US5536330A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of purging and pumping vacuum chamber to ultra-high vacuum
Assignee: Applied Materials Inc
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Filing: 1995-05-15
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Granted: 1996-07-16
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Expires: 2015-05-15
Abstract
Abstract A method for purging a vacuum chamber suitable for use in the production of integrated circuit structures on semiconductor wafers. The method comprises providing the chamber to be purged and flowing a heated, non-reactive gas, such as argon gas, through the chamber. The non-reactive gas is heated to a temperature of at least 90° C. Further, the chamber is heated to maintain it at a temperature of at least 90° C. while flowing the gas therethrough. Flowing the heated non-reactive gas through the chamber causes released impurities or contaminants to be efficiently swept from the chamber in the non-reactive gas flow. After flowing the heated gas through the heated chamber, the flow of gas is interrupted and the chamber, while still hot, is pumped down to a vacuum of about 5×10 -7 to determine whether or not the chamber has a leakage problem. The presence of a leakage problem may be determined by comparing the pumping to past pumping of similar sized chambers, or by measuring the partial pressure of common gases such as nitrogen and/or oxygen. If the partial pressure of oxygen is higher than about 5×10 -8 and the partial pressure of nitrogen is higher than 2×10 -7 , the vacuum chamber can be considered to have a leakage problem. Pumping times may, therefore, be shortened by the use of such screening for leakage problems while the vacuum chamber is still hot.
Inventors
- 👤 Aihua Chen
- 👤 Robert A. Chapman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:51
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/4401; C23C16/4408; B; B01; B01J; B01J3/00; B01J3/006; C23C14/00; C23C14/22; C23C14/56; C23C14/564; C23C16/4412; C30; C30B; C30B23/00; C30B23/002; C30B25/00; C30B25/02; C30B25/14
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
154 words
A process for purging a vacuum chamber suitable for use in production of integrated circuit structures on semiconductor wafers comprising the steps of: (a) providing a vacuum chamber to be purged, said chamber having an interior surface; (b) simultaneously; i) flowing through said vacuum chamber from a first point in said chamber; and ii) pumping out of said chamber, through an exit spaced from said first point, a non-reactive gas heated to a temperature of at least 90° C.; and (c) maintaining said chamber at a temperature of at least 90° C. and at a vacuum level in a range of about 50 Torr to about 750 Torr while flowing said heated non-reactive gas through said chamber, thereby sweeping impurities from said chamber with said heated non-reactive gas as said non-reactive gas flows out of said chamber and substantially preventing readsorption of molecules that have been desorbed from the interior surface of said chamber.
Claim 2
Dependent Claim
154 words
A process for purging a vacuum chamber suitable for use in production of integrated circuit structures on semiconductor wafers comprising the steps of: (a) providing a vacuum chamber to be purged, said chamber having an interior surface; (b) simultaneously; i) flowing through said vacuum chamber from a first point in said chamber; and ii) pumping out of said chamber, through an exit spaced from said first point, a non-reactive gas heated to a temperature of at least 90° C.; and (c) maintaining said chamber at a temperature of at least 90° C. and at a vacuum level in a range of about 50 Torr to about 750 Torr while flowing said heated non-reactive gas through said chamber, thereby sweeping impurities from said chamber with said heated non-reactive gas as said non-reactive gas flows out of said chamber and substantially preventing readsorption of molecules that have been desorbed from the interior surface of said chamber.
Claim 3
Dependent Claim
21 words
The process of claim 1 wherein said heated non-reactive gas is selected from the group consisting of argon, nitrogen, and neon.
Claim 4
Dependent Claim
13 words
The process of claim 1 wherein said heated non-reactive gas comprises argon gas.
Claim 5
Dependent Claim
17 words
The process of claim 1 wherein said chamber is heated prior to flowing said heated gas therethrough.
Claim 6
Dependent Claim
33 words
The process of claim 1 wherein said gas is heated to a temperature in a range of from about 90° C. to about 250° C. prior to flowing said gas through said chamber.
Claim 7
Dependent Claim
25 words
The process of claim 1 wherein said chamber is maintained at a temperature in a range of from about 90° C. to about 250° C.
Claim 8
Dependent Claim
41 words
The process of claim 1 including the step of stopping said gas flow to said chamber and applying vacuum of at least 4×10 -7 Torr to said chamber to exhaust said non-reactive gas therefrom and to test said chamber vacuum integrity.
