Patent US5529949A successfully refreshed from Google Patents.
US5529949A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process of making thin film 2H α-sic by laser ablation
Assignee: Kent State University
•
Filing: 1994-03-17
•
Granted: 1996-06-25
•
Expires: 2014-03-17
Abstract
Abstract Thin films of 2H alpha -silicon carbide are produced by pulsed laser ablation.
Inventors
- 👤 Mark A. Stan
- 👤 Martin O. Patton
- 👤 Joseph D. Warner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 14:21
CPC Classifications
C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/36; Y; Y10; Y10S; Y10S148/00; Y10S148/148; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
48 words
A process for producing a thin film of 2H α-silicon carbide, said process comprising contacting a substrate with a high energy plasma wherein said plasma is produced by pulsed laser ablation containing atoms of silicon and atoms of carbon, at least of some of those atoms being ionized.
Claim 2
Dependent Claim
48 words
A process for producing a thin film of 2H α-silicon carbide, said process comprising contacting a substrate with a high energy plasma wherein said plasma is produced by pulsed laser ablation containing atoms of silicon and atoms of carbon, at least of some of those atoms being ionized.
Claim 3
Dependent Claim
21 words
The process of claim 1 wherein said substrate is selected so that said 2H α-silicon carbide grows epitaxially on said substrate.
Claim 4
Dependent Claim
12 words
The process of claim 2 wherein said laser is a krypton/fluorine laser.
Claim 5
Dependent Claim
32 words
The process of claim 3 wherein said laser operates at a wavelength of approximately 248 nanometers, 2 pulses per second and provides an energy density of about 2.5 joules per square centimeter.
Claim 6
Dependent Claim
42 words
The process of claim 3 wherein said pulsed laser creates an energy density of about one-half to 10 joules per square centimeter per pulse, and further wherein the duration of the pulses of said pulse laser are about 15 to 30 nanoseconds.
Claim 7
Dependent Claim
22 words
The process of claim 1 wherein said substrate presents a deposition surface, said deposition surface comprising a plane of hexagonally arranged atoms.
Claim 8
Dependent Claim
17 words
The process of claim 6 wherein the lattice parameter of said basal plane is approximately 3.076 Å.
Claim 9
Dependent Claim
28 words
The process of claim 1 wherein deposition occurs at a pressure 10 -5 to 10 -10 Torr and a substrate holder temperature of 600° C. to 1800° C.
Claim 10
Dependent Claim
16 words
The process of claim 8 wherein molecular oxygen is present in the atmosphere of vapor deposition.
Claim 11
Dependent Claim
28 words
The process of claim 6 wherein said substrate presents a deposition surface whose atoms exhibit substantial registration with the atoms of the basal plane of 2H α-silicon carbide.
Claim 12
Dependent Claim
22 words
The process of claim 10 wherein said substrate is selected from the group consisting of α-silicon carbide, aluminum nitride and solutions thereof.
Claim 13
Dependent Claim
11 words
The process of claim 2 wherein said substrate is 6H SiC.
References Cited (Backward Citations)
US5080753A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-06-25 | 1999-12-25 | 2000-06-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-06-25 | 2003-12-25 | 2004-06-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-06-25 | 2007-12-25 | 2008-06-25 | $7700.00 | Window Closed / Lapsed |