US5530280A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for producing crackstops on semiconductor devices and devices containing the crackstops
Assignee: International Business Machines Corp
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Filing: 1995-03-31
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Granted: 1996-06-25
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Expires: 2015-03-31
Abstract
Abstract A process for making a crackstop on a semiconductor device is disclosed. The process involves creating and metallizing a groove surrounding the active region on a chip at the same time as other functional metallization is occurring, and then selectively etching out the metal in the groove after final passivation. In various embodiments the groove passes through the surface dielectric or the semiconductor substrate. In one embodiment the groove is replaced by hollow metal rings that can be stacked through multiple dielectric layers.
Inventors
- 👤 Eric J. White
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 08:08
CPC Classifications
H; H10; H10W; H10W42/00; H10W42/121
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
37 words
A semiconductor device comprising a semiconductor substrate and a plurality of dielectric layers thereon, said substrate including an active region and each of said dielectric layers containing a continuous hollow metal ring surrounding said substrate active region.
Claim 2
Dependent Claim
37 words
A semiconductor device comprising a semiconductor substrate and a plurality of dielectric layers thereon, said substrate including an active region and each of said dielectric layers containing a continuous hollow metal ring surrounding said substrate active region.
Claim 3
Dependent Claim
47 words
A device according to claim 1 wherein each of said hollow metal rings surrounding said active device region is composed of two metal compositions, a first metal composition forming a floor and walls of a cavity and a second metal composition forming a cap of said cavity.
Claim 4
Dependent Claim
22 words
A device according to claim 2 wherein said first metal composition is tungsten and said second metal composition is an aluminum alloy.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-06-25 | 1999-12-25 | 2000-06-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-06-25 | 2003-12-25 | 2004-06-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-06-25 | 2007-12-25 | 2008-06-25 | $7700.00 | Window Closed / Lapsed |