US5539203A
Expired / Lapsed
US
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Single ion implantation system
Assignee: Individual
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Filing: 1994-04-26
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Granted: 1996-07-23
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Expires: 2014-04-26
Abstract
Abstract The present invention is directed to a low-energy (0 to 100 keV) or high-energy (1 to 4 MeV) single ion implantation system in which single ions are extracted from a focused ion beam or micro-ion beam by beam chopping. The low-energy single ion implantation system has, in combination with a focused ion beam system, an electrostatic deflector for beam chopping (20), an aperture for single ion extraction (21) and an electrode (35) for generating a retarding electric field to make the single ion soft-land on a specimen. The high-energy single ion implantation system has, in combination with an ion microprobe, a Cs sputter source (33) which enables dopant ion implantation and high LET ion irradiation. The single ion implantation method includes a step of implanting the extracted single ions from the both systems into the specimen at a predetermined target position with aiming accuracies of 50 nmφ and 1.5 μmφ, respectively.
Inventors
- 👤 Iwao Ohdomari
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 04:24
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/3002; H01J37/3007; H01J2237/00; H01J2237/04; H01J2237/043; H01J2237/06; H01J2237/08; H01J2237/0802; H01J2237/0805; H01J2237/30; H01J2237/317; H01J2237/31701; H01J2237/31706; H01J2237/3171; H01J2237/31713
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
71 words
A low-energy single ion implantation system comprising: a first vacuum chamber; a second vacuum chamber connected, as a specimen preparation chamber, to said first vacuum chamber; and a focused ion beam system connected to said first vacuum chamber; CHARACTERIZED IN THAT said focused ion beam system extracts a single ion by beam chopping and decelerates said single ion by a retarding electric field to make it soft-land on the specimen surface.
Claim 2
Dependent Claim
71 words
A low-energy single ion implantation system comprising: a first vacuum chamber; a second vacuum chamber connected, as a specimen preparation chamber, to said first vacuum chamber; and a focused ion beam system connected to said first vacuum chamber; CHARACTERIZED IN THAT said focused ion beam system extracts a single ion by beam chopping and decelerates said single ion by a retarding electric field to make it soft-land on the specimen surface.
Claim 3
Dependent Claim
132 words
A low-energy single ion implantation system comprising, in combination: standard constituents of a focused ion beam system; and constituents for single ion implantation use; CHARACTERIZED IN THAT; said standard constituents includes; a liquid metal ion source for specimen trimming; and accelerator; a condenser lens; a mass spectrometer; an electrostatic objective lens; an aperture; a scanning deflection electrode; an electrode for generating a retarding electric field to decelerate an ion to make it soft-land on a specimen; a specimen stage; and a secondary electron detector; and said constituents for single ion implantation includes; a liquid metal ion source for single ion irradiation; an accelerator; a condenser lens; an electrostatic cylindrical lens; an electrostatic deflector for beam chopping; an aperture for single ion extraction; and a secondary electron detector for detecting an extracted ion.
Claim 4
Dependent Claim
132 words
A low-energy single ion implantation system comprising, in combination: standard constituents of a focused ion beam system; and constituents for single ion implantation use; CHARACTERIZED IN THAT; said standard constituents includes; a liquid metal ion source for specimen trimming; and accelerator; a condenser lens; a mass spectrometer; an electrostatic objective lens; an aperture; a scanning deflection electrode; an electrode for generating a retarding electric field to decelerate an ion to make it soft-land on a specimen; a specimen stage; and a secondary electron detector; and said constituents for single ion implantation includes; a liquid metal ion source for single ion irradiation; an accelerator; a condenser lens; an electrostatic cylindrical lens; an electrostatic deflector for beam chopping; an aperture for single ion extraction; and a secondary electron detector for detecting an extracted ion.
Claim 5
Dependent Claim
32 words
The system of claim 2, CHARACTERIZED IN THAT another constituent for single ion implantation use is a streak camera for detecting a single photon generated by the incidence of a single ion.
Claim 6
Dependent Claim
78 words
A high-energy single ion implantation system which uses an ion microprobe comprising; an RF ion source; an injector; an accelerator; a switching magnet; an assembly of a precision quadrupole magnet and a target chamber with an SEM for a micro ion beam line; and an assembly of an RBS chamber and a PIXE chamber for composition analysis beam line; CHARACTERIZED BY a Cs sputter source and a switching magnet for dopant ion implantation and high LET ion irradiation.
Claim 7
Dependent Claim
78 words
A high-energy single ion implantation system which uses an ion microprobe comprising; an RF ion source; an injector; an accelerator; a switching magnet; an assembly of a precision quadrupole magnet and a target chamber with an SEM for a micro ion beam line; and an assembly of an RBS chamber and a PIXE chamber for composition analysis beam line; CHARACTERIZED BY a Cs sputter source and a switching magnet for dopant ion implantation and high LET ion irradiation.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-07-23 | 2000-01-22 | 2000-07-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-07-23 | 2004-01-22 | 2004-07-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-07-23 | 2008-01-22 | 2008-07-23 | $7700.00 | Window Closed / Lapsed |