Semiconductor memory device having presetting function of sense amplifier

Claim 2

A semiconductor memory device comprising: a memory cell array including a plurality of read-only memory cells; a digit line, connected to said memory cell array, said digit line receiving read data from a selected one of said read-only memory cells; a sense amplifier, connected to said digit line, for sensing a voltage at said digit line to generate a sense voltage signal; a presetting means, connected to said sense amplifier, for receiving an address transition detection signal to preset the sense voltage signal to a definite voltage; a reference circuit for generating a reference voltage signal; and a comparator, connected to said sense amplifier and said reference circuit, for comparing the sense voltage signal with the reference voltage signal to generate an output signal with the voltage of the reference voltage signal connected to the comparator being constant regardless of a presetting operation of said presetting means.

Claim 3

A device as set forth in claim 1, wherein said read-only memory cells are of a nonvolatile type.

Claim 4

A device as set forth in claim 1, wherein said read-only memory cells are of a mask ROM cell type.

Claim 5

A device as set forth in claim 1, wherein said sense amplifier comprises: a first switching element connected to a first power supply terminal and controlled by a read mode signal; a first load element connected between said first switching element and a first node; second and third switching elements connected in parallel between the first node and a second power supply terminal, said second switching element being controlled by the voltage at said digit line, said third switching element being controlled by the read mode signal; a second load element connected between the first power supply terminal and a second node; and a fourth switching element connected between the second node and said digit line, said fourth switching element being controlled by a voltage at said first node, said second node generating the sense voltage signal.

Claim 6

A semiconductor memory device comprising: a memory cell array including a plurality of read-only memory cells; a digit line, connected to said memory cell array, said digit line receiving read data from a selected one of said read-only memory cells; a sense amplifier, connected to said digit line, for sensing a voltage at said digit line to generate a sense voltage signal; a presetting means, connected to said sense amplifier, for receiving an address transition detection signal to preset the sense voltage signal to a definite voltage; a reference circuit for generating a reference voltage signal; and a comparator, connected to said sense amplifier and said reference circuit, for comparing the sense voltage signal with the reference voltage signal to generate an output signal, with the voltage of the reference voltage signal connected to the comparator being constant regardless of a presetting operation of said presetting means; the presetting means includes: (a) a constant voltage generating circuit for generating a constant voltage signal; and (b) a presetting circuit, connected to said constant voltage generating circuit, for presetting the sense voltage signal in accordance with the constant voltage signal, said presetting circuit being enabled by the address transition detection signal.

Claim 7

A semiconductor memory device comprising: a memory cell array including a plurality of read-only memory cells; a digit line, connected to said memory cell array, said digit line receiving read data from a selected one of said read-only memory cells; a sense amplifier, connected to said digit line, for sensing a voltage at said digit line to generate a sense voltage signal; a presetting means, connected to said sense amplifier, for receiving an address transition detection signal to preset the sense voltage signal to a definite voltage; a reference circuit for generating a reference voltage signal; and a comparator, connected to said sense amplifier and said reference circuit, for comparing the sense voltage signal with the reference voltage signal to generate an output signal, with the voltage of the reference voltage signal connected to the comparator being constant regardless of a presetting operation of said presetting means; the presetting means includes: (a) a constant voltage generating circuit for generating a constant voltage signal; and (b) a presetting circuit, connected to said constant voltage generating circuit, for presetting the sense voltage signal in accordance with the constant voltage signal, said presetting circuit being enabled by the address transition detection signal.

Claim 8

A device as set forth in claim 5, wherein said constant voltage generating circuit comprises at least two load elements connected in series between first and second power supply terminals.

Claim 9

A device as set forth in claim 6, wherein said constant voltage generating circuit further comprises a switching element connected in series to said at least two load elements and controlled by the read mode signal.

Claim 10

A device as set forth in claim 5, wherein said constant voltage generating circuit comprises a first power supply terminal.

Claim 11

A device as set forth in claim 5, wherein said presetting circuit comprises: a fifth switching element connected to a first power supply terminal and being controlled by the address transition detection signal; and a load element connected between said fifth switching element and said sense amplifier, said load element being controlled by the constant voltage signal of said constant voltage generating circuit.

Claim 12

A device as set forth in claim 9, wherein said presetting circuit further comprises a sixth switching element connected between said load element and a second power supply terminal.