package.
Claim 10
Dependent Claim
23 words
A method of forming a dynamic random access memory according to claim 7, wherein each of said nonvolatile memory elements includes a fuse.
Claim 11
Dependent Claim
35 words
A dynamic random access memory according to claim 1, wherein said plurality of operation modes of said dynamic random access memory includes a first data line selecting mode and a second data line selecting mode.
Claim 12
Dependent Claim
33 words
A dynamic random access memory according to claim 9, wherein said first data line selecting mode includes a high-speed page mode and said second data line selecting mode includes a static column mode.
Claim 13
Dependent Claim
26 words
A dynamic random access memory according to claim 10, wherein said plurality of operation modes of said dynamic random access memory further includes a nibble mode.
Claim 14
Dependent Claim
105 words
A dynamic random access memory according to claim 1, wherein: said plurality of operation modes of said dynamic random access memory further includes a first mode and a second mode; a first number of memory cells of said plurality of dynamic memory cells are each refreshed at once when said dynamic random access memory operates in said first mode; and a second number of memory cells of said plurality of dynamic memory cells are each refreshed at a time when said dynamic random access memory operates in said second mode, said first number of memory cells being different from said second number of memory cells.
Claim 15
Dependent Claim
27 words
A dynamic random access memory according to claim 12, wherein said first mode includes a 2K refresh mode and said second mode includes a 4K refresh mode.
Claim 16
Dependent Claim
215 words
A dynamic random access memory comprising: a semiconductor chip; a memory array formed on the semiconductor chip, said memory array including (i) a plurality of data lines, (ii) a plurality of word lines, and (iii) a plurality of dynamic memory cells each of which is coupled to a corresponding one of said plurality of data lines and a corresponding one of said plurality of word lines; a package within which the semiconductor chip is sealed; a voltage setting signal storing circuit formed on the semiconductor chip, said voltage setting signal storing circuit including a plurality of nonvolatile memory elements for storing information relating to voltage settings, said voltage setting signal storing circuit outputting a plurality of voltage setting signals, said information being written into said nonvolatile memory elements after the semiconductor chip is sealed in the package; a voltage generating circuit formed on the semiconductor chip, said voltage generating circuit receiving said plurality of voltage setting signals and outputting (i) a first voltage in response to said plurality of voltage setting signals being of a first state and (ii) a second voltage in response to said plurality of voltage setting signals being of a second state, said first state being different from said second state, and said first voltage being different from said second voltage.
Claim 17
Dependent Claim
215 words
A dynamic random access memory comprising: a semiconductor chip; a memory array formed on the semiconductor chip, said memory array including (i) a plurality of data lines, (ii) a plurality of word lines, and (iii) a plurality of dynamic memory cells each of which is coupled to a corresponding one of said plurality of data lines and a corresponding one of said plurality of word lines; a package within which the semiconductor chip is sealed; a voltage setting signal storing circuit formed on the semiconductor chip, said voltage setting signal storing circuit including a plurality of nonvolatile memory elements for storing information relating to voltage settings, said voltage setting signal storing circuit outputting a plurality of voltage setting signals, said information being written into said nonvolatile memory elements after the semiconductor chip is sealed in the package; a voltage generating circuit formed on the semiconductor chip, said voltage generating circuit receiving said plurality of voltage setting signals and outputting (i) a first voltage in response to said plurality of voltage setting signals being of a first state and (ii) a second voltage in response to said plurality of voltage setting signals being of a second state, said first state being different from said second state, and said first voltage being different from said second voltage.
Claim 18
Dependent Claim
19 words
A dynamic random access memory according to claim 14, wherein each of said nonvolatile memory elements includes a fuse.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-07-23 | 2000-01-22 | 2000-07-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-07-23 | 2004-01-22 | 2004-07-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-07-23 | 2008-01-22 | 2008-07-23 | $7700.00 | Window Closed / Lapsed |