US5532183A
Expired / Lapsed
US
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Semiconductor device having heavily doped silicon film
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1994-12-12
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Granted: 1996-07-02
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Expires: 2014-12-12
Abstract
Abstract A method of manufacturing a semiconductor device including the steps of depositing a silicon film on an underlying layer while doping phosphorus to a concentration of 7×10 20 to 2×10 21 atoms/cm 3 , and thereafter heating the silicon film. A semiconductor device having a silicon film with a sufficiently low resistivity is provided.
Inventors
- 👤 Shigekazu Sugawara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:35
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
65 words
A method of manufacturing a semiconductor device comprising the steps of: depositing a film of amorphous silicon on an underlying layer from a gas stream containing a silane and a phosphine, said film being doped with phosphorus to a concentration of 7×10 20 to 2×10 21 atoms/cm 3 ; and then heating said film to convert the amorphous silicon in the film to polycrystalline silicon.
Claim 2
Independent Claim
65 words
A method of manufacturing a semiconductor device comprising the steps of: depositing a film of amorphous silicon on an underlying layer from a gas stream containing a silane and a phosphine, said film being doped with phosphorus to a concentration of 7×10 20 to 2×10 21 atoms/cm 3 ; and then heating said film to convert the amorphous silicon in the film to polycrystalline silicon.
Claim 3
Dependent Claim
23 words
A method according to claim 1, wherein said heating step includes a step of depositing an insulating film on said amorphous silicon film.
Claim 4
Dependent Claim
23 words
A method according to claim 1, wherein said heating step includes a step of depositing a silicide film on said amorphous silicon film.
Claim 5
Dependent Claim
26 words
A method according to claim 1, wherein said film of amorphous silicon is deposited by chemical vapor deposition from a gas stream containing disilane and phosphine.
Claim 6
Dependent Claim
38 words
A method according to claim 2, wherein said underlying layer is a gate oxide film formed on a silicon substrate, and the method further comprises the step of patterning said amorphous silicon film and forming a gate electrode.
Claim 7
Dependent Claim
42 words
A method according to claim 2, wherein said underlying layer is formed on a silicon substrate and has a laminated layer structure with an interlayer insulating film as the uppermost layer and a contact hole exposing the surface of the silicon substrate.
Claim 8
Dependent Claim
39 words
A method according to claim 6, further comprising the step of depositing a silicon film on said interlayer insulating film, said silicon film being doped with phosphorus to a concentration of 7×10 20 to 2×10 21 atoms/cm 3 .
Claim 9
Dependent Claim
42 words
A method according to claim 3, wherein said underlying layer is an interlayer insulating film formed over a semiconductor substrate, and the method further comprises the step of patterning said silicide film and said amorphous silicon film to form a wiring pattern.
Claim 10
Dependent Claim
32 words
A method according to claim 1, wherein said silicon film forms a polycrystalline or amorphous silicon electrode, and said phosphorus concentration is set to 7.0×10 20 to 1.0×10 21 atoms/cm 3 .
Claim 11
Dependent Claim
32 words
A method according to claim 1, wherein said silicon film forms a part of a polycide electrode, and said phosphorus concentration is set to 1.0×10 21 to 2.0×10 21 atoms/cm 3 .
Claim 12
Dependent Claim
34 words
A method according to claim 1, wherein said silicon film is used for a storage electrode of a capacitor, and said phosphorus concentration is set to 1.2×10 21 to 1.6×10 21 atoms/cm 3 .
Claim 13
Dependent Claim
34 words
A method according to claim 1, wherein said silicon film is used for an opposing electrode of a capacitor, and said phosphorus concentration is set to 7.0×10 20 to 1.2×10 21 atoms/cm 3 .
References Cited (Backward Citations)
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