Claim 9
Dependent Claim
172 words
A process for purging a vacuum chamber suitable for use in production of integrated circuit structures on semiconductor wafers comprising: (a) providing a vacuum chamber to be purged, said vacuum chamber having an interior surface; (b) baking said chamber in a temperature of 90° C. to 250° C. prior to flowing gas thereinto to desorb molecules adsorbed to the interior surface of the chamber; (c) flowing argon gas through said chamber from a first point in said chamber, said argon gas heated in a temperature range of from about 90° C. to about 250° C.; and (d) maintaining said chamber at a vacuum level in a range of 50 to 750 Torr and in a temperature range of 90° C. to 250° C. while flowing said heated argon gas through said chamber, thereby sweeping said desorbed molecules and other impurities from said chamber with said argon gas to an exit spaced from said first point and substantially preventing readsorption of molecules that have been desorbed from the interior surface of said chamber.
Claim 10
Dependent Claim
172 words
A process for purging a vacuum chamber suitable for use in production of integrated circuit structures on semiconductor wafers comprising: (a) providing a vacuum chamber to be purged, said vacuum chamber having an interior surface; (b) baking said chamber in a temperature of 90° C. to 250° C. prior to flowing gas thereinto to desorb molecules adsorbed to the interior surface of the chamber; (c) flowing argon gas through said chamber from a first point in said chamber, said argon gas heated in a temperature range of from about 90° C. to about 250° C.; and (d) maintaining said chamber at a vacuum level in a range of 50 to 750 Torr and in a temperature range of 90° C. to 250° C. while flowing said heated argon gas through said chamber, thereby sweeping said desorbed molecules and other impurities from said chamber with said argon gas to an exit spaced from said first point and substantially preventing readsorption of molecules that have been desorbed from the interior surface of said chamber.
Claim 11
Dependent Claim
114 words
A process for purging a vacuum chamber suitable for use in production of integrated circuit structures on semiconductor wafers comprising the steps of: (a) heating a vacuum chamber to a temperature of at least 90° C., said chamber having an interior surface; (b) thereafter flowing through said heated vacuum chamber argon gas heated to a temperature of at least 90° C.; and (c) removing said heated gas from said chamber while flowing said heated argon gas through said chamber and at a rate sufficient to maintain a pressure below 750 Torr, thereby sweeping impurities from said chamber and substantially preventing readsorption of molecules that have been desorbed from the interior surface of said chamber.
Claim 12
Dependent Claim
114 words
A process for purging a vacuum chamber suitable for use in production of integrated circuit structures on semiconductor wafers comprising the steps of: (a) heating a vacuum chamber to a temperature of at least 90° C., said chamber having an interior surface; (b) thereafter flowing through said heated vacuum chamber argon gas heated to a temperature of at least 90° C.; and (c) removing said heated gas from said chamber while flowing said heated argon gas through said chamber and at a rate sufficient to maintain a pressure below 750 Torr, thereby sweeping impurities from said chamber and substantially preventing readsorption of molecules that have been desorbed from the interior surface of said chamber.
Claim 13
Dependent Claim
33 words
The process of claim 9 wherein said chamber is heated to a temperature in a range of from about 90° C. to about 250° C. prior to flowing said heated argon gas therethrough.
Claim 14
Dependent Claim
34 words
The process of claim 9 wherein said argon gas is heated to a temperature in a range of from about 90° C. to about 250° C. prior to being introduced to said vacuum chamber.
Claim 15
Dependent Claim
32 words
The process of claim 9 wherein said chamber is maintained at a vacuum level in a range of from about 50 to 750 Torr while said heated argon gas is flowing therethrough.
Claim 16
Dependent Claim
30 words
The process of claim 9 wherein said chamber is maintained at a temperature in a range of 90° C. to 250° C. while said heated argon gas is flowing therethrough.
Claim 17
Dependent Claim
42 words
The process of claim 9 including the step of stopping said argon gas flow to said chamber and applying vacuum of at least 4×10 -7 Torr to said chamber to exhaust said argon gas therefrom and to test said chamber vacuum integrity.
Claim 18
Dependent Claim
34 words
The process of claim 14 including the step of measuring partial pressure of at least one of nitrogen and oxygen after reaching said vacuum of at least about 4×10 -7 Torr in said chamber.
Claim 19
Dependent Claim
38 words
The process of claim 15 including the step of pumping said chamber to an ultra-high vacuum of at least 5×10 -9 Torr after said step of measuring said partial pressure of at least one of nitrogen and oxygen.
Claim 20
Dependent Claim
158 words
A process for purging a vacuum chamber suitable for use in production of integrated circuit structures on semiconductor wafers comprising the steps of: (a) heating a vacuum chamber in a temperature range of from about 90° C. to about 250° C., said chamber having an interior surface; (b) thereafter flowing through said heated vacuum chamber argon gas heated in a temperature range of from about 90° C. to about 250° C.; (c) maintaining said chamber in a temperature range of from about 90° C. to about 250° C. while flowing said heated argon gas through said chamber; and (d) removing said heated gas from said chamber while flowing said heated argon gas through said chamber and at a rate sufficient to maintain a pressure of from about 50 to about 750 Torr within said chamber, thereby sweeping impurities from said chamber and substantially preventing readsorption of molecules that have been desorbed from the interior surface of said chamber.
Claim 21
Dependent Claim
158 words
A process for purging a vacuum chamber suitable for use in production of integrated circuit structures on semiconductor wafers comprising the steps of: (a) heating a vacuum chamber in a temperature range of from about 90° C. to about 250° C., said chamber having an interior surface; (b) thereafter flowing through said heated vacuum chamber argon gas heated in a temperature range of from about 90° C. to about 250° C.; (c) maintaining said chamber in a temperature range of from about 90° C. to about 250° C. while flowing said heated argon gas through said chamber; and (d) removing said heated gas from said chamber while flowing said heated argon gas through said chamber and at a rate sufficient to maintain a pressure of from about 50 to about 750 Torr within said chamber, thereby sweeping impurities from said chamber and substantially preventing readsorption of molecules that have been desorbed from the interior surface of said chamber.
Claim 22
Dependent Claim
44 words
The process of claim 17 including the step of stopping said heated argon gas flow to said chamber and applying vacuum of at least about 4×10 -7 Torr to said chamber to exhaust said argon gas therefrom and to test said chamber vacuum integrity.
Claim 23
Dependent Claim
34 words
The process of claim 18 including the step of measuring partial pressure of at least one of nitrogen and oxygen after reaching said vacuum of at least about 4×10 -7 Torr in said chamber.
Claim 24
Dependent Claim
66 words
The process of claim 19 including the step of pumping said chamber to an ultra-high vacuum of at least 5×10 -9 Torr after said step of measuring said partial pressure of at least one of nitrogen and oxygen, if said measured partial pressure of oxygen does not exceed about 5×10 -8 Torr and said measured partial pressure of nitrogen does not exceed about 2×10 -7 Torr.
Claim 25
Dependent Claim
186 words
A process for purging a vacuum chamber suitable for use in the production of integrated circuit structures on semiconductor wafers comprising the steps of: (a) heating a vacuum chamber in a temperature range of from about 90° C. to about 250° C., said chamber having an interior surface; (b) thereafter flowing through said heated vacuum chamber argon gas heated in a temperature range of from about 90° C. to about 250° C.; (c) maintaining said chamber in a temperature range of from about 90° C. to about 250° C. while flowing said heated argon gas through said chamber; (d) removing said hated gas from said chamber simultaneous with said flowing step and at a rate sufficient to maintain a pressure of from about 50 to about 750 Torr within said chamber, thereby sweeping impurities from said chamber and substantially preventing readsorption of molecules that have been desorbed from the interior surface of said chamber; (e) stopping said gas flow to said chamber; and (f) applying vacuum of at least 4×10 -7 Torr to said chamber to exhaust said non-reactive gas and to test chamber vacuum integrity.
Claim 26
Dependent Claim
186 words
A process for purging a vacuum chamber suitable for use in the production of integrated circuit structures on semiconductor wafers comprising the steps of: (a) heating a vacuum chamber in a temperature range of from about 90° C. to about 250° C., said chamber having an interior surface; (b) thereafter flowing through said heated vacuum chamber argon gas heated in a temperature range of from about 90° C. to about 250° C.; (c) maintaining said chamber in a temperature range of from about 90° C. to about 250° C. while flowing said heated argon gas through said chamber; (d) removing said hated gas from said chamber simultaneous with said flowing step and at a rate sufficient to maintain a pressure of from about 50 to about 750 Torr within said chamber, thereby sweeping impurities from said chamber and substantially preventing readsorption of molecules that have been desorbed from the interior surface of said chamber; (e) stopping said gas flow to said chamber; and (f) applying vacuum of at least 4×10 -7 Torr to said chamber to exhaust said non-reactive gas and to test chamber vacuum integrity.
Claim 27
Dependent Claim
33 words
The process of claim 21 including the step of measuring partial pressure of at least one of nitrogen and oxygen after reaching said vacuum of at least 4×10 -7 Torr in said chamber.
Claim 28
Dependent Claim
66 words
The process of claim 22 including the step of pumping said chamber to an ultra-high vacuum of at least 5×10 -9 Torr after said step of measuring said partial pressure of at least one of nitrogen and oxygen, if said measured partial pressure of oxygen does not exceed about 5×10 -8 Torr and said measured partial pressure of nitrogen does not exceed about 2×10 -7 Torr.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-07-16 | 2000-01-15 | 2000-07-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-07-16 | 2004-01-15 | 2004-07-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-07-16 | 2008-01-15 | 2008-07-16 | $7700.00 | Window Closed / Lapsed |